Publications:  Dr Jan Mol

Sowa JK, Mol JA, Briggs GAD, Gauger EM(2020). Erratum: Beyond Marcus theory and the Landauer-Büttiker approach in molecular junctions: A unified framework (Journal of Chemical Physics (2018)(149) (154112) DOI: 10.1063/1.5049537). Journal of Chemical Physics vol. 152, (9)

Fried JP, Bian X, Swett JL, Kravchenko II, Briggs GAD, Mol JA(2020). Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors. Nanoscale vol. 12, (2) 871-876.

Thomas JO, Limburg B, Sowa JK, Willick K, Baugh J, Briggs GAD, Gauger EM, Anderson HL et al.(2019). Understanding resonant charge transport through weakly coupled single-molecule junctions. Nature Communications vol. 10, (1)

Limburg B, Thomas JO, Sowa JK, Willick K, Baugh J, Gauger EM, Briggs GAD, Mol JA et al.(2019). Charge-state assignment of nanoscale single-electron transistors from their current-voltage characteristics. Nanoscale vol. 11, (31) 14820-14827.

Sowa JK, Mol JA, Gauger EM(2019). Marcus Theory of Thermoelectricity in Molecular Junctions. Journal of Physical Chemistry C vol. 123, (7) 4103-4108.

Schupp FJ, Mirza MM, MacLaren DA, Briggs GAD, Paul DJ, Mol JA(2018). Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors. Physical Review B vol. 98, (23)

Harzheim A, Spiece J, Evangeli C, McCann E, Falko V, Sheng Y, Warner JH, Briggs GAD et al.(2018). Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictions. Nano Letters vol. 18, (12) 7719-7725.

Sowa JK, Mol JA, Briggs GAD, Gauger EM(2018). Beyond Marcus theory and the Landauer-Büttiker approach in molecular junctions: A unified framework. J Chem Phys vol. 149, (15) 154112-154112.

Puczkarski P, Wu Q, Sadeghi H, Hou S, Karimi A, Sheng Y, Warner JH, Lambert CJ et al.(2018). Low-Frequency Noise in Graphene Tunnel Junctions. ACS Nano vol. 12, (9) 9451-9460.

Limburg B, Thomas JO, Holloway G, Sadeghi H, Sangtarash S, Hou ICY, Cremers J, Narita A et al.(2018). Anchor Groups for Graphene-Porphyrin Single-Molecule Transistors. Advanced Functional Materials vol. 28, (45)

Fried JP, Swett JL, Bian X, Mol JA(2018). Challenges in fabricating graphene nanodevices for electronic DNA sequencing. MRS Communications vol. 8, (3) 703-711.

Sowa JK, Mol JA, Briggs GAD, Gauger EM(2018). Spiro-Conjugated Molecular Junctions: Between Jahn-Teller Distortion and Destructive Quantum Interference. Journal of Physical Chemistry Letters vol. 9, (8) 1859-1865.

Mirza MM, Schupp FJ, Mol JA, MacLaren DA, Briggs GAD, Paul DJ(2017). One dimensional transport in silicon nanowire junction-less field effect transistors. Scientific Reports vol. 7, (1)

Gehring P, Harzheim A, Spièce J, Sheng Y, Rogers G, Evangeli C, Mishra A, Robinson BJ et al.(2017). Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices. Nano Letters vol. 17, (11) 7055-7061.

Sowa JK, Mol JA, Briggs GAD, Gauger EM(2017). Environment-assisted quantum transport through single-molecule junctions. Physical Chemistry Chemical Physics vol. 19, (43) 29534-29539.

Li Y, Holloway GW, Benjamin SC, Briggs GAD, Baugh J, Mol JA(2017). Double quantum dot memristor. Physical Review B vol. 96, (7)

Puczkarski P, Swett JL, Mol JA(2017). Graphene nanoelectrodes for biomolecular sensing. Journal of Materials Research vol. 32, (15) 3002-3010.

Sarwat SG, Gehring P, Rodriguez Hernandez G, Warner JH, Briggs GAD, Mol JA, Bhaskaran H(2017). Scaling Limits of Graphene Nanoelectrodes. Nano Lett vol. 17, (6) 3688-3693.

Gehring P, Sowa JK, Cremers J, Wu Q, Sadeghi H, Sheng Y, Warner JH, Lambert CJ et al.(2017). Distinguishing Lead and Molecule States in Graphene-Based Single-Electron Transistors. ACS Nano vol. 11, (6) 5325-5331.

Sowa JK, Mol JA, Briggs GAD, Gauger EM(2017). Vibrational effects in charge transport through a molecular double quantum dot. Physical Review B vol. 95, (8)

Li Y, Mol JA, Benjamin SC, Briggs GAD(2016). Interference-based molecular transistors. Scientific Reports vol. 6,

Gehring P, Sadeghi H, Sangtarash S, Lau CS, Liu J, Ardavan A, Warner JH, Lambert CJ et al.(2016). Quantum Interference in Graphene Nanoconstrictions. Nano Letters vol. 16, (7) 4210-4216.

Salfi J, Mol JA, Culcer D, Rogge S(2016). Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. Phys Rev Lett vol. 116, (24) 246801-246801.

Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S(2016). Quantum simulation of the Hubbard model with dopant atoms in silicon. Nature Communications vol. 7,

Lau CS, Sadeghi H, Rogers G, Sangtarash S, Dallas P, Porfyrakis K, Warner J, Lambert CJ et al.(2016). Redox-Dependent Franck-Condon Blockade and Avalanche Transport in a Graphene-Fullerene Single-Molecule Transistor. Nano Letters vol. 16, (1) 170-176.

Van Der Heijden J, Salfi J, Mol JA, Verduijn J, Tettamanzi GC, Hamilton AR, Collaert N, Rogge S (2015). Probing a single acceptor in a silicon nanotransistor. 2014 Silicon Nanoelectronics Workshop, SNW 2014.

Puczkarski P, Gehring P, Lau CS, Liu J, Ardavan A, Warner JH, Briggs GAD, Mol JA(2015). Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning. Applied Physics Letters vol. 107, (13)

Mol JA, Salfi J, Rahman R, Hsueh Y, Miwa JA, Klimeck G, Simmons MY, Rogge S(2015). Interface-induced heavy-hole/light-hole splitting of acceptors in silicon. Applied Physics Letters vol. 106, (20)

Sadeghi H, Mol JA, Lau CS, Briggs GAD, Warner J, Lambert CJ(2015). Conductance enlargement in picoscale electroburnt graphene nanojunctions. Proceedings of the National Academy of Sciences of the United States of America vol. 112, (9) 2658-2663.

Mol JA, Lau CS, Lewis WJM, Sadeghi H, Roche C, Cnossen A, Warner JH, Lambert CJ et al.(2015). Graphene-porphyrin single-molecule transistors. Nanoscale vol. 7, (31) 13181-13185.

Lau CS, Mol JA, Warner JH, Briggs GAD(2014). Nanoscale control of graphene electrodes. Physical Chemistry Chemical Physics vol. 16, (38) 20398-20401.

Zemen J, Mašek J, Ku¿era J, Mol JA, Motloch P, Jungwirth T(2014). Comparative study of tight-binding and ab initio electronic structure calculations focused on magnetic anisotropy in ordered CoPt alloy. Journal of Magnetism and Magnetic Materials vol. 356, 87-94.

Van Der Heijden J, Salfi J, Mol JA, Verduijn J, Tettamanzi GC, Hamilton AR, Collaert N, Rogge S(2014). Probing the spin states of a single acceptor atom. Nano Letters vol. 14, (3) 1492-1496.

Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S(2014). Spatially resolving valley quantum interference of a donor in silicon. Nature Materials vol. 13, (6) 605-610.

Miwa JA, Mol JA, Salfi J, Rogge S, Simmons MY(2013). Transport through a single donor in p-type silicon. Applied Physics Letters vol. 103, (4)

Mol JA, Salfi J, Miwa JA, Simmons MY, Rogge S(2013). Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants. Physical Review B - Condensed Matter and Materials Physics vol. 87, (24)

Mol JA, Roggea S(2013). Circuits with single-atom devices. Single-Atom Nanoelectronics,

Fresch B, Verduijn J, Mol JA, Rogge S, Remacle F(2012). Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor. EPL vol. 99, (2)

Mol JA, Van Der Heijden J, Verduijn J, Klein M, Remacle F, Rogge S(2011). Balanced ternary addition using a gated silicon nanowire. Applied Physics Letters vol. 99, (26)

Mol JA, Verduijn J, Levine RD, Remacle F, Rogge S(2011). Integrated logic circuits using single-atom transistors. Proceedings of the National Academy of Sciences of the United States of America vol. 108, (34) 13969-13972.

Yan Y, Mol JA, Verduijn J, Rogge S, Levine RD, Remacle F(2010). Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full adder logic. Journal of Physical Chemistry C vol. 114, (48) 20380-20386.

Johnson BC, Tettamanzi GC, Yang C, Alves ADC, Van Donkelaar J, Thompson S, Verduijn J, Mol JA et al. (2010). Single ion implantation into Si-based devices. ECS Transactions. vol. 33, 179-189.

Johnson BC, Tettamanzi GC, Alves ADC, Thompson S, Yang C, Verduijn J, Mol JA, Wacquez R et al.(2010). Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation. Applied Physics Letters vol. 96, (26)

Mol JA, Beentjes SPC, Rogge S(2010). A low temperature surface preparation method for STM nano-lithography on Si(1 0 0). Applied Surface Science vol. 256, (16) 5042-5045.

Klein M, Mol JA, Verduijn J, Lansbergen GP, Rogge S, Levine RD, Remacle F(2010). Ternary logic implemented on a single dopant atom field effect silicon transistor. Applied Physics Letters vol. 96, (4)

Klein M, Lansbergen GP, Mol JA, Rogge S, Levine RD, Remacle F(2009). Reconfigurable logic devices on a single dopant atom - Operation up to a full adder by using electrical spectroscopy. ChemPhysChem vol. 10, (1) 162-173.

Li Z, Mol JA, Lagae L, Borghs G, Mertens R, Van Roy W(2008). Pulsed field induced magnetization switching in (Ga,Mn)As. Applied Physics Letters vol. 92, (11)