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Publications:  Prosir Colin Humphreys

Niranjan S, Guiney I, Humphreys CJ, Sen P, Muralidharan R, Nath DN(2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics vol. 38, (3)
10.1116/1.5144509
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN(2020). A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Physica Status Solidi (A) Applications and Materials Science vol. 217, (7)
10.1002/pssa.201900794
Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D, Humphreys C(2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. Physical Review B: Condensed Matter and Materials Physics vol. 101, Article 125421,
10.1103/PhysRevB.101.125421
https://qmro.qmul.ac.uk/xmlui/handle/123456789/63442
Griffiths JT, Wisnivesky Rocca Rivarola F, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY et al.(2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. ACS Applied Energy Materials vol. 2, (10) 6998-7004.
10.1021/acsaem.8b02132
Zhou B, Das A, Kappers M, Oliver R, Humphreys C, Krause S(2019). InGaN as a substrate for AC photoelectrochemical imaging. Sensors
10.3390/s19204386
https://qmro.qmul.ac.uk/xmlui/handle/123456789/60714
Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ, Humphreys C(2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite?. Physical Review Letters vol. 123, 135501-135501.
10.1103/PhysRevLett.123.135501
https://qmro.qmul.ac.uk/xmlui/handle/123456789/59359
Tang F, Zhu T, Fu WY, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL et al.(2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates. Journal of Applied Physics vol. 125, (22)
10.1063/1.5097411
Massabuau FCP, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G et al.(2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics vol. 125, (16)
10.1063/1.5084330
Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA, Dawson P(2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. JAPANESE JOURNAL OF APPLIED PHYSICS vol. 58, Article ARTN SCCB09,
10.7567/1347-4065/ab0407
https://qmro.qmul.ac.uk/xmlui/handle/123456789/59093
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ, Dunstan DJ(2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B vol. 99, (4)
10.1103/PhysRevB.99.045402
https://qmro.qmul.ac.uk/xmlui/handle/123456789/55306
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R et al.(2019). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. IEEE Transactions on Electron Devices vol. 66, (1) 613-618.
10.1109/TED.2018.2882533
Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ, Humphreys CJ(2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. ACS Photonics vol. 5, (11) 4437-4446.
10.1021/acsphotonics.8b00904
Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA, Humphreys CJ(2018). What is red? on the chromaticity of orange-red InGaN/GaN based LEDs. Journal of Applied Physics vol. 124, (18)
10.1063/1.5047240
https://qmro.qmul.ac.uk/xmlui/handle/123456789/55307
Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA, Dawson P(2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B vol. 98, (15)
10.1103/PhysRevB.98.155301
https://qmro.qmul.ac.uk/xmlui/handle/123456789/49372
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R, Dawson P(2018). Effects of a Si-doped InGaN underlayer on the optical properties of InGaN/GaN quantum well structures with different numbers of quantum wells. Materials vol. 11, (9)
10.3390/ma11091736
https://qmro.qmul.ac.uk/xmlui/handle/123456789/54646
Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ, Wallis DJ(2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics vol. 124, (10)
10.1063/1.5046801
Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ et al.(2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics vol. 124, (5)
10.1063/1.5027680
Humphreys C, Waddington G(2018). Response to letter from Wayne Osborn. Astronomy and Geophysics vol. 59, (4)
https://qmro.qmul.ac.uk/xmlui/handle/123456789/49523
Cho SJ, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C, Thayne IG(2018). Impact of stress in ICP-CVD SiN<inf>x</inf> passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters vol. 54, (15) 947-949.
10.1049/el.2018.1097
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M et al.(2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics vol. 123, (18)
10.1063/1.5026267
Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P et al.(2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics vol. 123, (18)
10.1063/1.5027822
Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ, Dawson P(2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Journal of Physics Condensed Matter vol. 30, (17)
10.1088/1361-648X/aab818
Humphreys C, Waddington G(2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics vol. 59, (1)
https://qmro.qmul.ac.uk/xmlui/handle/123456789/54953
Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL et al.(2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics vol. 123, (2)
10.1063/1.5006255
Massabuau FC, Chen P, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ et al. (2018). Alloy fluctuations at dislocations in III-nitrides: Identification and impact on optical properties. Proceedings of SPIE - The International Society for Optical Engineering. vol. 10532,
10.1117/12.2288211
Kazemian P, Schönjahn C, Humphreys CJ(2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Microscopy of Semiconducting Materials 2003,
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA, Humphreys CJ(2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics vol. 122, (23)
10.1063/1.4986434
Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN(2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon with Carbon-Doped Buffer. IEEE Transactions on Electron Devices vol. 64, (12) 4868-4874.
10.1109/TED.2017.2757516
Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ et al.(2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics vol. 32, (11) 8743-8750.
10.1109/TPEL.2016.2643499
Humphreys C, Waddington G(2017). Solar eclipse of 1207 BC helps to date pharaohs. Astronomy and Geophysics vol. 58, (5) 5.39-5.42.
10.1093/astrogeo/atx178
Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ, Johnson PA(2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters vol. 44, (18) 9276-9282.
10.1002/2017GL074677
https://qmro.qmul.ac.uk/xmlui/handle/123456789/64992
Frentrup M, Lee LY, Sahonta SL, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ et al.(2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Journal of Physics D: Applied Physics vol. 50, (43)
10.1088/1361-6463/aa865e
Eblabla A, Benakaprasad B, Xu L, Wallis DJ, Guiney I, Humphreys C, Elgaid K (2017). Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Proceedings International Radar Symposium.
10.23919/IRS.2017.8008166
Massabuau FCP, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE et al.(2017). Dislocations in AlGaN: Core structure, atom segregation, and optical properties. Nano Letters vol. 17, (8) 4846-4852.
10.1021/acs.nanolett.7b01697
Floros K, Li X, Guiney I, Cho SJ, Hemakumara D, Wallis DJ, Wasige E, Moran DAJ et al. (2017). Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks. Physica Status Solidi (A) Applications and Materials Science. vol. 214,
10.1002/pssa.201600835
Massabuau F, Kappers M, Humphreys C, Oliver R (2017). Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth. Physica Status Solidi (B) Basic Research. vol. 254,
10.1002/pssb.201600666
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Sahonta SL, Frentrup M, Nilsson D, Ward PJ et al. (2017). Photoluminescence studies of cubic GaN epilayers. Physica Status Solidi (B) Basic Research. vol. 254,
10.1002/pssb.201600733
Massabuau F, Piot N, Frentrup M, Wang X, Avenas Q, Kappers M, Humphreys C, Oliver R (2017). X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface. Physica Status Solidi (B) Basic Research. vol. 254,
10.1002/pssb.201600664
Rouet-Leduc B, Hulbert C, Barros K, Lookman T, Humphreys CJ(2017). Automatized convergence of optoelectronic simulations using active machine learning. Applied Physics Letters vol. 111, (4)
10.1063/1.4996233
Xiu H, Thrush EJ, Zhao L, Phillips A, Humphreys CJ (2017). Degradation of InGaN/GaN laser diodes investigated by cross-sectional electron beam induced current imaging. 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017. vol. 2018-January, 38-44.
10.1109/IFWS.2017.8245970
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL et al.(2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Ultramicroscopy vol. 176, 93-98.
10.1016/j.ultramic.2017.01.019
Griffiths JT, Ren CX, Coulon PM, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I et al.(2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Applied Physics Letters vol. 110, (17)
10.1063/1.4982594
Coulon PM, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ et al.(2017). Evolution of the m-Plane quantum well morphology and composition within a GaN/InGaN core-shell structure. Crystal Growth and Design vol. 17, (2) 474-482.
10.1021/acs.cgd.6b01281
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ et al.(2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth vol. 459, 185-188.
10.1016/j.jcrysgro.2016.12.025
Kim JY, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke NJ et al.(2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Journal of Applied Physics vol. 121, (4)
10.1063/1.4973956
Massabuau FCP, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ et al.(2017). Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics vol. 121, (1)
10.1063/1.4973278
Smeeton T, Humphreys C(2017). Perspectives on electronic and photonic materials. Springer Handbooks,
Humphreys CJ (2017). Preventing cracking in the growth of low-cost GaN LEDs on large-area Si. ICF 2017 - 14th International Conference on Fracture. vol. 2, 1280-1282.
Guiney I, Thomas S, Humphreys CJ (2017). Single-step manufacturing process for the production of graphene-V/III LED heterostructures. Proceedings of SPIE - The International Society for Optical Engineering. vol. 10124,
10.1117/12.2250166
Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT(2016). Growth of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1−x</inf>N layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth vol. 456, 151-154.
10.1016/j.jcrysgro.2016.07.038
Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ et al.(2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters vol. 109, (23)
10.1063/1.4971366
Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ et al.(2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications vol. 247, 68-71.
10.1016/j.ssc.2016.08.017
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. (2016). Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. vol. 2016-November,
10.1109/IRMMW-THz.2016.7758723
Benakaprasad B, Eblabla A, Li X, Thayne I, Wallis DJ, Guiney I, Humphreys C, Elgaid K (2016). Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. vol. 2016-November,
10.1109/IRMMW-THz.2016.7758488
Schulz S, Tanner DSP, O'Reilly EP, Caro MA, Tang F, Griffiths JT, Oehler F, Kappers MJ et al.(2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m -plane InGaN/GaN quantum wells. Applied Physics Letters vol. 109, (22)
10.1063/1.4968591
Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ et al.(2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater vol. 17, (1) 736-743.
10.1080/14686996.2016.1244474
https://qmro.qmul.ac.uk/xmlui/handle/123456789/49527
Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D et al.(2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics vol. 120, (16)
10.1063/1.4965989
Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M, Lee KB, Zaidi Z et al. (2016). Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. IEEE International Reliability Physics Symposium Proceedings. vol. 2016-September, 4A41-4A45.
10.1109/IRPS.2016.7574529
Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ et al.(2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Journal of Applied Physics vol. 120, (8)
10.1063/1.4961417
Muhammed MM, Roldan MA, Yamashita Y, Sahonta SL, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ et al.(2016). High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga<inf>2</inf>O<inf>3</inf> using a GaN buffer layer. Scientific Reports vol. 6,
10.1038/srep29747
https://qmro.qmul.ac.uk/xmlui/handle/123456789/49528
Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D et al.(2016). Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology vol. 31, (8)
10.1088/0268-1242/31/8/085007
Presa S, Maaskant PP, Kappers MJ, Humphreys CJ, Corbett B(2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. AIP Advances vol. 6, (7)
10.1063/1.4959100
Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ, Oliver RA(2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters vol. 108, (25)
10.1063/1.4954236
Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al.(2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Applied Physics Letters vol. 108, (21)
10.1063/1.4948582
Dawson P, Schulz S, Oliver RA, Kappers MJ, Humphreys CJ(2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics vol. 119, (18)
10.1063/1.4948237
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S et al.(2016). Characterization of p-GaN<inf>1-x</inf>As<inf>x</inf>/n-GaN PN junction diodes. Semiconductor Science and Technology vol. 31, (6)
10.1088/0268-1242/31/6/065020
Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C et al.(2016). The microstructure of non-polar a-plane (11 2 0) InGaN quantum wells. Journal of Applied Physics vol. 119, (17)
10.1063/1.4948299
Pristovsek M, Humphreys CJ, Bauer S, Knab M, Thonke K, Kozlowski G, O'Mahony D, Maaskant P et al. (2016). Comparative study of (0001) and (11-22) InGaN based light emitting diodes. Japanese Journal of Applied Physics. vol. 55,
10.7567/JJAP.55.05FJ10
Hammersley S, Kappers MJ, Massabuau FCP, Sahonta SL, Dawson P, Oliver RA, Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 13, 209-213.
10.1002/pssc.201510187
Hammersley S, Dawson P, Kappers MJ, Massabuau FCP, Frentrup M, Oliver RA, Humphreys CJ (2016). Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 13, 262-265.
10.1002/pssc.201510188
Dunn A, Spencer BF, Hardman SJO, Graham DM, Hammersley S, Davies MJ, Dawson P, Kappers MJ et al. (2016). Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 13, 252-255.
10.1002/pssc.201510193
Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT (2016). Molecular beam epitaxy of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers using a highly efficient RF plasma source. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 13, 217-220.
10.1002/pssc.201510166
Christian GM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Massabuau FCP, Oliver RA, Humphreys CJ (2016). Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 13, 248-251.
10.1002/pssc.201510180
Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S et al.(2016). Subthreshold mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices vol. 63, (5) 1861-1865.
10.1109/TED.2016.2542588
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C(2016). Toward defect-free semi-polar GaN templates on pre-structured sapphire. Physica Status Solidi (B) Basic Research vol. 253, (5) 834-839.
10.1002/pssb.201552636
Rouet-Leduc B, Barros K, Lookman T, Humphreys CJ(2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Scientific Reports vol. 6,
10.1038/srep24862
https://qmro.qmul.ac.uk/xmlui/handle/123456789/49530
Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F et al.(2016). Influence of trench period and depth on MOVPE grown (1122) GaN on patterned r-plane sapphire substrates. Journal of Crystal Growth vol. 440, 69-75.
10.1016/j.jcrysgro.2016.01.014
Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon PM, Cherns D, Martin RW et al.(2016). Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods. Crystal Growth and Design vol. 16, (4) 1907-1916.
10.1021/acs.cgd.5b01438
Rhode SL, Horton MK, Sahonta SL, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ et al.(2016). Dislocation core structures in (0001) InGaN. Journal of Applied Physics vol. 119, (10)
10.1063/1.4942847
Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D et al.(2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al<inf>2</inf>O<inf>3</inf> gate dielectrics. Applied Physics Letters vol. 108, (7)
10.1063/1.4942093
Davies MJ, Hammersley S, Massabuau FCP, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ(2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics vol. 119, (5)
10.1063/1.4941321
Han Y, Zhu D, Zhu T, Humphreys CJ, Wallis DJ(2016). Origins of hillock defects on GaN templates grown on Si(111). Journal of Crystal Growth vol. 434, 123-127.
10.1016/j.jcrysgro.2015.11.005
Corbett B, Quan Z, Dinh DV, Kozlowski G, O'Mahony D, Akhter M, Schulz S, Parbrook P et al. (2016). Development of semipolar (11-22) LEDs on GaN templates. Proceedings of SPIE - The International Society for Optical Engineering. vol. 9768,
10.1117/12.2204758
Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K, Scholz F(2016). Growth and coalescence studies of (1122) oriented GaN on pre-structured sapphire substrates using marker layers. Physica Status Solidi (B) Basic Research vol. 253, (1) 46-53.
10.1002/pssb.201552266
Gîrgel I, Edwards PR, Le Boulbar E, Coulon PM, Sahonta SL, Allsopp DWE, Martin RW, Humphreys CJ et al. (2016). Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core-shell light-emitting diodes. Journal of Nanophotonics. vol. 10,
10.1117/1.JNP.10.016010
Miaja PF, Jiang S, Lee KB, Guiney I, Wallis DJ, Humphreys CJ, Houston PA, Forsyth AJ (2016). Modelling the closely-coupled cascode switching process. ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings.
10.1109/ECCE.2016.7855268
Kakanakova-Georgieva A, Sahonta SL, Nilsson D, Trinh XT, Son NT, Janzén E, Humphreys CJ(2016). N-Type conductivity bound by the growth temperature: The case of Al<inf>0.72</inf>Ga<inf>0.28</inf>N highly doped by silicon. Journal of Materials Chemistry C vol. 4, (35) 8291-8296.
10.1039/c6tc02825j
Pristovsek M, Frentrup M, Han Y, Humphreys CJ(2016). Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire. Physica Status Solidi (B) Basic Research vol. 253, (1) 61-66.
10.1002/pssb.201552263
Zhu D, Humphreys CJ(2016). Solid-state lighting based on light emitting diode technology. Optics in Our Time,
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Phillips WA, Thrush EJ, Zhang Y, Humphreys CJ (2012). Studies of efficiency droop in GaN based LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 9, 765-769.
10.1002/pssc.201100458
Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA, Humphreys CJ(2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Journal of Applied Physics vol. 111, (4)
10.1063/1.3678631
Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ, Humphreys CJ(2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films vol. 520, (7) 3064-3070.
10.1016/j.tsf.2011.11.020
Radtke G, Couillard M, Botton GA, Zhu D, Humphreys CJ(2012). Structure and chemistry of the Si(111)/AlN interface. Applied Physics Letters vol. 100, (1)
10.1063/1.3674984
Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P, Humphreys CJ(2012). Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphire. Physica Status Solidi (B) Basic Research vol. 249, (3) 494-497.
10.1002/pssb.201100479
Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ, Moram MA(2012). Growth, microstructure and morphology of epitaxial ScGaN films. Physica Status Solidi (A) Applications and Materials Science vol. 209, (1) 33-40.
10.1002/pssa.201100158
Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M et al.(2012). High-efficiency InGaN/GaN quantum well structures on large area silicon substrates. Physica Status Solidi (A) Applications and Materials Science vol. 209, (1) 13-16.
10.1002/pssa.201100129
Humphreys C (2012). Low-cost high-efficiency GaN LEDs on 6-inch Si. Optics InfoBase Conference Papers.
Badcock TJ, Kappers MJ, Moram MA, Dawson P, Humphreys CJ(2012). Modification of carrier localization in basal-plane stacking faults: The effect of Si-doping in a-plane GaN. Physica Status Solidi (B) Basic Research vol. 249, (3) 498-502.
10.1002/pssb.201100480
Hao R, Kappers MJ, Moram MA, Humphreys CJ(2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Journal of Crystal Growth vol. 337, (1) 81-86.
10.1016/j.jcrysgro.2011.10.004
Moram MA, Kappers MJ, Massabuau F, Oliver RA, Humphreys CJ(2011). Response to Comment on the effects of Si doping on dislocation movement and tensile stress in GaN films' [J. Appl. Phys. 109, 073509 (2011)]. Journal of Applied Physics vol. 110, (9)
10.1063/1.3656431
Zhang Y, Fu WY, Humphreys C, Lieten R(2011). Structural characterisation of improved GaN epilayers grown on a Ge(111) substrate. Applied Physics Express vol. 4, (9)
10.1143/APEX.4.091001
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Humphreys CJ(2011). The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates. Japanese Journal of Applied Physics vol. 50, (8 PART 1)
10.1143/JJAP.50.080201
Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GDW, Oliver RA(2011). Atom probe tomography assessment of the impact of electron beam exposure on In<inf>x</inf>Ga<inf>1-x</inf>N/GaN quantum wells. Applied Physics Letters vol. 99, (2)
10.1063/1.3610468
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ, Humphreys CJ (2011). Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r-plane sapphire. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 8, 2179-2181.
10.1002/pssc.201001043
Hammersley S, Badcock TJ, Watson-Parris D, Godfrey MJ, Dawson P, Kappers MJ, Humphreys CJ (2011). Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 8, 2194-2196.
10.1002/pssc.201001001
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ, Humphreys CJ(2011). The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates. Physica Status Solidi (A) Applications and Materials Science vol. 208, (7) 1529-1531.
10.1002/pssa.201001007
Fu WY, Kappers MJ, Zhang Y, Humphreys CJ, Moram MA(2011). Dislocation climb in c-plane ALN films. Applied Physics Express vol. 4, (6)
10.1143/APEX.4.065503
Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH, Humphreys CJ(2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. Physical Review B - Condensed Matter and Materials Physics vol. 83, (16)
10.1103/PhysRevB.83.165122
https://qmro.qmul.ac.uk/xmlui/handle/123456789/49529
Moram MA, Kappers MJ, Massabuau F, Oliver RA, Humphreys CJ(2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Journal of Applied Physics vol. 109, (7)
10.1063/1.3553841
Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ, Humphreys CJ(2011). Carrier localization mechanisms in In<inf>x</inf>Ga<inf>1-x</inf>N/GaN quantum wells. Physical Review B - Condensed Matter and Materials Physics vol. 83, (11)
10.1103/PhysRevB.83.115321
Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA(2011). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Ultramicroscopy vol. 111, (3) 207-211.
10.1016/j.ultramic.2010.11.028
Chee AKW, Broom RF, Humphreys CJ, Bosch EGT(2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Journal of Applied Physics vol. 109, (1)
10.1063/1.3524186
Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ et al. (2011). Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope. Journal of Physics: Conference Series. vol. 326,
10.1088/1742-6596/326/1/012028
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P et al.(2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Journal of Applied Physics vol. 109, (1)
10.1063/1.3530602
Petrov M, Holec D, Lymperakis L, Neugebauer J, Humphreys CJ (2011). Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite A1N and Al<inf>x</inf>Ga<inf>1-x</inf>N. Journal of Physics: Conference Series. vol. 326,
10.1088/1742-6596/326/1/012016
Humphreys CJ(2011). The Mystery of the last supper: Reconstructing the final days of Jesus.
Moram MA, Sadler TC, Häberlen M, Kappers MJ, Humphreys CJ(2010). Dislocation movement in GaN films. Applied Physics Letters vol. 97, (26)
10.1063/1.3532965
Radtke G, Couillard M, Botton GA, Zhu D, Humphreys CJ(2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Applied Physics Letters vol. 97, (25)
10.1063/1.3527928
Chang TY, Moram MA, McAleese C, Kappers MJ, Humphreys CJ(2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Journal of Applied Physics vol. 108, (12)
10.1063/1.3525622
Hao R, Zhu T, Hberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ, Moram MA(2010). The effects of annealing on non-polar (1 1 2̄ 0) a-plane GaN films. Journal of Crystal Growth vol. 312, (23) 3536-3543.
10.1016/j.jcrysgro.2010.08.041
Kurniawan O, Tan CC, Ong VKS, Li E, Humphreys CJ(2010). A direct method for charge collection probability computation using the reciprocity theorem. IEEE Transactions on Electron Devices vol. 57, (10) 2455-2461.
10.1109/TED.2010.2056291
Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ, O'Reilly EP(2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. Physical Review B - Condensed Matter and Materials Physics vol. 82, (12)
10.1103/PhysRevB.82.125318
Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A, Humphreys CJ(2010). Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics vol. 43, (35)
10.1088/0022-3727/43/35/354003
Badcock TJ, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P (2010). Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 1894-1896.
10.1002/pssc.200983574
Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O'Reilly EP, Humphreys CJ (2010). Characterising the degree of polarisation anisotropy in an a-plane GaN film. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 1897-1899.
10.1002/pssc.200983575
Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ, Oliver RA (2010). Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a-plane GaN. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 2088-2090.
10.1002/pssc.200983573
Watson-Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ, Humphreys CJ (2010). Energy landscape and carrier wave-functions in InGaN/GaN quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 2255-2258.
10.1002/pssc.200983516
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P et al. (2010). InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 2168-2170.
10.1002/pssc.200983522
Collins DP, Holmes MJ, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ (2010). Q-factor measurements on planar nitride cavities. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 1866-1868.
10.1002/pssc.200983474
Rodenburg C, Jepson MAE, Inkson BJ, Bosch EGT, Humphreys CJ (2010). Energy filtered scanning electron microscopy: Applications to characterisation of semiconductors. Journal of Physics: Conference Series. vol. 241,
10.1088/1742-6596/241/1/012074
Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA(2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics vol. 108, (3)
10.1063/1.3460641
Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M, Spence JCH(2010). Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. Acta Crystallographica Section A: Foundations of Crystallography vol. 66, (4) 446-450.
10.1107/S0108767310008664
Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. Physica Status Solidi (B) Basic Research. vol. 247, 1753-1756.
10.1002/pssb.200983537
Bennett SE, Holec D, Kappers MJ, Humphreys CJ, Oliver RA(2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Review of Scientific Instruments vol. 81, (6)
10.1063/1.3430539
Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ, Humphreys CJ(2010). Cavity Enhancement of single quantum dot emission in the blue. Nanoscale Research Letters vol. 5, (3) 608-612.
10.1007/s11671-009-9514-4
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ(2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Journal of Physics D: Applied Physics vol. 43, (5)
10.1088/0022-3727/43/5/055303
Ashraf H, Sridhara Rao DV, Gogova D, Siche D, Fornari R, Humphreys CJ, Hageman PR(2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiN<inf>x</inf> treatment. Journal of Crystal Growth vol. 312, (4) 595-600.
10.1016/j.jcrysgro.2009.11.043
Kappers MJ, Moram MA, Sridhara Rao DV, McAleese C, Humphreys CJ(2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire. Journal of Crystal Growth vol. 312, (3) 363-367.
10.1016/j.jcrysgro.2009.11.014
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA (2010). Atom probe extended to AlGaN: Three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 1781-1783.
10.1002/pssc.200983510
Liu LZY, Sridhara Rao DV, Kappers MJ, Humphreys CJ, Geiger D (2010). Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012012
Haeberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN <inf>x</inf> and AlGaN layers. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012017
Rodenburg C, Jepson MAE, Inkson BJ, Bosch E, Chee AKW, Humphreys CJ (2010). Energy filtered scanning electron microscopy: applications to dopant contrast. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS. vol. 209,
10.1088/1742-6596/209/1/012053
Rao DVS, Beanland R, Kappers MJ, Zhu D, Humphreys CJ (2010). Lattice distortions in GaN thin films on (0001) sapphire. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS. vol. 209,
10.1088/1742-6596/209/1/012022
Moram MA, Kappers MJ, Humphreys CJ (2010). Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 7, 1778-1780.
10.1002/pssc.200983494
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA (2010). Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012014
Chee KWA, Bosch EGT, Humphreys CJ (2010). Progress towards quantitative dopant profiling in the SEM. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012054
Jepson MAE, Inkson BJ, Beanland R, Chee AKW, Humphreys CJ, Rodenburg C (2010). Progress towards site-specific dopant profiling in the scanning electron microscope. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012068
Oliver RA, Bennett SE, Sumner J, Kappers MJ, Humphreys CJ (2010). Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012049
Chee KWA, Beanland R, Midgley PA, Humphreys CJ (2010). Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012069
Barnard JS, Bennett SE, Oliver RA, Kappers MJ, Humphreys CJ (2010). The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials. Journal of Physics: Conference Series. vol. 209,
10.1088/1742-6596/209/1/012019
Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ, Humphreys CJ(2009). Structural properties of wurtzitelike ScGaN films grown by NH <inf>3</inf>-molecular beam epitaxy. Journal of Applied Physics vol. 106, (11)
10.1063/1.3268466
Sumner J, Oliver RA, Kappers MJ, Humphreys CJ(2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Journal of Applied Physics vol. 106, (10)
10.1063/1.3259379
Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ, Humphreys CJ(2009). On the origin of threading dislocations in GaN films. Journal of Applied Physics vol. 106, (7)
10.1063/1.3225920
Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ, Corbett B(2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Applied Physics Letters vol. 95, (15)
10.1063/1.3244203
Moram MA, Oliver RA, Kappers MJ, Humphreys CJ(2009). The spatial distribution of threading dislocations in gallium nitride films. Advanced Materials vol. 21, (38-39) 3941-3944.
10.1002/adma.200901095
Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A (2009). Non-linear excitation and correlation studies of single InGaN quantum dots. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 6, 864-867.
10.1002/pssc.200880632
Oliver RA, Sumner J, Kappers MJ, Humphreys CJ(2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Journal of Applied Physics vol. 106, (5)
10.1063/1.3212971
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ(2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D: Applied Physics vol. 42, (13)
10.1088/0022-3727/42/13/135407
Sridhara Rao DV, McLaughlin K, Kappers MJ, Humphreys CJ(2009). Lattice distortions in GaN on sapphire using the CBED-HOLZ technique. Ultramicroscopy vol. 109, (10) 1250-1255.
10.1016/j.ultramic.2009.05.018
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ(2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Physica B: Condensed Matter vol. 404, (16) 2189-2191.
10.1016/j.physb.2009.04.010
Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA et al.(2009). Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Journal of Applied Physics vol. 106, (1)
10.1063/1.3160312
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Sridhara Rao DV, Sanchez AM et al.(2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Journal of Applied Physics vol. 105, (12)
10.1063/1.3156688
Moram MA, Johnston CF, Hollander JL, Kappers MJ, Humphreys CJ(2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics vol. 105, (11)
10.1063/1.3129307
Bennett SE, Oliver RA, Saxey DW, Cerezo A, Clifton PH, Ulfig R, Kappers MJ, Humphreys CJ (2009). Atom probe tomography studies of gan-based semiconductor materials. Microscopy and Microanalysis. vol. 15, 280-281.
10.1017/S1431927609097979
Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C, Humphreys CJ (2009). Optical and microstructural properties of semi-polar (11-22) InGaN/GaN quantum well structures. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 6,
10.1002/pssc.200880840
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Sridhara Rao DV, Sanchez AM et al. (2009). Optical polarisation anisotropy in a -plane GaN/AlGaN multiple quantum well structures. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 6,
10.1002/pssc.200880796
Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C, Tahraoui A(2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Nanotechnology vol. 20, (24)
10.1088/0957-4484/20/24/245702
Johnston CF, Kappers MJ, Moram MA, Hollander JL, Humphreys CJ(2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Journal of Crystal Growth vol. 311, (12) 3295-3299.
10.1016/j.jcrysgro.2009.03.044
Johnston CF, Kappers MJ, Moram MA, Hollander JL, Humphreys CJ (2009). Defect reduction in non-polar (112̄0) GaN grown on (11̄02) sapphire. Physica Status Solidi (A) Applications and Materials Science. vol. 206, 1190-1193.
10.1002/pssa.200880788
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ(2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth vol. 311, (12) 3239-3242.
10.1016/j.jcrysgro.2009.03.029
Holec D, Sridhara Rao DV, Humphreys CJ(2009). HANSIS software tool for the automated analysis of HOLZ lines. Ultramicroscopy vol. 109, (7) 837-844.
10.1016/j.ultramic.2009.03.026
Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H et al. (2009). Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy. Physica Status Solidi (A) Applications and Materials Science. vol. 206, 1205-1210.
10.1002/pssa.200880842
Johnston CF, Moram MA, Kappers MJ, Humphreys CJ(2009). Defect reduction in (11 2- 2) semipolar GaN grown on m -plane sapphire using ScN interlayers. Applied Physics Letters vol. 94, (16)
10.1063/1.3119321
Johnston CF, Kappers MJ, Humphreys CJ(2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Journal of Applied Physics vol. 105, (7)
10.1063/1.3103305
Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianua CO, Thrush EJ, Kappers MJ, Phillips WA et al. (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. Proceedings of SPIE - The International Society for Optical Engineering. vol. 7231,
10.1117/12.814919
Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ, Campion RP(2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth vol. 311, (7) 2054-2057.
10.1016/j.jcrysgro.2008.11.084
Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA, Humphreys CJ(2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters vol. 94, (1)
10.1063/1.3056653
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A(2008). Electrically driven single InGaN/GaN quantum dot emission. Applied Physics Letters vol. 93, (23)
10.1063/1.3044395
Sumner J, Oliver RA, Kappers MJ, Humphreys CJ (2008). Assessment of scanning spreading resistance microscopy for application to n-type GaN. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 5, 1652-1654.
10.1002/pssc.200778569
Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J, Humphreys CJ (2008). Degradation of III-nitride laser diodes grown by molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 5, 2204-2206.
10.1002/pssc.200778546
Dawson P, Hylton NP, Kappers MJ, McAleese C, Humphreys CJ (2008). Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 5, 2270-2273.
10.1002/pssc.200778682
Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C, Humphreys CJ(2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Journal of Applied Physics vol. 104, (12)
10.1063/1.3033553
Oliver RA, Kappers MJ, Humphreys CJ (2008). Gross well-width fluctuations in InGaN quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 5, 1475-1481.
10.1002/pssc.200778557
Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ, Humphreys CJ (2008). High brightness near-ultraviolet resonant LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 5, 2056-2058.
10.1002/pssc.200778405
Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C, Humphreys CJ (2008). High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN. Physica Status Solidi (C) Current Topics in Solid State Physics. vol. 5, 1482-1484.
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Cherns PD, McAleese C, Barnard JS, Kappers MJ, Humphreys CJ (2006). A TEM investigation of crack reduction in AlGaN/GaN heterostructures using an AlN interlayer. Materials Research Society Symposium Proceedings. vol. 892, 697-702.
Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ (2006). Microstructure and strain-free lattice parameters of Sc<inf>x</inf>Ga <inf>1-x</inf>N films. Materials Research Society Symposium Proceedings. vol. 892, 723-727.
Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ (2006). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. Materials Research Society Symposium Proceedings. vol. 892, 639-643.
Van Der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ (2006). Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wells. Materials Research Society Symposium Proceedings. vol. 892, 831-836.
Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ (2006). SiH<inf>4</inf> exposure of GaN surfaces: A useful tool for highlighting dislocations. Materials Research Society Symposium Proceedings. vol. 892, 631-636.
Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ, Humphreys CJ (2006). The mean inner potential of GaN measured from nanowires using off-axis electron holography. Materials Research Society Symposium Proceedings. vol. 892, 209-214.
Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P et al.(2006). A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. Physica Status Solidi (A) Applications and Materials Science vol. 203, (7) 1819-1823.
10.1002/pssa.200565250
Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ, Graham DM, Dawson P, Godfrey MJ et al. (2006). Misfit dislocations in In-rich InGaN/GaN quantum well structures. Physica Status Solidi (A) Applications and Materials Science. vol. 203, 1729-1732.
10.1002/pssa.200565219
Charles MB, Zhang Y, Kappers MJ, Humphreys CJ (2006). Progress in MOVPE growth of crack-free AlGaN based Bragg reflectors on Si(111). Physica Status Solidi (A) Applications and Materials Science. vol. 203, 1618-1621.
10.1002/pssa.200565348
Smeeton TM, Humphreys CJ, Barnard JS, Kappers MJ (2006). The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy. Journal of Materials Science. vol. 41, 2729-2737.
10.1007/s10853-006-7876-x
Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Andrew G, Kappers MJ, Humphreys CJ et al.(2006). Two-photon absorption from single InGaN/GaN quantum dots. Physica E: Low-Dimensional Systems and Nanostructures vol. 32, (1-2 SPEC. ISS.) 119-122.
10.1016/j.physe.2005.12.022
Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ(2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH<inf>4</inf> and NH<inf>3</inf>. Journal of Crystal Growth vol. 289, (2) 506-514.
10.1016/j.jcrysgro.2005.12.075
Kenyon AJ, Chryssou CE, Smeeton TM, Humphreys CJ, Hole DE (2006). Sensitisation of erbium luminescence in erbium-implanted alumina. Optical Materials. vol. 28, 655-659.
10.1016/j.optmat.2005.09.052
Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ (2006). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. GAN, AIN, INN AND RELATED MATERIALS. vol. 892, 631-+.
Charles MB, Kappers MJ, Humphreys CJ (2005). The effect of AlGaN and SiN interlayers on GaN/Si(111). Physica Status Solidi C: Conferences. vol. 2, 956-959.
10.1002/pssc.200460601
Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ, Humphreys CJ(2005). Determination of relative internal quantum efficiency in InGaNGaN quantum wells. Journal of Applied Physics vol. 98, (5)
10.1063/1.2033144
Charles MB, Kappers MJ, Humphreys CJ (2005). Growth of uncracked Al<inf>0.80</inf>Ga<inf>0.20</inf>/GaN DBR on Si(111). Materials Research Society Symposium Proceedings. vol. 831, 155-159.
Datta R, Kappers MJ, Barnard JS, Humphreys CJ (2005). Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE. Materials Research Society Symposium Proceedings. vol. 831, 405-410.
Taylor RA, Robinson JW, Rice JH, Lee KH, Jarjour A, Na JH, Yasin S, Oliver RA et al. (2005). Time-resolved dynamics in single InGaN quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. vol. 5725, 296-308.
10.1117/12.583431
Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ et al.(2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Applied Physics Letters vol. 86, (21) 1-3.
10.1063/1.1935044
Vickers ME, Kappers MJ, Datta R, McAleese C, Smeeton TM, Rayment FDG, Humphreys CJ (2005). In-plane imperfections in GaN studied by x-ray diffraction. Journal of Physics D: Applied Physics. vol. 38,
10.1088/0022-3727/38/10A/019
Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ et al.(2005). Optical and microstructural studies of InGaNGaN single-quantum-well structures. Journal of Applied Physics vol. 97, (10)
10.1063/1.1897070
Ofori AP, Rossouw CJ, Humphreys CJ(2005). Determining the site occupancy of Ru in the L1<inf>2</inf> phase of a Ni-base superalloy using ALCHEMI. Acta Materialia vol. 53, (1) 97-110.
10.1016/j.actamat.2004.09.007
Cherns PD, McAleese C, Kappers MJ, Humphreys CJ (2005). A TEM study of AlN interlayer defects in AlGaN/GaN heterostructures. Microscopy of Semiconducting Materials. vol. 107, 55-58.
Oliver RA, van der Laak NK, Kappers MJ, Humphreys CJ (2005). Evolution of InGaN/GaN nanostructures and wetting layers during annealing. Microscopy of Semiconducting Materials. vol. 107, 29-32.
Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD(2005). Growth modes in heteroepitaxy of InGaN on GaN. Journal of Applied Physics vol. 97, (1)
10.1063/1.1823581
Barnard JS, Graham DM, Smeeton TM, Kappers MJ, Dawson P, Godfrey M, Humphreys CJ (2005). InGaN-GaN quantum wells: their luminescent and nano-structural properties. MICROSCOPY OF SEMICONDUCTING MATERIALS. vol. 107, 25-28.
Datta R, Kappers MJ, Barnard JS, Humphreys CJ (2005). Reduction of threading dislocation density using in-situ SiNx interlayers. Microscopy of Semiconducting Materials. vol. 107, 59-62.
Wong ASW, Ho GW, Costa PMFJ, Oliver RA, Humphreys CJ (2005). Self-catalytic growth of gallium nitride nanoneedles under Ga-rich conditions. Microscopy of Semiconducting Materials. vol. 107, 287-290.
van der Laak NK, Oliver RA, Kappers MJ, McAleese C, Humphreys CJ (2005). Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes. Microscopy of Semiconducting Materials. vol. 107, 13-16.
McAleese C, Kappers MJ, Rayment FDG, Cherns P, Humphreys CJ (2004). Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN. Journal of Crystal Growth. vol. 272, 475-480.
10.1016/j.jcrysgro.2004.08.116
Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD (2004). The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy. Journal of Crystal Growth. vol. 272, 393-399.
10.1016/j.jcrysgro.2004.08.072
Ofori AP, Humphreys CJ, Tin S, Jones CN (2004). A tem study of the effect of platinum group metals in advanced single crystal nickel-base superalloys. Proceedings of the International Symposium on Superalloys. 787-794.
Hobbs RA, Tin S, Rae CMF, Broomfield RW, Humphreys CJ (2004). Solidification characteristics of advanced nickel-base single crystal superalloys. Proceedings of the International Symposium on Superalloys. 819-825.
Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ, Hole DE(2004). Broadband sensitization of 1.53 μm Er<sup>3+</sup> luminescence in erbium-implanted alumina. Applied Physics Letters vol. 85, (22) 5200-5202.
10.1063/1.1829139
Barnard JS, Vickers ME, Kappers MJ, Thrush EJ, Humphreys CJ (2004). A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM. Design and Nature. vol. 6, 57-60.
Makaronidis G, McAleese C, Barnard JS, Humphreys CJ (2004). Effects of AlN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD. Design and Nature. vol. 6, 309-312.
Barnard JS, Kappers MJ, Thrush EJ, Humphreys CJ (2004). Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM. Design and Nature. vol. 6, 281-284.
Kazemian P, Schönjahn C, Humphreys CJ (2004). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Design and Nature. vol. 6, 593-596.
Yan J, Kappers MJ, Crossley A, McAleese C, Phillips WA, Humphreys CJ (2004). Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN. Physica Status Solidi C: Conferences. vol. 1, 2820-2824.
10.1002/pssb.200405056
Datta R, Kappers MJ, Barnard JS, Humphreys CJ(2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Applied Physics Letters vol. 85, (16) 3411-3413.
10.1063/1.1807962
Datta R, Kappers MJ, Vickers ME, Barnard JS, Humphreys CJ (2004). Growth and characterisation of GaN with reduced dislocation density. Superlattices and Microstructures. vol. 36, 393-401.
10.1016/j.spmi.2004.09.003
Chen GS, Chen GS, Hsiao HH, Louh RF, Humphreys CJ(2004). Improving thermal stability of LiMn<inf>2</inf>O<inf>4</inf> thin films by in situ coating of α-MnO<inf>2</inf> using high-pressure and high-temperature sputtering. Electrochemical and Solid-State Letters vol. 7, (8)
10.1149/1.1758931
Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al.(2004). Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots. IEEE Transactions on Nanotechnology vol. 3, (3) 343-347.
10.1109/TNANO.2004.828567
Yan J, Kappers MJ, Barber ZH, Humphreys CJ (2004). Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN. Applied Surface Science. vol. 234, 328-332.
10.1016/j.apsusc.2004.05.066
Kazemian P, Rodenburg C, Humphreys CJ (2004). Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM. MICROELECTRONIC ENGINEERING. vol. 73-4, 948-953.
10.1016/j.mee.2004.03.080
Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Andrew G, Briggs D, Kappers MJ et al.(2004). Temporal variation in photoluminescence from single InGaN quantum dots. Applied Physics Letters vol. 84, (20) 4110-4112.
10.1063/1.1753653
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. (2004). Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots. Physica Status Solidi C: Conferences. vol. 1, 568-572.
10.1002/pssc.200304041
Moldovan G, Harrison I, Humphreys CJ, Kappers M, Brown PD(2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Materials Science and Technology vol. 20, (4) 533-538.
10.1179/026708304225012008
Kaestner B, Schönjahn C, Humphreys CJ(2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Applied Physics Letters vol. 84, (12) 2109-2111.
10.1063/1.1689755
Taylor RA, Robinson JW, Rice JH, Jarjour A, Smith JD, Oliver RA, Briggs GAD, Kappers MJ et al. (2004). Dynamics of single InGaN quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. vol. 21, 285-289.
10.1016/j.physe.2003.11.022
Rice JH, Oliver RA, Robinson JW, Smith JD, Taylor RA, Briggs GAD, Kappers MJ, Humphreys CJ et al. (2004). InGaN quantum dots grown by MOVPE via a droplet epitaxy route. Physica E: Low-Dimensional Systems and Nanostructures. vol. 21, 546-550.
10.1016/j.physe.2003.11.074
Belyaev AE, Makarovsky O, Walker DJ, Eaves L, Foxon CT, Novikov SV, Zhao LX, Dykeman RI et al. (2004). Resonance and current instabilities in AlN/GaN resonant tunnelling diodes. Physica E: Low-Dimensional Systems and Nanostructures. vol. 21, 752-755.
10.1016/j.physe.2003.11.119
Humphreys C(2004). Can a Materials Scientist Move Mount Sinai?. MRS Bulletin vol. 29, (4) 222-223.
10.1557/mrs2004.65
Kazemian P, Rodenburg C, Humphreys CJ (2004). Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM. Microelectronic Engineering. vol. 73-74, 948-953.
10.1016/S0167-9317(04)00249-7
Campbell LC, Wilkinson MJ, Manz A, Camilleri P, Humphreys CJ(2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Lab on a Chip vol. 4, (3) 225-229.
10.1039/b312592k
Arutyunov NY, Emtsev VV, Mikhailin AV, Humphreys CJ (2003). Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data. Physica B: Condensed Matter. vol. 340-342, 412-415.
10.1016/j.physb.2003.09.233
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ(2003). Electron-beam-induced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope. Applied Physics Letters vol. 83, (26) 5419-5421.
10.1063/1.1636534
Smeeton TM, Kappers MJ, Barnard JS, Humphreys CJ (2003). Analysis of InGaN-Gan quantum well chemistry and interfaces by transmission electron microscopy and X-ray scattering. Materials Research Society Symposium - Proceedings. vol. 798, 787-792.
Foxon CT, Novikov SV, Belyaev AE, Zhao LX, Makarovsky O, Walker DJ, Eaves L, Dykeman RI et al. (2003). Current-voltage instabilities in GaN/AlGaN resonant tunnelling structures. Physica Status Solidi C: Conferences. 2389-2392.
10.1002/pssc.200303376
Oliver RA, Kappers MJ, Rice JH, Smith JD, Taylor RA, Humphreys CJ, Briggs GAD (2003). Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal. Physica Status Solidi C: Conferences. 2515-2519.
10.1002/pssc.200303264
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ (2003). Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy. Physica Status Solidi (B) Basic Research. vol. 240, 297-300.
10.1002/pssb.200303262
Graham DM, Soltani Vala A, Dawson P, Godfrey MJ, Kappers MJ, Smeeton TM, Barnard JS, Humphreys CJ et al. (2003). Exciton localization in InGaN/GaN single quantum well structures. Physica Status Solidi (B) Basic Research. vol. 240, 344-347.
10.1002/pssb.200303338
Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ, Humphreys CJ(2003). Comment on "AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)]. Applied Physics Letters vol. 83, (17) 3626-3627.
10.1063/1.1622987
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al.(2003). Time-resolved dynamics in single InGaN quantum dots. Applied Physics Letters vol. 83, (13) 2674-2676.
10.1063/1.1614831
Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ, Foxon CT(2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Journal of Crystal Growth vol. 256, (3-4) 237-242.
10.1016/S0022-0248(03)01359-9
Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS, Humphreys CJ(2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Journal of Applied Physics vol. 94, (3) 1565-1574.
10.1063/1.1587251
Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD, Taylor RA(2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters vol. 83, (4) 755-757.
10.1063/1.1595716
Schönjahn C, Broom RF, Humphreys CJ, Howie A, Mentink SAM(2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Applied Physics Letters vol. 83, (2) 293-295.
10.1063/1.1592302
Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ, Bougrioua Z(2003). Detailed interpretation of electron transport in n-GaN. Journal of Applied Physics vol. 93, (11) 9095-9103.
10.1063/1.1571220
Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ, Humphreys CJ(2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters vol. 82, (17) 2755-2757.
10.1063/1.1570515
Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ, Humphreys CJ (2003). Arsenic incorporation in GaN during growth by molecular beam epitaxy. Journal of Crystal Growth. vol. 251, 510-514.
10.1016/S0022-0248(02)02243-1
Keast VJ, Kappers MJ, Humphreys CJ (2003). Electron energy-loss near edge structure (ELNES) of InGaN quantum wells. Journal of Microscopy. vol. 210, 89-93.
10.1046/j.1365-2818.2003.01180.x
Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG et al. (2003). GaN/InGaN quantum wells grown in a close coupled showerhead reactor. Journal of Crystal Growth. vol. 248, 518-522.
10.1016/S0022-0248(02)01929-2
Schönjahn C, Humphreys CJ, Glick M(2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. Journal of Applied Physics vol. 92, (12) 7667-7671.
10.1063/1.1525862
Schönjahn C, Humphreys C, Glick M (2002). Energy filtered imaging in a FEG-SEM for enhanced dopant contrast. Microscopy and Microanalysis. vol. 8, 718-719.
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW(2002). Response to "comment on 'Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells'" [Appl. Phys. Lett. 81, 3100 (2002)]. Applied Physics Letters vol. 81, (16) 3102-3103.
10.1063/1.1515887
Keast VJ, Scott AJ, Kappers MJ, Foxon CT, Humphreys CJ(2002). Electronic structure of GaN and In<inf>x</inf>Ga<inf>1-x</inf>N measured with electron energy-loss spectroscopy. Physical Review B - Condensed Matter and Materials Physics vol. 66, (12) 1253191-1253197.
10.1103/PhysRevB.66.125319
Thrush EJ, Kappers MJ, Dawson P, Graham D, Barnard JS, Vickers ME, Considine L, Mullins JT et al. (2002). GaN-InGaN quantum well and LED structures grown in a close coupled showerhead (CCS) MOCVD reactor. Physica Status Solidi (A) Applied Research. vol. 192, 354-359.
10.1002/1521-396X(200208)192:2<354::AID-PSSA354>3.0.CO;2-I
Elliott SL, Broom RF, Humphreys CJ(2002). Dopant profiling with the scanning electron microscope - A study of Si. Journal of Applied Physics vol. 91, (11) 9116-9122.
10.1063/1.1476968
Chen GS, Lee PY, Boothroyd CB, Humphreys CJ(2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films vol. 20, (3) 986-990.
10.1116/1.1464842
Thomas SM, Humphreys C(2002). Colin Humphreys - A practical physicist having fun in the world of materials. MATERIALS WORLD vol. 10, (1) 11-11.
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ(2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. Journal of Applied Physics vol. 91, (1) 367-374.
10.1063/1.1419210
Bright AN, Sharma N, Humphreys CJ(2001). Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy. Journal of Electron Microscopy vol. 50, (6) 489-495.
10.1093/jmicro/50.6.489
Bright AN, Humphreys CJ(2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterostructures using high-resolution electron microscopy. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties vol. 81, (11) 1725-1744.
10.1080/13642810110079962
Bright AN, Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES. vol. 81, 1725-1744.
10.1080/13642810108223115
Cho HK, Lee JY, Kim CS, Yang GM, Sharma N, Humphreys C(2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. Journal of Crystal Growth vol. 231, (4) 466-473.
10.1016/S0022-0248(01)01522-6
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW(2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. Applied Physics Letters vol. 79, (16) 2594-2596.
10.1063/1.1410362
Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T et al.(2001). Chemical mapping of InGaN MQWs. Journal of Crystal Growth vol. 230, (3-4) 438-441.
10.1016/S0022-0248(01)01252-0
Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ, Thrush EJ(2001). Observation of thermally activated conduction at a GaN-sapphire interface. Applied Physics Letters vol. 79, (8) 1121-1123.
10.1063/1.1395525
Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N, Humphreys C(2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. Journal of Applied Physics vol. 90, (2) 947-952.
10.1063/1.1379780
Pankhurst DA, Botton GA, Humphreys CJ(2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. Physical Review B - Condensed Matter and Materials Physics vol. 63, (20)
10.1103/PhysRevB.63.205117
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ(2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. Materials Science and Engineering B: Solid-State Materials for Advanced Technology vol. 81, (1-3) 19-22.
10.1016/S0921-5107(00)00677-2
Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ, Davies R(2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. Journal of Applied Physics vol. 89, (6) 3143-3150.
10.1063/1.1347003
Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD, Humphreys CJ(2001). Microstructure of semiconducting MnSi<inf>1.7</inf> and β-FeSi<inf>2</inf> layers grown by surfactant-mediated reactive deposition epitaxy. Thin Solid Films vol. 381, (2) 231-235.
10.1016/S0040-6090(00)01749-1
Bright AN, Tricker DM, Humphreys CJ, Davies R(2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. Journal of Electronic Materials vol. 30, (3) L13-L16.
10.1007/s11664-001-0030-2
Sharma N, Kappers M, Barnard J, Vickers M, Humphreys C (2001). Chemical mapping of InGaN/GaN LEDs. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001. 263-266.
Sharma N, Cho HK, Lee JY, Humphreys CJ(2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. Materials Research Society Symposium - Proceedings vol. 667, G671-G676.
Keast VJ, Scott AJ, Kappers MJ, Humphreys CJ (2001). Electronic structure of GaN studied with electron energy loss spectroscopy and density functional theory. ELECTRON MICROSCOPY AND ANALYSIS 2001. 441-444.
Keast VJ, Sharma N, Humphreys CJ (2001). Energy-loss spectroscopy of GaN alloys and quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001. 259-262.
Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L et al.(2001). Material optimisation for AlGaN/GaN HFET applications. Journal of Crystal Growth vol. 230, (3-4) 573-578.
10.1016/S0022-0248(01)01303-3
Ramloll CS, Bougrioua Z, Barnard JS, Humphreys CJ, Moerman I (2001). Microstructural aspects of the early stages of GaN growth by MOCVD. ELECTRON MICROSCOPY AND ANALYSIS 2001. 469-472.
Elliott SL, Broom RF, Humphreys CJ (2001). SEM doping contrast at a Si pn junction. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001. 431-434.
Barnard JS, Sharma N, Cho HK, Humphreys CJ (2001). The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study. ELECTRON MICROSCOPY AND ANALYSIS 2001. 481-484.
Saifullah MSM, Kurihara K, Humphreys CJ(2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures vol. 18, (6) 2737-2744.
10.1116/1.1323970
Sharma N, Thomas P, Tricker D, Humphreys C(2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Applied Physics Letters vol. 77, (9) 1274-1276.
10.1063/1.1289904
Pekarskaya E, Botton GA, Jones CN, Humphreys CJ(2000). Effect of annealing on the microstructure and tensile properties of a β/γ′ Ni-Al-Fe alloy. Intermetallics vol. 8, (8) 903-913.
10.1016/S0966-9795(00)00029-7
Sharma N, Tricker D, Keast V, Hooper S, Heffernan J, Barnes J, Kean A, Humphreys C (2000). Effect of the buffer layer on the structure, mobility and photoluminescence of MBE grown GaN. Materials Research Society Symposium - Proceedings. vol. 595,
Humphreys C(2000). Facing up to the future of materials science and technology. Materials World vol. 8, (4) 11-13.
Botton GA, Nishino Y, Humphreys CJ(2000). Microstructural evolution and stability of (Fe<inf>1-x</inf>V<inf>x</inf>)<inf>3</inf>Al alloys in relation to the electronic structure. Intermetallics vol. 8, (9-11) 1209-1214.
10.1016/S0966-9795(00)00043-1
Humphreys C(2000). Oxbridge and the public schools. MATERIALS WORLD vol. 8, (1) 2-3.
Fairbank GB, Humphreys CJ, Kelly A, Jones CN (2000). Ultra-high temperature intermetallics for the third millennium. Intermetallics. vol. 8, 1091-1100.
10.1016/S0966-9795(00)00040-6
Pekarskaya E, Jones CN, Humphreys CJ(1999). Comparative study of the microstructure and tensile properties of Ni-Al alloys with Fe and Cr additions. Materials Research Society Symposium - Proceedings vol. 552,
Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ, Temmerman WM(1999). Electronic structure, charge transfer and bonding in intermetallics using EELS and density functional theory. Materials Research Society Symposium - Proceedings vol. 552,
Chen GS, Humphreys CJ(1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. Journal of Applied Physics vol. 85, (1) 148-152.
10.1063/1.369461
Humphreys CJ(1999). Physical chemistry: Electrons seen in orbit. Nature vol. 401, (6748) 21-22.
10.1038/43323
Saifullah MSM, Botton GA, Boothroyd CB, Humphreys CJ(1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF<inf>3</inf>. Journal of Applied Physics vol. 86, (5) 2499-2504.
10.1063/1.371083
Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A, Richter W(1999). Transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. Journal of Materials Research vol. 14, (8) 3226-3236.
10.1557/JMR.1999.0436
Natusch MKH, Humphreys CJ, Menon N, Krivanek OL (1999). Experimental and theoretical study of the detection limits in electron energy-loss spectroscopy. Micron. vol. 30, 173-183.
10.1016/S0968-4328(99)00021-9
Humphreys CJ(1999). A two-phase charge-density real-space-pairing model of high-T<inf>c</inf> superconductivity. Acta Crystallographica Section A: Foundations of Crystallography vol. 55, (2 PART I) 228-233.
10.1107/s0108767398014093
Humphreys CJ(1999). A two-phase charge-density real-space-pairing model of high-Tc superconductivity. Acta Crystallogr A vol. 55, (Pt 2 Pt 1) 228-233.
10.1107/s0108767398014093
Bright AN, Brown PD, Tricker DM, Jeffs N, Foxon CT, Humphreys CJ (1999). A TEM assessment of GaN/SiC layers grown by MBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. 415-418.
Walther T, Humphreys CJ(1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon-germanium/silicon layers by transmission electron microscopy. Journal of Crystal Growth vol. 197, (1-2) 113-128.
10.1016/S0022-0248(98)00930-0
Humphreys CJ, Bright AN, Elliott SL (1999). Advances in high resolution imaging and microanalysis of Si, GaAs and GaN. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. 1-10.
Tricker DM, Jacobs K, Humphreys CJ (1999). Characterisation of epitaxial laterally overgrown gallium nitride using transmission electron microscopy. Physica Status Solidi (B) Basic Research. vol. 216, 633-637.
10.1002/(SICI)1521-3951(199911)216:1<633::AID-PSSB633>3.0.CO;2-O
Bright AN, Tricker DM, Davies R, Beanland R, Thomas PJ, Lloyd SJ, Midgley PA, Humphreys CJ (1999). Characterisation of ohmic contacts to n-GaN using transmission electron microscopy. ELECTRON MICROSCOPY AND ANALYSIS 1999. 597-600.
Sharma N, Keast VJ, Iwayama TS, Boyd I, Humphreys CJ (1999). Characterisation of silicon nanocrystals in silica and correlation with luminescence. ELECTRON MICROSCOPY AND ANALYSIS 1999. 589-592.
Keast VJ, Midgley PA, Lloyd SJ, Thomas PJ, Weyland M, Boothroyd CB, Humphreys CJ (1999). Composition of grain boundaries and interfaces: A comparison of modern analytical techniques using a 300 kV FEGTEM. ELECTRON MICROSCOPY AND ANALYSIS 1999. 35-38.
Keast VJ, Misra A, Kung H, Mitchell TE, Humphreys CJ (1999). Compositional mapping of nanoscale metallic multilayers: a comparison of techniques. ELECTRON MICROSCOPY AND ANALYSIS 1999. 211-214.
Humphreys CJ (1999). Convergent beam electron diffraction. IMPACT OF ELECTRON AND SCANNING PROBE MICROSCOPY ON MATERIALS RESEARCH. vol. 364, 325-337.
Etheridge J, Moodie AF, Humphreys CJ (1999). DIRECT MEASUREMENT OF PHASE-INVARIANTS AND STRUCTURE AMPLITUDES FROM 3 BEAM CBED PATTERNS. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 55, 24-24.
Botton GA, Humphreys CJ (1999). Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory. Intermetallics. vol. 7, 829-833.
10.1016/S0966-9795(98)00133-2
Pekarskaya E, Jones CN, Humphreys CJ (1999). Dislocations in a multiphase Ni-Al-Fe alloy. ELECTRON MICROSCOPY AND ANALYSIS 1999. 463-466.
Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD, Richter W(1999). Effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. Journal of Materials Research vol. 14, (5) 2036-2042.
10.1557/JMR.1999.0275
Smith JP, Eccleston W, Brown PD, Humphreys CJ(1999). Electronic and structural properties of partially crystallized silicon produced by solid-phase crystallization of as-deposited amorphous silicon. Journal of the Electrochemical Society vol. 146, (1) 306-312.
10.1149/1.1391605
Liu CP, Boothroyd CB, Humphreys CJ(1999). Energy-filtered transmission electron microscopy of multilayers in semiconductors. Journal of Microscopy vol. 194, (1) 58-70.
10.1046/j.1365-2818.1999.00459.x
Elliott SL, Broom RF, Humphreys CJ, Thrush EJ, Considine L, Thomson DB, de Boer WB (1999). FEG-SEM imaging of semiconductor dopant contrast. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. 727-730.
Moodie AF, Etheridge J, Humphreys CJ (1999). GEOMETRY OF THREE BEAM PHASE DETERMINATION. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 55, 24-24.
Brown PD, Weyher JL, Boothroyd CB, Foord DT, Zauner ARA, Hageman PR, Larsen PK, Bockowski M et al. (1999). Inversion domain nucleation in homoepitaxial GaN. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. 381-384.
Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ et al.(1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Journal of Crystal Growth vol. 204, (4) 419-428.
10.1016/S0022-0248(99)00217-1
Pankhurst DA, Botton GA, Humphreys CJ (1999). Obtaining bonding information from EELS near-edge structures: grain-boundaries in NiAl. ELECTRON MICROSCOPY AND ANALYSIS 1999. 67-70.
Humphreys CJ, Botton GA (1999). Probing atomic bonding using fast electrons. TOPICS IN ELECTRON DIFFRACTION AND MICROSCOPY OF MATERIALS. 65-78.
Liu CP, Preston AR, Boothroyd CB, Humphreys CJ(1999). Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images. Journal of Microscopy vol. 194, (1) 171-182.
10.1046/j.1365-2818.1999.00458.x
Yonenaga I, Lim SH, Shindo D, Brown PD, Humphreys CJ(1999). Structure and climb of faulted dipoles in GaAs. Physica Status Solidi (A) Applied Research vol. 171, (1) 53-57.
10.1002/(SICI)1521-396X(199901)171:1<53::AID-PSSA53>3.0.CO;2-I
Whitfield HJ, Moodie AF, Etheridge J, Humphreys CJ (1999). THE VALIDITY OF QUASI-KINEMATIC THEORY IN ELECTRON CRYSTALLOGRAPHY. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 55, 24-24.
Elliott SL, Broom RF, Humphreys CJ (1999). Temperature and energy dependence of SEM dopant contrast. ELECTRON MICROSCOPY AND ANALYSIS 1999. 87-90.
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al.(1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS vol. 37, (12A) 6556-6561.
10.1143/JJAP.37.6556
Ogawa H, Watanabe M, Ohsato H, Humphreys C(1998). Microwave dielectric properties of (Y<inf>2-x</inf>R<inf>x</inf>)BaCuO<inf>5</inf> (R = rare-earth) solid solutions. IEEE International Symposium on Applications of Ferroelectrics517-520.
Humphreys C(1998). Stuff of dreams. New Scientist vol. 157, (2126) 44-45.
Yonenaga I, Brown PD, Humphreys CJ(1998). Climb of dislocations in GaAs by irradiation. Materials Science and Engineering A vol. 253, (1-2) 148-150.
10.1016/s0921-5093(98)00723-0
Watanabe M, Ogawa H, Ohsato H, Humphreys C (1998). Microwave dielectric properties of Y2Ba(Cu1-xZnx)O-5 solid solutions. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. vol. 37, 5360-5363.
10.1143/JJAP.37.5360
Watanabe M, Ogawa H, Ohsato H, Humphreys C(1998). Microwave dielectric properties of Y<inf>2</inf>Ba(Cu<inf>1-x</inf>Zn<inf>x</inf>)O<inf>5</inf> solid solutions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37, (9 PART B) 5360-5363.
Humphreys C(1998). Shaping the future of materials science. Materials World vol. 6, (6) 352-355.
Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y, Humphreys CJ(1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. Journal of Applied Physics vol. 83, (10) 5504-5508.
10.1063/1.367410
Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ, Sutton AP(1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. PHYSICAL REVIEW B vol. 57, (3) 1505-1509.
10.1103/PhysRevB.57.1505
Tricker DM, Bright AN, Brown PD, Korakakis D, Cheng TS, Foxon CT, Humphreys CJ (1998). A TEM study of a GaN/InGaN superlattice structure grown by MBE. ELECTRON MICROSCOPY 1998, VOL 3. 393-394.
Tricker DM, Brown PD, Cheng TS, Foxon CT, Humphreys CJ (1998). A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates. Applied Surface Science. vol. 123-124, 22-27.
10.1016/S0169-4332(97)00475-3
Pankhurst DA, Botton GA, Humphreys CJ (1998). A joint theoretical and experimental investigation of bonding character at a grain boundary in the B2 compound NiAl. ELECTRON MICROSCOPY 1998, VOL 2. 643-644.
Humphreys CJ (1998). A microstructural model of high-T-c superconductivity. ELECTRON. 124-134.
Natusch MKH, Botton GA, Humphreys CJ (1998). A simple and efficient way to obtain more information about interband transitions from an electron energy-loss spectrum in the low-loss region. ELECTRON MICROSCOPY 1998, VOL 3. 627-628.
Lim SH, Shindo D, Yonenaga I, Brown PD, Humphreys CJ(1998). Atomic arrangement of a Z-shape faulted dipole within deformed GaAs. Physical Review Letters vol. 81, (24) 5350-5353.
10.1103/PhysRevLett.81.5350
Natusch MKH, Botton GA, Krivanek OL, Humphreys CJ (1998). Characterisation of a Gatan Imaging Filter mounted on a dedicated STEM. ELECTRON MICROSCOPY 1998, VOL 1. 95-96.
Natusch MKH, Botton GA, Krivanek OL, Humphreys CJ (1998). Detection limits in electron energy-loss spectroscopy and energy-filtered imaging. ELECTRON MICROSCOPY 1998, VOL 3. 651-652.
Etheridge J, Moodie AF, Humphreys CJ (1998). Direct measurement of structure amplitudes from three beam interactions. ELECTRON MICROSCOPY 1998, VOL 3. 737-738.
Nishino Y, Inkson BJ, Ogawa T, Humphreys CJ(1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe<inf>3</inf>Al alloys. Philosophical Magazine Letters vol. 78, (2) 97-103.
10.1080/095008398178075
Brown PD, Humphreys CJ (1998). Electron microscopy, electrical activity, artefacts and the assessment of semiconductor epitaxial growth. ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES. vol. 523, 207-224.
10.1557/PROC-523-207
Chen GS, Boothroyd CB, Humphreys CJ(1998). Electron-beam-induced damage in amorphous SiO<inf>2</inf> and the direct fabrication of silicon nanostructures. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 78, (2) 491-506.
10.1080/01418619808241915
Liu CP, Boothroyd CB, Humphreys CJ (1998). Energy-filtered transmission electron microscopy of multilayers in semiconductors. ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES. vol. 523, 159-164.
10.1557/PROC-523-159
Natusch MKH, Botton GA, Humphreys CJ (1998). Evidence for charged defects in wurtzite GaN from spatially resolved electron energy-loss spectroscopy. ELECTRON MICROSCOPY 1998, VOL 3. 391-392.
Campbell LCI, Humphreys CJ (1998). Experimental investigation of the effect of defocus on beam diameter in focused ion beam milling. ELECTRON MICROSCOPY 1998, VOL 3. 157-158.
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al.(1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37, (12) 6556-6561.
10.1143/jjap.37.6556
Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ (1998). Irradiation damage of inorganic resists on a silicon substrate. ELECTRON. 531-537.
Natusch MKH, Botton GA, Humphreys CJ (1998). Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy. GROWTH AND PROCESSING OF ELECTRONIC MATERIALS. 30-36.
Kaiser U, Brown PD, Chuvilin A, Khodos I, Fissel A, Richter W, Preston A, Humphreys CJ (1998). Observation of 3-fold periodicity in 3C-SiC layers grown by MBE. Materials Science Forum. vol. 264-268, 259-262.
10.4028/www.scientific.net/MSF.264-268.259
Bright A, Brown PD, Tricker D, Humphreys C (1998). RHEED for the rapid structural assessment of epitaxial GaN and metallisation layers. ELECTRON MICROSCOPY 1998, VOL 3. 439-440.
Liu CP, Boothroyd CB, Humphreys CJ (1998). The Compton scattering distribution from InP by electron spectroscopic diffraction. ELECTRON. 456-463.
Moodie AF, Etheridge J, Humphreys CJ (1998). The Coulomb interaction and the direct measurement of structural phase. ELECTRON. 235-246.
Natusch MKH, Botton GA, Humphreys CJ, Krivanek OL (1998). The ultimate detection limits of electron energy-loss spectroscopy. ELECTRON. 476-483.
Brown PD, Tricker DM, Xin Y, Cheng TS, Foxon CT, Evans D, Galloway SA, Brock J et al. (1997). Combined TEM/RHEED, SEM/CL study of epitaxial GaN. Materials Research Society Symposium - Proceedings. vol. 482, 399-404.
Natusch MKH, Botton GA, Broom RF, Brown PD, Tricker DM, Humphreys CJ (1997). Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy. Materials Research Society Symposium - Proceedings. vol. 482, 763-768.
Tricker DM, Brown PD, Martin G, Lu J, Westwood DI, Hill P, Haworth L, Macdonald JE et al. (1997). TEM study of the microstructural evolution of MBE-grown GaN. Materials Research Society Symposium - Proceedings. vol. 482, 87-92.
Chen GS, Humphreys CJ(1997). Investigation of the proximity effect in amorphous AlF<inf>3</inf> electron-beam resists. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures vol. 15, (6) 1954-1960.
10.1116/1.589584
Walther T, Humphreys CJ, Cullis AG(1997). Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy. Applied Physics Letters vol. 71, (6) 809-811.
10.1063/1.119653
Botton GA, Humphreys CJ(1997). Analysis of EELS near edge structures to study the bonding character in intermetallic alloys. Micron vol. 28, (4) 313-319.
10.1016/S0968-4328(97)00018-8
Liu CP, Dunin-Borkowski RE, Boothroyd CB, Brown PD, Humphreys CJ(1997). Characterization of ultrathin doping layers in semiconductors. Microscopy and Microanalysis vol. 3, (4) 352-363.
10.1017/S1431927697970276
Xin Y, Brown PD, Humphreys CJ, Cheng TS, Foxon CT(1997). Domain boundaries in epitaxial wurtzite GaN. Applied Physics Letters vol. 70, (10) 1308-1310.
10.1063/1.118520
Campbell LCI, Foord DT, Humphreys CJ (1997). 'Nano-machining' using a focused ion beam. ELECTRON MICROSCOPY AND ANALYSIS 1997. 657-660.
Walther T, Humphreys CJ, Cullis AG, Robbins DJ (1997). A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 47-54.
Wiezorek JMK, Humphreys CJ, Fraser HL(1997). Determining directly from experiment the magnitude of the burgers vector of glissile 〈c〉-component dislocations in Ti<inf>3</inf>Al. Philosophical Magazine Letters vol. 75, (5) 281-289.
10.1080/095008397179534
Natusch MKH, Botton GA, Humphreys CJ (1997). Developing a methodology for the electron energy-loss spectroscopy of defects in GaN. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 213-216.
Walther T, Humphreys CJ, Robbins DJ (1997). Diffusion and surface segregation in thin SiGe/Si layers studied by scanning transmission electron microscopy. Defect and Diffusion Forum. vol. 143-147, 1135-1140.
10.4028/www.scientific.net/DDF.143-147.1135
Xin Y, Brown PD, Cheng TS, Foxon CT, Humphreys CJ (1997). Domain boundaries in epitaxial GaN grown on {(111)over-bar}B GaAs and GaP by molecular beam epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 95-98.
Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ (1997). Electron beam damage in titanium dioxide films. ELECTRON MICROSCOPY AND ANALYSIS 1997. 167-170.
Botton GA, Guo GY, Temmerman WM, Humphreys CJ (1997). Electron energy loss spectroscopy as a tool to probe the electronic structure in intermetallic alloys. PROPERTIES OF COMPLEX INORGANIC SOLIDS. 175-180.
Humphreys C (1997). Electron microscopy and analysis: the future. ELECTRON MICROSCOPY AND ANALYSIS 1997. 31-34.
Cheng TS, Foxon CT, Ren GB, Jeffs NJ, Orton JW, Novikov SV, Xin Y, Brown PD et al. (1997). Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy. COMPOUND SEMICONDUCTORS 1996. 259-262.
Pekarskaya E, Botton A, Jones CN, Humphreys CJ (1997). Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy. ELECTRON MICROSCOPY AND ANALYSIS 1997. 549-552.
Botton GA, Burnell G, Humphreys CJ, Yadav T, Withers JC(1997). Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts. Journal of Physics and Chemistry of Solids vol. 58, (7) 1091-1102.
10.1016/S0022-3697(97)00233-3
Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS, Foxon CT(1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. Journal of Crystal Growth vol. 171, (3-4) 321-332.
10.1016/S0022-0248(96)00663-X
Kaiser U, Brown PD, Jinschek J, Adamik M, Humphreys CJ, Karmann S, Fissel A, Pfennighaus K et al. (1997). Microstructural investigations of silicon carbide and aluminium nitride MBE layers on silicon substrates. EUROPEAN JOURNAL OF CELL BIOLOGY. vol. 74, 120-120.
Natusch MKH, Botton GA, Humphreys CJ, Krivanek OL (1997). Modelling of electron energy-loss spectroscopy detection limits. ELECTRON MICROSCOPY AND ANALYSIS 1997. 339-342.
Holzl M, Botton GA, Nelhiebel M, Humphreys CJ, Jouffrey B, Grogger W, Hofer F, Schattschneider P (1997). Observation of the mixed dynamic form factor in the AgM4,5-edge. ELECTRON MICROSCOPY AND ANALYSIS 1997. 171-174.
Tricker DM, Natusch MKH, Boothroyd CB, Xin Y, Brown PD, Cheng TS, Foxon CT, Humphreys CJ (1997). Probing the effect of defects on band structure in GaN. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 217-220.
Walther T, Humphreys CJ (1997). Quantification of the composition of silicon germanium/silicon structures by high-angle annular dark field imaging. ELECTRON MICROSCOPY AND ANALYSIS 1997. 303-306.
Brown PD, Smith JP, Eccleston W, Humphreys CJ (1997). Structural and electronic properties of partially crystallised silicon. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 427-430.
Tatsuoka H, Brown PD, Xin Y, Isaji K, Kuwabara H, Nakanishi Y, Nakamura T, Fujiyasu H et al. (1997). Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 59-62.
Liu CP, Boothroyd CB, Brown PD, Humphreys CJ (1997). The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 67-70.
Liu CP, Brown PD, Boothroyd CB, Humphreys CJ (1997). The effects of surface relaxation and ion thinning on delta-doped semiconductor cross-sections. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. 483-486.
Botton GA, Guo GY, Temmerman WM, Szotek Z, Humphreys CJ, Wang Y, Stocks GM, Nicholson DMC et al. (1996). EELS studies of B2-type transition metal aluminides: experiment and theory. Materials Research Society Symposium - Proceedings. vol. 408, 567-572.
Xin Y, Brown PD, Boothroyd CB, Preston AR, Humphreys CJ, Cheng TS, Foxon CT, Andrianov AV et al. (1996). TEM and PL characterization of MBE-grown epitaxial GaN/GaAs. Materials Research Society Symposium - Proceedings. vol. 423, 311-316.
10.1557/PROC-423-311
Brown PD, Humphreys CJ(1996). Scanning transmission electron beam induced conductivity investigation of a Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructure. Journal of Applied Physics vol. 80, (4) 2527-2529.
10.1063/1.363038
Humphreys C(1996). Missed opportunities for high-temperature superconductivity. PHYSICS WORLD vol. 9, (8) 15-15.
10.1088/2058-7058/9/8/14
Botton GA, Guo GY, Temmerman WM, Humphreys CJ(1996). Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure. Phys Rev B Condens Matter vol. 54, (3) 1682-1691.
10.1103/physrevb.54.1682
Chen GS, Boothroyd CB, Humphreys CJ(1996). Electron-beam induced crystallization transition in self-developing amorphous AIF<inf>3</inf> resists. Applied Physics Letters vol. 69, (2) 170-172.
10.1063/1.117361
Moodie AF, Etheridge J, Humphreys CJ(1996). The symmetry of three-beam scattering equations: Inversion of three-beam diffraction patterns from centrosymmetric crystals. Acta Crystallographica Section A: Foundations of Crystallography vol. 52, (4) 596-605.
10.1107/S0108767396001171
Loginov YY, Brown PD, Humphreys CJ(1996). Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions. Physics of the Solid State vol. 38, (4) 692-697.
Loginov YY, Brown PD, Humphreys CJ(1996). Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs. Physics of the Solid State vol. 38, (2) 272-277.
Chen Q, Knowles KM, Humphreys CJ, Wu XF(1996). Atom positions in the R-phase unit cell in TiNi shape memory alloy. Journal of Materials Science vol. 31, (16) 4227-4231.
10.1007/BF00356443
Etheridge J, Moodie AF, Humphreys CJ (1996). DIRECT DETERMINATION OF PHASE FROM THREE BEAM CONVERGENT BEAM DIFFRACTION PATTERNS OF CENTROSYMMETRIC CRYSTALS. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 52, C54-C54.
10.1107/S0108767396096857
Loginov YY, Brown PD, Humphreys CJ(1996). Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs. Inorganic Materials vol. 32, (1) 22-25.
Inkson BJ, Humphreys CJ(1996). Dislocations at 120° order interfaces in TiAl. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 73, (5) 1333-1345.
10.1080/01418619608245136
Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ (1996). Electron beam induced crystallisation in iron (III) fluoride. Materials Research Society Symposium - Proceedings. vol. 398, 195-200.
Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ et al.(1996). Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method. MRS Internet Journal of Nitride Semiconductor Research vol. 1,
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Walther T, Humphreys CJ, Cullis AG, Robbins DJ(1995). Correlation between compositional fluctuations and surface undulations in strained layer epitaxy. Materials Science Forum vol. 196-201, (pt 1) 505-510.
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Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T et al.(1995). The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy. Journal of Crystal Growth vol. 156, (3) 155-162.
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Xin Y, Zhou W, Humphreys CJ(1995). HREM studies of the (001) surface of YBa<inf>2</inf>Cu<inf>4</inf>O<inf>8</inf>. Physica C: Superconductivity and its applications vol. 249, (3-4) 319-332.
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Wiezorek JMK, Botton G, Humphreys CJ, Fraser HL (1995). A TEM study of dislocation decoration in gamma-TiAl. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 515-518.
Morgan CJ, Boothroyd CB, Humphreys CJ (1995). A comparative study of electron beam damage in crystalline and amorphous aluminium oxide. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 567-570.
Walther T, Hetherington CJD, Humphreys CJ (1995). A contribution to the quantitative comparison of experimental high-resolution electron micrographs and image simulations. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 53-56.
Brown PD, Loginov YY, Boothroyd CB, Humphreys CJ (1995). Artefacts within ion beam milled semiconductors. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 393-396.
Brown PD, Humphreys CJ(1995). Assessment of semiconductor epitaxial growth by transmission electron microscopy. Materials Science and Technology (United Kingdom) vol. 11, (1) 54-65.
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Inkson BJ, Boothroyd CB, Humphreys CJ(1995). Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase. Acta Metallurgica Et Materialia vol. 43, (4) 1429-1438.
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Loginov YY, Brown PD, Humphreys CJ (1995). Control of point defects in semiconductors. Materials Research Society Symposium - Proceedings. vol. 373, 529-534.
Walther T, Humphreys CJ, Grimshaw MP, Churchill AC(1995). Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 72, (4) 1015-1030.
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Xin Y, Brown PD, Humphreys CJ (1995). Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructures. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 87-90.
Saifullah MSM, Boothroyd CB, Morgan CJ, Humphreys CJ (1995). Electron beam nanolithography of FeF3 using a scanning transmission electron microscope. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 325-328.
Wiezorek JMK, Court SA, Humphreys CJ (1995). Experimental TEM and image simulation of 〈a〉 dislocations in Ti<inf>3</inf>Al. Materials Research Society Symposium - Proceedings. vol. 364, 659-664.
Yonenaga I, Brown PD, Burgess WG, Humphreys CJ (1995). Faulted dipoles in Indium-doped GaAs. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 87-90.
Inkson BJ, Humphreys CJ (1995). HREM investigation of a {12̄1}<inf>L1o</inf> boundary in TiAl. Materials Research Society Symposium - Proceedings. vol. 364, 605-610.
Cullen SL, Morgan CJ, Boothroyd CB, Humphreys CJ (1995). HREM lattice image simulations of circular cross-sectional multishell carbon nanotubes. Materials Research Society Symposium - Proceedings. vol. 359, 247-252.
Inkson BJ, Humphreys CJ (1995). HREM observation of omega-phase in an industrial TiAl alloy. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 547-550.
Inkson BJ, Humphreys CJ(1995). High-resolution electron microscopy observation of a<sup>1</sup>/<inf>2</inf>(112) superdislocation in Tial. Philosophical Magazine Letters vol. 71, (6) 307-312.
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Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR, Humphreys CJ(1995). Measurement of low-order structure factors for silicon from zone-axis CBED patterns. Ultramicroscopy vol. 60, (2) 311-323.
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Brown PD, Loginov YY, Stobbs WM, Humphreys CJ(1995). Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 72, (1) 39-57.
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Morgan CJ, Humphreys CJ (1995). Model for estimating the stress induced during oxidation of sharp silicon structures. Materials Research Society Symposium - Proceedings. vol. 389, 191-196.
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Xin Y, Brown PD, Schaublin RE, Humphreys CJ (1995). Relaxation of (001)Si/Si1-xGex/Si heterostructures. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 183-186.
Brown PD, Humphreys CJ (1995). STEBIC of Si/Si1-xGex/Si and high voltage REBIC of CdTe. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 701-704.
Brown PD, Humphreys CJ (1995). STEBIC of Si/Si1-xGex/Si heterostructures. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 285-288.
Walther T, Boothroyd CB, Humphreys CJ (1995). Strain relaxation induced local crystal tilts at Si/SiGe interfaces in cross-sectional transmission electron microscope specimens. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 11-16.
Loginov YY, Brown PD, Humphreys CJ (1995). Tem investigation of point defect interactions in II-VI compounds. Materials Science Forum. vol. 196-201, 1461-1466.
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Botton GA, Guo GY, Humphreys CJ (1995). The bonding character of intermetallic alloys using EELS. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 535-538.
Morgan CJ, Humphreys CJ (1995). The dependence of the rate of electron beam damage in amorphous aluminium oxide on beam current density. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 579-582.
Walther T, Humphreys CJ (1995). The limitations of pattern recognition and displacement measurement techniques for evaluating HREM images of strained semiconductor interfaces. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 103-106.
Peters MA, Botton GA, Humphreys CJ (1995). The precipitation of beta' Ni2TiAl from Al-doped beta Ni-Ti alloys. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 451-454.
Morgan CJ, Humphreys CJ (1995). The proximity effect for electron beam lithography of aluminium oxide. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 575-578.
Walther T, Schaublin RE, DuninBorkowski RE, Boothroyd CB, Humphreys CJ, Stobbs WM (1995). The role of plasmon scattering in the quantitative contrast analysis of high-resolution lattice images of GaAs. ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 195-198.
Cherns D, Mylonas S, Chou CT, Wu J, Ashenford DE, Lunn B, Perovic DD, Humphreys CJ (1994). Dislocation nucleation and propagation in semiconductor heterostructures. Scanning Microscopy. vol. 8, 841-848.
Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW, Humphreys CJ(1994). Transmission electron microscopy investigations of II-VI/GaAs heterostructures. Journal of Crystal Growth vol. 138, (1-4) 538-544.
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CHEN GS, MORGAN CJ, HUMPHREYS CJ (1994). A study of proximity effects in AlF3 electron beam resists. ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B. 1305-1306.
INKSON BJ, HUMPHREYS CJ (1994). An HREM study of 1/6<112> intrinsic dipole formation in a Ti-Al alloy. ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B. 83-84.
Burgess WG, Preston AR, Botton GA, Zaluzec NJ, Humphreys CJ(1994). Benefits of energy filtering for advanced convergent beam electron diffraction patterns. Ultramicroscopy vol. 55, (3) 276-283.
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Wiezorek JMK, Preston AR, Court SA, Fraser HL, Humphreys CJ(1994). Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 69, (2) 285-299.
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BROWN PD, HUMPHREYS CJ (1994). Defect anisotropy in (001) oriented sphalerite heteroepitaxial layers. ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B. 149-150.
BOTTON GA, HUMPHREYS CJ (1994). EELS near edge structures in B2 intermetallics: A systematic series. ELECTRON MICROSCOPY 1994, VOL 1. 631-632.
ALLEN RM, CHEN GS, HUMPHREYS CJ (1994). Electron beam damage in amorphous AlF3. A study of mass loss vs time. ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B. 1307-1308.
WHITE RS, HUMPHREYS CJ(1994). Famines and cataclysmic volcanism. Geology Today vol. 10, (5) 181-185.
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BOTTON GA, BURNELL G, HUMPHREYS CJ, YADAV T, WITHERS JC (1994). From carbon socks to web-like wires: The microstructure of multi-metal filled carbon nanostructures by TEM and EELS. ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B. 321-322.
Cullen SL, Boothroyd CB, Humphreys CJ (1994). Interpretation of the {100} fringes in lattice images from the centre of carbon nanotubes. Ultramicroscopy. vol. 56, 127-134.
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CULLEN SL, BOTTON G, HUMPHREYS CJ (1994). Momentum transfer dependence of the low energy loss distribution of carbon nanotubes. ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B. 311-312.
BURGESS W, SAUNDERS M, BIRD DM, PRESTON AR, ZALUZEC NJ, HUMPHREYS CJ (1994). Structure factor determination in germanium by zone axis CBED. ELECTRON MICROSCOPY 1994, VOL 1. 849-850.
WALTHER T, BOOTHROYD CB, HUMPHREYS CJ, CULLIS AG (1994). The effect of thin crystal strain relaxation on high-resolution images of Si/Si0.8Ge0.2 quantum wells. ELECTRON MICROSCOPY 1994, VOL 1. 365-366.
Chen GS, Boothroyd CB, Humphreys CJ(1993). Novel fabrication method for nanometer-scale silicon dots and wires. Applied Physics Letters vol. 62, (16) 1949-1951.
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INKSON BJ, BOOTHROYD CB, HUMPHREYS CJ (1993). BORON SEGREGATION IN A (FE, V, B) TIAL BASED ALLOY. JOURNAL DE PHYSIQUE IV. vol. 3, 397-402.
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ALLEN RM, LLOYD SJ, HUMPHREYS CJ (1993). A STUDY OF SAMPLE THICKNESS DEPENDENCE IN ELECTRON-BEAM HOLE-DRILLING OF INORGANIC MATERIALS. ELECTRON MICROSCOPY AND ANALYSIS 1993. 87-90.
SAUNDERS M, BIRD DM, ZALUZEC NJ, BURGESS WG, HUMPHREYS CJ (1993). ACCURATE STRUCTURE FACTOR REFINEMENT FROM ZONE-AXIS CBED PATTERNS. ELECTRON MICROSCOPY AND ANALYSIS 1993. 125-128.
MORGAN CJ, KIRKLAND AI, HUMPHREYS CJ (1993). AN HREM INVESTIGATION OF THE DIAMOND HEXAGONAL PHASE IN A SILICON CONE FROM A VACUUM MICROELECTRONIC DEVICE. ELECTRON MICROSCOPY AND ANALYSIS 1993. 267-270.
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PRESTON AR, BURGESS WG, PICKUP CJ, HUMPHREYS CJ (1993). DEBYE-WALLER FACTOR DETERMINATION FROM LACBED PATTERNS. ELECTRON MICROSCOPY AND ANALYSIS 1993. 145-148.
WIEZOREK JMK, HUMPHREYS CJ (1993). DETERMINATION OF STACKING-FAULT ENERGIES OF THE INTERMETALLIC TI-52AT-PERCENT AL. ELECTRON MICROSCOPY AND ANALYSIS 1993. 445-448.
CHEN GS, BOOTHROYD CB, HUMPHREYS CJ (1993). DIRECT ELECTRON-BEAM FABRICATION OF NANOMETER-SCALE SILICON COLUMNS. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. 503-508.
CHEN GS, BOOTHROYD CB, HUMPHREYS CJ (1993). ELECTRON-INDUCED CRYSTALLIZATION IN ALUMINUM TRIFLUORIDE. ELECTRON MICROSCOPY AND ANALYSIS 1993. 369-372.
HUMPHREYS CJ (1993). ELECTRON-MICROSCOPE INVESTIGATIONS OF HETEROSTRUCTURES, NANOSTRUCTURES AND MISFIT DISLOCATIONS. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. 441-448.
White RS, Humphreys C(1993). Evolution and religion [3]. Nature vol. 366, (6453)
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BROWN PD, KIRKLAND A, HUMPHREYS CJ (1993). HIGH-RESOLUTION PROFILE IMAGING OF (HG, MN)TE. ELECTRON MICROSCOPY AND ANALYSIS 1993. 209-212.
CULLEN SL, BOTTON G, KIRKLAND AI, BROWN PD, HUMPHREYS CJ (1993). INVESTIGATIONS OF STRUCTURE AND DEGRADATION OF CARBON NANOTUBES BY EELS AND HREM. ELECTRON MICROSCOPY AND ANALYSIS 1993. 79-82.
Boothroyd CB, Humphreys CJ (1993). Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscope. Ultramicroscopy. vol. 52, 318-324.
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Inkson BJ, Boothroyd CB, Humphreys CJ(1993). Microstructure of A γ-α<inf>2</inf>-β TiAl alloy containing iron and vanadium. Acta Metallurgica Et Materialia vol. 41, (10) 2867-2876.
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BURGESS WG, SAUNDERS M, BIRD D, BOTTON G, PRESTON AR, HUMPHREYS CJ, ZALUZEC NJ (1993). STRUCTURE FACTOR DETERMINATION BY ZONE-AXIS CBED. ELECTRON MICROSCOPY AND ANALYSIS 1993. 137-140.
BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, CANNARD PJ, DAVIES GJ (1993). THE EFFECT OF GROWTH INTERRUPTS ON CBE GROWN INP. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. 373-376.
BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, PERRIN SD, DAVIES GJ (1993). THE EFFECT OF THE IMAGING ELECTRON-BEAM ON INP/INGAAS MQW STRUCTURES. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. 493-496.
MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S, HUMPHREYS C(1992). ULTIMATE LIMITS OF LITHOGRAPHY. PHYSICS WORLD vol. 5, (11) 28-32.
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Chen GS, Boothroyd CB, Humphreys CJ (1991). Electron beam damage in AlF<inf>3</inf>. Institute of Physics Conference Series. vol. 119, 325-328.
Morgan CJ, Bailey SJ, Preston AR, Humphreys CJ (1991). Electron beam nanolithography of sputtered amorphous Al<inf>2</inf>O<inf>3</inf> and the proximity effect. Institute of Physics Conference Series. vol. 119, 503-506.
Zhou X, Preston AR, Humphreys CJ (1991). TEM study of nitrogen enhanced oxygen precipitation in nitrogen-doped Czochralski-grown silicon. Institute of Physics Conference Series. 211-216.
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HUMPHREYS CJ, MAHER DM, EAGLESHAM DJ, KVAM EP, SALISBURY IG(1991). THE ORIGIN OF DISLOCATIONS IN MULTILAYERS. JOURNAL DE PHYSIQUE III vol. 1, (6) 1119-1130.
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ZHOU X, PRESTON AR, HUMPHREYS CJ (1991). TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON. MICROSCOPY OF SEMICONDUCTING MATERIALS 1991. vol. 117, 211-216.
Zhang JG, McCartney DG, Humphreys CJ(1990). On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-T <inf>c</inf> superconductors. Superconductor Science and Technology vol. 3, (4) 185-190.
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Turner PS, Bullough TJ, Devenish RW, Maherj DM, Humphreys CJ(1990). Nanometre hole formation in Mgo using electron beams. Philosophical Magazine Letters vol. 61, (4) 181-193.
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Kvam EP, Maher DM, Humphreys CJ(1990). Variation of dislocation morphology with strain in Ge<inf>x</inf>Si<inf>1−x</inf> epilayers on (100)Si. Journal of Materials Research vol. 5, (9) 1900-1907.
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Devenish RW, Eaglesham DJ, Maher DM, Humphreys CJ(1989). Nanolithography using field emission and conventional thermionic electron sources. Ultramicroscopy vol. 28, (1-4) 324-329.
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Humphreys CJ(1989). Radiation effects. Ultramicroscopy vol. 28, (1-4) 357-358.
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Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Eaglesham DJ, Maher DM, Bean JC(1989). Dislocation nucleation near the critical thickness in GeSi/Si strained layers. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 59, (5) 1059-1073.
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Eaglesham DJ, Maher DM, Kvam EP, Bean JC, Humphreys CJ(1989). New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers. Physical Review Letters vol. 62, (2) 187-190.
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Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK, Bean JC(1988). X-ray topography of the coherency breakdown in Ge<inf>x</inf>Si <inf>1-x</inf>/Si(100). Applied Physics Letters vol. 53, (21) 2083-2085.
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Huxford NP, Eaglesham DJ, Humphreys CJ(1988). Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>superconductors (Nature (1987) 329, (812-813)). Nature vol. 331, (6153)
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Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ, Godfrey DJ (1988). Plasma anodisation of silicon for advanced VLSI. European Solid-State Device Research Conference. C4393-C4396.
Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S, Ries M(1988). Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity. Angewandte Chemie International Edition in English vol. 27, (7) 927-929.
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Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G, Marchionna M(1987). Analytical electron microscopy of [Ni<inf>38</inf>Pt<inf>6</inf>(CO) <inf>48</inf>H]<sup>5-</sup>. Journal of the Chemical Society, Chemical Communications (10) 765-766.
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Berger SD, Salisbury IG, Milne RH, Imeson D, Humphreys CJ(1987). Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties vol. 55, (3) 341-358.
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Bullock JF, Titchmarsh JM, Humphreys CJ(1986). STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES. Semiconductor Science and Technology vol. 1, (6) 342-345.
Bullock JF, Titchmarsh JM, Humphreys CJ(1986). STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures. Semiconductor Science and Technology vol. 1, (6) 343-345.
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Bullock JF, Humphreys CJ, Mace AJW, Bishop HE, Titchmarsh JM (1985). CRYSTALLINE EFFECTS IN THE ANALYSIS OF SEMICONDUCTOR MATERIALS USING AUGER ELECTRONS OR X-RAYS. Institute of Physics Conference Series. 405-410.
Fraser HL, Maher DM, Humphreys CJ, Hetherington CJD, Knoell RV, Bean JC (1985). DETECTION OF LOCAL STRAINS IN STRAINED LAYER SUPERLATTICES. Institute of Physics Conference Series. 307-312.
Davies RA, Kelly MJ, Kerr TM, Hetherington CJD, Humphreys CJ(1985). Geometric and electronic structure of a semiconductor superlattice. Nature vol. 317, (6036) 418-419.
10.1038/317418a0
Timsit RS, Waddington WG, Humphreys CJ, Hutchison JL(1985). Structure of the Al/Al<inf>2</inf>O<inf>3</inf> interface. Applied Physics Letters vol. 46, (9) 830-832.
10.1063/1.95899
Humphreys CJ(1985). Surface physics: Hopping atoms in crystal growth. Nature vol. 317, (6032)
10.1038/317016a0
Timsit RS, Waddington WG, Humphreys CJ, Hutchison JL(1985). Examination of the Al/Al<inf>2</inf>O<inf>3</inf> interface by high-resolution electron microscopy. Ultramicroscopy vol. 18, (1-4) 387-394.
10.1016/0304-3991(85)90157-3
Humphreys CJ(1984). Crytallography: Defects in reduced oxides. Nature vol. 309, (5966)
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Humphreys CJ(1984). MICRO-84: Electron microscopy 50 years on. Nature vol. 311, (5981)
10.1038/311012a0
Salisbury IG, Timsit RS, Berger SD, Humphreys CJ(1984). Nanometer scale electron beam lithography in inorganic materials. Applied Physics Letters vol. 45, (12) 1289-1291.
10.1063/1.95115
Spence JCH, Humphreys CJ(1984). CHANNELLING RADIATION IN ELECTRON MICROSCOPY. Optik (Jena) vol. 66, (3) 225-242.
Cherns D, Hetherington CJD, Humphreys CJ(1984). The atomic structure of the NiSi<inf>2</inf>-(001)Si interface. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 49, (1) 165-177.
10.1080/01418618408233436
Hetherington CJD, Cherns D, Humphreys CJ (1983). ATOMIC STRUCTURE OF THE NiSi//2/(001) Si INTERFACE. Institute of Physics Conference Series. 89-94.
Humphreys CJ, Waddington WG(1983). Dating the crucifixion. Nature vol. 306, (5945) 743-746.
10.1038/306743a0
Mochel ME, Humphreys CJ, Eades JA, Mochel JM, Petford AM(1983). Electron beam writing on a 20-Å scale in metal β-aluminas. Applied Physics Letters vol. 42, (4) 392-394.
10.1063/1.93918
Humphreys CJ (1983). HIGH VOLTAGE ELECTRON MICROSCOPY - PRESENT ACHIEVEMENTS AND FUTURE PROSPECTS. Lawrence Berkeley Laboratory (Report) LBL. 1-4.
Hull R, Smith DJ, Humphreys CJ(1983). A high‐resolution electron microscopic study of defects in sodium β′″‐alumina. Journal of Microscopy vol. 130, (2) 203-214.
10.1111/j.1365-2818.1983.tb04218.x
Hull R, Petford A, Humphreys C, Smith D(1983). High resolution electron microscopy of silver β- and β″ -aluminas. Solid State Ionics vol. 9-10, (PART 1) 181-186.
10.1016/0167-2738(83)90231-X
Humphreys CJ(1981). Fundamental concepts of stem imaging. Ultramicroscopy vol. 7, (1) 7-12.
10.1016/0304-3991(81)90017-6
Humphreys CJ, Spence JCH(1981). RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. Optik (Jena) vol. 58, (2) 125-142.
Spencer JP, Humphreys CJ(1980). A multiple scattering transport theory for electron. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 42, (4) 433-451.
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SELLAR JR, IMESON D, HUMPHREYS CJ(1980). THE COMBINED CONVERGENT BEAM-CRITICAL VOLTAGE TECHNIQUE IN HIGH-VOLTAGE ELECTRON-MICROSCOPY. MICRON vol. 11, (3-4) 241-242.
10.1016/0047-7206(80)90004-7
Humphreys CJ(1979). The scattering of fast electrons by crystals. Reports on Progress in Physics vol. 42, (11) 1825-1887.
10.1088/0034-4885/42/11/002
Humphreys CJ, Drummond RA, Hart-Davis A, Butler EP(1977). Additional image peaks in the high resolution imaging of dislocations. Philosophical Magazine vol. 35, (6) 1543-1555.
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Humphreys CJ, Drummond RA (1977). HIGH RESOLUTION IMAGING OF DEFECTS. Inst Phys Conf Ser. 241-246.
Rez P, Humphreys CJ, Whelan MJ(1977). The distribution of intensity in electron diifraction patterns due to phonon scattering. Philosophical Magazine vol. 35, (1) 81-96.
10.1080/14786437708235974
Rez P, Humphreys CJ, Whelan MJ (1976). DISTRIBUTION OF PHONON SCATTERED ELECTRONS IN HIGH ENERGY ELECTRON DIFFRACTION PATTERNS. 373-376.
Humphreys CJ, Hart-Davis A (1976). SPURIOUS PEAKS IN WEAK-BEAM IMAGES. 409-412.
Rolf Sandström, Spencer JF, Humphreys CJ(1974). A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy. Journal of Physics D: Applied Physics vol. 7, (7) 1030-1046.
10.1088/0022-3727/7/7/310
Spencer JP, Booker GR, Humphreys CJ, Joy DC (1974). ELECTRON CHANNELLING PATTERNS FROM DEFORMED CRYSTALS. 919-925.
Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R et al.(1973). SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972.
Spencer JP, Humphreys CJ, Hirsch PB(1972). A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons. Philosophical Magazine vol. 26, (1) 193-213.
10.1080/14786437208221029
Lally JS, Humphreys CJ, Metherell AJF, Fisher RM(1972). The critical voltage effect in high voltage electron microscopy. Philosophical Magazine vol. 25, (2) 321-343.
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Humphreys CJ(1972). The optimum voltage in very high voltage electron microscopy. Philosophical Magazine vol. 25, (6) 1459-1472.
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Humphreys CJ, Thomas LE, Lally JS, Fisher RM(1971). Maximizing the penetration in high voltage electron microscopy. Philosophical Magazine vol. 23, (181) 87-114.
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Humphreys CJ, Lally JS(1970). Aspects of Bloch-wave channeling in high-voltage electron microscopy. Journal of Applied Physics vol. 41, (1) 232-235.
10.1063/1.1658326
Tanner BK, Humphreys CJ(1970). High resolution divergent-beam X-ray topography. Journal of Physics D: Applied Physics vol. 3, (7) 1144-1146.
10.1088/0022-3727/3/7/421
Thomas LE, Humphreys CJ(1970). Kikuchi patterns in a high voltage electron microscope. physica status solidi (a) vol. 3, (3) 599-615.
10.1002/pssa.19700030306
Humphreys CJ, Whelan MJ(1969). Inelastic scattering of fast electrons by crystals. Philosophical Magazine vol. 20, (163) 165-172.
10.1080/14786436908228543
Humphreys CJ, Hirsch PB(1968). Absorption parameters in electron diffraction theory. Philosophical Magazine vol. 18, (151) 115-122.
10.1080/14786436808227313
Humphreys CJ, Howie A, Booker GR(1967). Some electron diffraction contrast effects at planar defects in crystals. Philosophical Magazine vol. 15, (135) 507-522.
10.1080/14786436708220898
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