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Research

Publications: Prosir Colin Humphreys

Humphreys C ( 2022 ) . From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene . Microscopy and Microanalysis vol. 28 , ( S1 ) 2736 - 2737 .
Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ, Humphreys CJ ( 2022 ) . Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene . Physical Review B vol. 105 , ( 16 )
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP ( 2022 ) . Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022) . Advanced Optical Materials vol. 10 , ( 3 ) 2270012 - 2270012 .
Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ, Dunstan DJ ( 2022 ) . Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials . Physical Review B vol. 105 , ( 2 ) Article 024103 ,
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP ( 2021 ) . Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes . Advanced Optical Materials2101675 - 2101675 .
Pristovsek M, Frentrup M, Zhu T, Kusch G, Humphreys CJ ( 2021 ) . X-ray characterisation of the basal stacking fault densities of (112̄2) GaN . CrystEngComm vol. 23 , ( 35 ) 6059 - 6069 .
Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C et al. ( 2021 ) . Mechanical Properties of Graphene . Applied Physics Reviews
Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ, Humphreys CJ ( 2021 ) . Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)] . Physical Review B vol. 103 , ( 11 ) 119901 - 119901 .
Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ, Humphreys CJ ( 2020 ) . Graphene on silicon: effects of the silicon surface orientation on the work function and carrier density of graphene .
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG et al. ( 2020 ) . Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites . Scientific Reports vol. 10 , Article 15618 ,
Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM et al. ( 2020 ) . Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films . ACS Nano
Niranjan S, Guiney I, Humphreys CJ, Sen P, Muralidharan R, Nath DN ( 2020 ) . Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme . Journal of Vacuum Science and Technology B vol. 38 , ( 3 )
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN ( 2020 ) . A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias . Physica Status Solidi (A) Applications and Materials Science vol. 217 , ( 7 )
Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D, Humphreys C ( 2020 ) . Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers . Physical Review B: Condensed Matter and Materials Physics vol. 101 , Article 125421 ,
Griffiths JT, Wisnivesky Rocca Rivarola F, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY et al. ( 2019 ) . Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals . ACS Applied Energy Materials vol. 2 , ( 10 ) 6998 - 7004 .
Zhou B, Das A, Kappers M, Oliver R, Humphreys C, Krause S ( 2019 ) . InGaN as a substrate for AC photoelectrochemical imaging . Sensors
Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ, Humphreys C ( 2019 ) . 3D strain in 2D materials: to what extent is monolayer graphene graphite? . Physical Review Letters vol. 123 , 135501 - 135501 .
Tang F, Zhu T, Fu WY, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL et al. ( 2019 ) . Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates . Journal of Applied Physics vol. 125 , ( 22 )
Massabuau FCP, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G et al. ( 2019 ) . Optical and structural properties of dislocations in InGaN . Journal of Applied Physics vol. 125 , ( 16 )
Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA, Dawson P ( 2019 ) . Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength . JAPANESE JOURNAL OF APPLIED PHYSICS vol. 58 , Article ARTN SCCB09 ,
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ, Dunstan DJ ( 2019 ) . Effect of humidity on the interlayer interaction of bilayer graphene . Physical Review B vol. 99 , ( 4 )
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R et al. ( 2019 ) . Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model . IEEE Transactions on Electron Devices vol. 66 , ( 1 ) 613 - 618 .
Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ, Humphreys CJ ( 2018 ) . Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells . ACS Photonics vol. 5 , ( 11 ) 4437 - 4446 .
Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA, Humphreys CJ ( 2018 ) . What is red? on the chromaticity of orange-red InGaN/GaN based LEDs . Journal of Applied Physics vol. 124 , ( 18 )
Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA, Dawson P ( 2018 ) . Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities . Physical Review B vol. 98 , ( 15 )
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ, Dunstan DJ ( 2018 ) . The Effect of Humidity on the Interlayer Interaction of Bi-layer Graphene .
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R, Dawson P ( 2018 ) . Effects of a Si-doped InGaN underlayer on the optical properties of InGaN/GaN quantum well structures with different numbers of quantum wells . Materials vol. 11 , ( 9 )
Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ, Wallis DJ ( 2018 ) . Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN . Journal of Applied Physics vol. 124 , ( 10 )
Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ et al. ( 2018 ) . Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers . Journal of Applied Physics vol. 124 , ( 5 )
Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ et al. ( 2018 ) . Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs . Microscopy and Microanalysis vol. 24 , ( S1 ) 4 - 5 .
Humphreys C, Waddington G ( 2018 ) . Response to letter from Wayne Osborn . Astronomy and Geophysics vol. 59 , ( 4 )
Cho SJ, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C, Thayne IG ( 2018 ) . Impact of stress in ICP-CVD SiN<inf>x</inf> passivation films on the leakage current in AlGaN/GaN HEMTs . Electronics Letters vol. 54 , ( 15 ) 947 - 949 .
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M et al. ( 2018 ) . Effect of stacking faults on the photoluminescence spectrum of zincblende GaN . Journal of Applied Physics vol. 123 , ( 18 )
Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P et al. ( 2018 ) . Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs . Journal of Applied Physics vol. 123 , ( 18 )
Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ, Dawson P ( 2018 ) . Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures . Journal of Physics Condensed Matter vol. 30 , ( 17 )
Humphreys C, Waddington G ( 2018 ) . Illuminating theory on early solar eclipse . Astronomy and Geophysics vol. 59 , ( 1 )
Nixon D, Humphreys C, Waddington G ( 2018 ) . Moon village: show us the money . Astronomy & Geophysics vol. 59 , ( 1 ) 1.8 - 1.8 .
Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL et al. ( 2018 ) . Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors . Journal of Applied Physics vol. 123 , ( 2 )
Massabuau FC, Chen P, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ et al. ( 2018 ) . Alloy fluctuations at dislocations in III-nitrides: Identification and impact on optical properties . Proceedings of SPIE - The International Society for Optical Engineering . vol. 10532 ,
Kazemian P, Schönjahn C, Humphreys CJ ( 2018 ) . Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope . Microscopy of Semiconducting Materials 2003 ,
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA, Humphreys CJ ( 2017 ) . The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes . Journal of Applied Physics vol. 122 , ( 23 )
Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN ( 2017 ) . Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon with Carbon-Doped Buffer . IEEE Transactions on Electron Devices vol. 64 , ( 12 ) 4868 - 4874 .
Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ et al. ( 2017 ) . All-GaN-Integrated Cascode Heterojunction Field Effect Transistors . IEEE Transactions on Power Electronics vol. 32 , ( 11 ) 8743 - 8750 .
Humphreys C, Waddington G ( 2017 ) . Solar eclipse of 1207 BC helps to date pharaohs . Astronomy and Geophysics vol. 58 , ( 5 ) 5.39 - 5.42 .
Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ, Johnson PA ( 2017 ) . Machine Learning Predicts Laboratory Earthquakes . Geophysical Research Letters vol. 44 , ( 18 ) 9276 - 9282 .
Frentrup M, Lee LY, Sahonta SL, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ et al. ( 2017 ) . X-ray diffraction analysis of cubic zincblende III-nitrides . Journal of Physics D: Applied Physics vol. 50 , ( 43 )
Eblabla A, Benakaprasad B, Xu L, Wallis DJ, Guiney I, Humphreys C, Elgaid K ( 2017 ) . Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC) . Proceedings International Radar Symposium .
Massabuau FCP, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE et al. ( 2017 ) . Dislocations in AlGaN: Core structure, atom segregation, and optical properties . Nano Letters vol. 17 , ( 8 ) 4846 - 4852 .
Floros K, Li X, Guiney I, Cho SJ, Hemakumara D, Wallis DJ, Wasige E, Moran DAJ et al. ( 2017 ) . Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks . Physica Status Solidi (A) Applications and Materials Science . vol. 214 ,
Massabuau F, Kappers M, Humphreys C, Oliver R ( 2017 ) . Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth . Physica Status Solidi (B) Basic Research . vol. 254 ,
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Sahonta SL, Frentrup M, Nilsson D, Ward PJ et al. ( 2017 ) . Photoluminescence studies of cubic GaN epilayers . Physica Status Solidi (B) Basic Research . vol. 254 ,
Massabuau F, Piot N, Frentrup M, Wang X, Avenas Q, Kappers M, Humphreys C, Oliver R ( 2017 ) . X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface . Physica Status Solidi (B) Basic Research . vol. 254 ,
Rouet-Leduc B, Hulbert C, Barros K, Lookman T, Humphreys CJ ( 2017 ) . Automatized convergence of optoelectronic simulations using active machine learning . Applied Physics Letters vol. 111 , ( 4 )
Xiu H, Thrush EJ, Zhao L, Phillips A, Humphreys CJ ( 2017 ) . Degradation of InGaN/GaN laser diodes investigated by cross-sectional electron beam induced current imaging . 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017 . vol. 2018-January , 38 - 44 .
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL et al. ( 2017 ) . The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem . Ultramicroscopy vol. 176 , 93 - 98 .
Griffiths JT, Ren CX, Coulon PM, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I et al. ( 2017 ) . Structural impact on the nanoscale optical properties of InGaN core-shell nanorods . Applied Physics Letters vol. 110 , ( 17 )
Coulon PM, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ et al. ( 2017 ) . Evolution of the m-Plane quantum well morphology and composition within a GaN/InGaN core-shell structure . Crystal Growth and Design vol. 17 , ( 2 ) 474 - 482 .
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ et al. ( 2017 ) . Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth . Journal of Crystal Growth vol. 459 , 185 - 188 .
Kim JY, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke NJ et al. ( 2017 ) . Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001) . Journal of Applied Physics vol. 121 , ( 4 )
Massabuau FCP, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ et al. ( 2017 ) . Carrier localization in the vicinity of dislocations in InGaN . Journal of Applied Physics vol. 121 , ( 1 )
Humphreys C ( 2017 ) . Ahmed zewail - a towering visionary . Personal And Scientific Reminiscences: Tributes To Ahmed Zewail ,
Smeeton T, Humphreys C ( 2017 ) . Perspectives on electronic and photonic materials . Springer Handbooks ,
Humphreys CJ ( 2017 ) . Preventing cracking in the growth of low-cost GaN LEDs on large-area Si . ICF 2017 - 14th International Conference on Fracture . vol. 2 , 1280 - 1282 .
Guiney I, Thomas S, Humphreys CJ ( 2017 ) . Single-step manufacturing process for the production of graphene-V/III LED heterostructures . Proceedings of SPIE - The International Society for Optical Engineering . vol. 10124 ,
Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D et al. ( 2016 ) . Impact of high energy electrons on nitrides for nanocathodoluminescence . European Microscopy Congress 2016: Proceedings ,
Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I et al. ( 2016 ) . Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping . European Microscopy Congress 2016: Proceedings ,
Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT ( 2016 ) . Growth of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1−x</inf>N layers by molecular beam epitaxy using a highly efficient RF plasma source . Journal of Crystal Growth vol. 456 , 151 - 154 .
Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ et al. ( 2016 ) . Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence . Applied Physics Letters vol. 109 , ( 23 )
Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ et al. ( 2016 ) . Dielectric response of wurtzite gallium nitride in the terahertz frequency range . Solid State Communications vol. 247 , 68 - 71 .
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. ( 2016 ) . Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure . International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz . vol. 2016-November ,
Benakaprasad B, Eblabla A, Li X, Thayne I, Wallis DJ, Guiney I, Humphreys C, Elgaid K ( 2016 ) . Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates . International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz . vol. 2016-November ,
Schulz S, Tanner DSP, O'Reilly EP, Caro MA, Tang F, Griffiths JT, Oehler F, Kappers MJ et al. ( 2016 ) . Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m -plane InGaN/GaN quantum wells . Applied Physics Letters vol. 109 , ( 22 )
Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ et al. ( 2016 ) . A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates . Sci Technol Adv Mater vol. 17 , ( 1 ) 736 - 743 .
Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D et al. ( 2016 ) . Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold . Journal of Applied Physics vol. 120 , ( 16 )
Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M, Lee KB, Zaidi Z et al. ( 2016 ) . Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs . IEEE International Reliability Physics Symposium Proceedings . vol. 2016-September , 4A41 - 4A45 .
Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ et al. ( 2016 ) . Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence . Journal of Applied Physics vol. 120 , ( 8 )
Muhammed MM, Roldan MA, Yamashita Y, Sahonta SL, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ et al. ( 2016 ) . High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga<inf>2</inf>O<inf>3</inf> using a GaN buffer layer . Scientific Reports vol. 6 ,
Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D et al. ( 2016 ) . Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120) . Semiconductor Science and Technology vol. 31 , ( 8 )
Presa S, Maaskant PP, Kappers MJ, Humphreys CJ, Corbett B ( 2016 ) . Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes . AIP Advances vol. 6 , ( 7 )
Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ, Oliver RA ( 2016 ) . Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells . Applied Physics Letters vol. 108 , ( 25 )
Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F, Meyer T ( 2016 ) . Scalable semipolar gallium nitride templates for high-speed LEDs . SPIE Newsroom
Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. ( 2016 ) . Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique . Applied Physics Letters vol. 108 , ( 21 )
Dawson P, Schulz S, Oliver RA, Kappers MJ, Humphreys CJ ( 2016 ) . The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells . Journal of Applied Physics vol. 119 , ( 18 )
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S et al. ( 2016 ) . Characterization of p-GaN<inf>1-x</inf>As<inf>x</inf>/n-GaN PN junction diodes . Semiconductor Science and Technology vol. 31 , ( 6 )
Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C et al. ( 2016 ) . The microstructure of non-polar a-plane (11 2 0) InGaN quantum wells . Journal of Applied Physics vol. 119 , ( 17 )
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C ( 2016 ) . Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016) . physica status solidi (b) vol. 253 , ( 5 ) 1024 - 1024 .
Pristovsek M, Humphreys CJ, Bauer S, Knab M, Thonke K, Kozlowski G, O'Mahony D, Maaskant P et al. ( 2016 ) . Comparative study of (0001) and (11-22) InGaN based light emitting diodes . Japanese Journal of Applied Physics . vol. 55 ,
Hammersley S, Kappers MJ, Massabuau FCP, Sahonta SL, Dawson P, Oliver RA, Humphreys CJ ( 2016 ) . Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 13 , 209 - 213 .
Hammersley S, Dawson P, Kappers MJ, Massabuau FCP, Frentrup M, Oliver RA, Humphreys CJ ( 2016 ) . Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 13 , 262 - 265 .
Dunn A, Spencer BF, Hardman SJO, Graham DM, Hammersley S, Davies MJ, Dawson P, Kappers MJ et al. ( 2016 ) . Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 13 , 252 - 255 .
Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT ( 2016 ) . Molecular beam epitaxy of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers using a highly efficient RF plasma source . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 13 , 217 - 220 .
Christian GM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Massabuau FCP, Oliver RA, Humphreys CJ ( 2016 ) . Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 13 , 248 - 251 .
Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S et al. ( 2016 ) . Subthreshold mobility in AlGaN/GaN HEMTs . IEEE Transactions on Electron Devices vol. 63 , ( 5 ) 1861 - 1865 .
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C ( 2016 ) . Toward defect-free semi-polar GaN templates on pre-structured sapphire . Physica Status Solidi (B) Basic Research vol. 253 , ( 5 ) 834 - 839 .
Rouet-Leduc B, Barros K, Lookman T, Humphreys CJ ( 2016 ) . Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning . Scientific Reports vol. 6 ,
Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F et al. ( 2016 ) . Influence of trench period and depth on MOVPE grown (1122) GaN on patterned r-plane sapphire substrates . Journal of Crystal Growth vol. 440 , 69 - 75 .
Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA, Humphreys CJ ( 2016 ) . Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures . physica status solidi (c)
Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon PM, Cherns D, Martin RW et al. ( 2016 ) . Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods . Crystal Growth and Design vol. 16 , ( 4 ) 1907 - 1916 .
Rhode SL, Horton MK, Sahonta SL, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ et al. ( 2016 ) . Dislocation core structures in (0001) InGaN . Journal of Applied Physics vol. 119 , ( 10 )
Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D et al. ( 2016 ) . Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al<inf>2</inf>O<inf>3</inf> gate dielectrics . Applied Physics Letters vol. 108 , ( 7 )
Davies MJ, Hammersley S, Massabuau FCP, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ ( 2016 ) . A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers . Journal of Applied Physics vol. 119 , ( 5 )
Han Y, Zhu D, Zhu T, Humphreys CJ, Wallis DJ ( 2016 ) . Origins of hillock defects on GaN templates grown on Si(111) . Journal of Crystal Growth vol. 434 , 123 - 127 .
Corbett B, Quan Z, Dinh DV, Kozlowski G, O'Mahony D, Akhter M, Schulz S, Parbrook P et al. ( 2016 ) . Development of semipolar (11-22) LEDs on GaN templates . Proceedings of SPIE - The International Society for Optical Engineering . vol. 9768 ,
Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K, Scholz F ( 2016 ) . Growth and coalescence studies of (1122) oriented GaN on pre-structured sapphire substrates using marker layers . Physica Status Solidi (B) Basic Research vol. 253 , ( 1 ) 46 - 53 .
Gîrgel I, Edwards PR, Le Boulbar E, Coulon PM, Sahonta SL, Allsopp DWE, Martin RW, Humphreys CJ et al. ( 2016 ) . Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core-shell light-emitting diodes . Journal of Nanophotonics . vol. 10 ,
Miaja PF, Jiang S, Lee KB, Guiney I, Wallis DJ, Humphreys CJ, Houston PA, Forsyth AJ ( 2016 ) . Modelling the closely-coupled cascode switching process . ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings .
Kakanakova-Georgieva A, Sahonta SL, Nilsson D, Trinh XT, Son NT, Janzén E, Humphreys CJ ( 2016 ) . N-Type conductivity bound by the growth temperature: The case of Al<inf>0.72</inf>Ga<inf>0.28</inf>N highly doped by silicon . Journal of Materials Chemistry C vol. 4 , ( 35 ) 8291 - 8296 .
Pristovsek M, Frentrup M, Han Y, Humphreys CJ ( 2016 ) . Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire . Physica Status Solidi (B) Basic Research vol. 253 , ( 1 ) 61 - 66 .
Zhu D, Humphreys CJ ( 2016 ) . Solid-state lighting based on light emitting diode technology . Optics in Our Time ,
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. ( 2016 ) . Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure . Optics InfoBase Conference Papers .
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Hammersley S, Badcock TJ, Watson-Parris D, Godfrey MJ, Dawson P, Kappers MJ, Humphreys CJ ( 2011 ) . Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 8 , 2194 - 2196 .
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ, Humphreys CJ ( 2011 ) . The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates . Physica Status Solidi (A) Applications and Materials Science vol. 208 , ( 7 ) 1529 - 1531 .
Fu WY, Kappers MJ, Zhang Y, Humphreys CJ, Moram MA ( 2011 ) . Dislocation climb in c-plane ALN films . Applied Physics Express vol. 4 , ( 6 )
Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH, Humphreys CJ ( 2011 ) . Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys . Physical Review B - Condensed Matter and Materials Physics vol. 83 , ( 16 )
Moram MA, Kappers MJ, Massabuau F, Oliver RA, Humphreys CJ ( 2011 ) . The effects of Si doping on dislocation movement and tensile stress in GaN films . Journal of Applied Physics vol. 109 , ( 7 )
Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ, Humphreys CJ ( 2011 ) . Carrier localization mechanisms in In<inf>x</inf>Ga<inf>1-x</inf>N/GaN quantum wells . Physical Review B - Condensed Matter and Materials Physics vol. 83 , ( 11 )
Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA ( 2011 ) . Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice . Ultramicroscopy vol. 111 , ( 3 ) 207 - 211 .
Chee AKW, Broom RF, Humphreys CJ, Bosch EGT ( 2011 ) . A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations . Journal of Applied Physics vol. 109 , ( 1 )
Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ et al. ( 2011 ) . Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope . Journal of Physics: Conference Series . vol. 326 ,
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P et al. ( 2011 ) . Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates . Journal of Applied Physics vol. 109 , ( 1 )
Zhu D, Humphreys CJ ( 2011 ) . Lighting . Fundamentals of Materials for Energy and Environmental Sustainability ,
Petrov M, Holec D, Lymperakis L, Neugebauer J, Humphreys CJ ( 2011 ) . Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite A1N and Al<inf>x</inf>Ga<inf>1-x</inf>N . Journal of Physics: Conference Series . vol. 326 ,
Humphreys CJ ( 2011 ) . The Mystery of the last supper: Reconstructing the final days of Jesus .
Moram MA, Sadler TC, Häberlen M, Kappers MJ, Humphreys CJ ( 2010 ) . Dislocation movement in GaN films . Applied Physics Letters vol. 97 , ( 26 )
Radtke G, Couillard M, Botton GA, Zhu D, Humphreys CJ ( 2010 ) . Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy . Applied Physics Letters vol. 97 , ( 25 )
Chang TY, Moram MA, McAleese C, Kappers MJ, Humphreys CJ ( 2010 ) . Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm . Journal of Applied Physics vol. 108 , ( 12 )
Hao R, Zhu T, Hberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ, Moram MA ( 2010 ) . The effects of annealing on non-polar (1 1 2̄ 0) a-plane GaN films . Journal of Crystal Growth vol. 312 , ( 23 ) 3536 - 3543 .
Kurniawan O, Tan CC, Ong VKS, Li E, Humphreys CJ ( 2010 ) . A direct method for charge collection probability computation using the reciprocity theorem . IEEE Transactions on Electron Devices vol. 57 , ( 10 ) 2455 - 2461 .
Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ, O'Reilly EP ( 2010 ) . Electronic and optical properties of nonpolar a-plane GaN quantum wells . Physical Review B - Condensed Matter and Materials Physics vol. 82 , ( 12 )
Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A, Humphreys CJ ( 2010 ) . Microstructural origins of localization in InGaN quantum wells . Journal of Physics D: Applied Physics vol. 43 , ( 35 )
Badcock TJ, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P ( 2010 ) . Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 1894 - 1896 .
Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O'Reilly EP, Humphreys CJ ( 2010 ) . Characterising the degree of polarisation anisotropy in an a-plane GaN film . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 1897 - 1899 .
Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ, Oliver RA ( 2010 ) . Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a-plane GaN . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 2088 - 2090 .
Watson-Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ, Humphreys CJ ( 2010 ) . Energy landscape and carrier wave-functions in InGaN/GaN quantum wells . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 2255 - 2258 .
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P et al. ( 2010 ) . InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 2168 - 2170 .
Collins DP, Holmes MJ, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ ( 2010 ) . Q-factor measurements on planar nitride cavities . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 1866 - 1868 .
Rodenburg C, Jepson MAE, Inkson BJ, Bosch EGT, Humphreys CJ ( 2010 ) . Energy filtered scanning electron microscopy: Applications to characterisation of semiconductors . Journal of Physics: Conference Series . vol. 241 ,
Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA ( 2010 ) . Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth . Journal of Applied Physics vol. 108 , ( 3 )
Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M, Spence JCH ( 2010 ) . Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN . Acta Crystallographica Section A: Foundations of Crystallography vol. 66 , ( 4 ) 446 - 450 .
Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ ( 2010 ) . Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer . Physica Status Solidi (B) Basic Research . vol. 247 , 1753 - 1756 .
Humphreys C, Oliver R, Kappers M, Bennett, Parris D, Dawson P, Godfrey M, Clifton P et al. ( 2010 ) . Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices . Microscopy and Microanalysis vol. 16 , ( S2 ) 1890 - 1891 .
Bennett SE, Holec D, Kappers MJ, Humphreys CJ, Oliver RA ( 2010 ) . Imaging dislocations in gallium nitride across broad areas using atomic force microscopy . Review of Scientific Instruments vol. 81 , ( 6 )
Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ, Humphreys CJ ( 2010 ) . Cavity Enhancement of single quantum dot emission in the blue . Nanoscale Research Letters vol. 5 , ( 3 ) 608 - 612 .
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2010 ) . Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy . Journal of Physics D: Applied Physics vol. 43 , ( 5 )
Rodenburg C, Jepson MAE, Inkson BJ, Bosch E, Chee AKW, Humphreys CJ ( 2010 ) . Energy filtered scanning electron microscopy: Applications to dopant contrast . Journal of Physics Conference Series . vol. 209 ,
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Ashraf H, Sridhara Rao DV, Gogova D, Siche D, Fornari R, Humphreys CJ, Hageman PR ( 2010 ) . Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiN<inf>x</inf> treatment . Journal of Crystal Growth vol. 312 , ( 4 ) 595 - 600 .
Kappers MJ, Moram MA, Sridhara Rao DV, McAleese C, Humphreys CJ ( 2010 ) . Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire . Journal of Crystal Growth vol. 312 , ( 3 ) 363 - 367 .
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA ( 2010 ) . Atom probe extended to AlGaN: Three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 1781 - 1783 .
Liu LZY, Sridhara Rao DV, Kappers MJ, Humphreys CJ, Geiger D ( 2010 ) . Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography . Journal of Physics: Conference Series . vol. 209 ,
Haeberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ ( 2010 ) . Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN <inf>x</inf> and AlGaN layers . Journal of Physics: Conference Series . vol. 209 ,
Moram MA, Kappers MJ, Humphreys CJ ( 2010 ) . Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 7 , 1778 - 1780 .
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA ( 2010 ) . Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS . Journal of Physics: Conference Series . vol. 209 ,
Chee KWA, Bosch EGT, Humphreys CJ ( 2010 ) . Progress towards quantitative dopant profiling in the SEM . Journal of Physics: Conference Series . vol. 209 ,
Jepson MAE, Inkson BJ, Beanland R, Chee AKW, Humphreys CJ, Rodenburg C ( 2010 ) . Progress towards site-specific dopant profiling in the scanning electron microscope . Journal of Physics: Conference Series . vol. 209 ,
Oliver RA, Bennett SE, Sumner J, Kappers MJ, Humphreys CJ ( 2010 ) . Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth . Journal of Physics: Conference Series . vol. 209 ,
Chee KWA, Beanland R, Midgley PA, Humphreys CJ ( 2010 ) . Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system . Journal of Physics: Conference Series . vol. 209 ,
Barnard JS, Bennett SE, Oliver RA, Kappers MJ, Humphreys CJ ( 2010 ) . The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials . Journal of Physics: Conference Series . vol. 209 ,
Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ, Humphreys CJ ( 2009 ) . Structural properties of wurtzitelike ScGaN films grown by NH <inf>3</inf>-molecular beam epitaxy . Journal of Applied Physics vol. 106 , ( 11 )
Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2009 ) . Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN . Journal of Applied Physics vol. 106 , ( 10 )
Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ, Humphreys CJ ( 2009 ) . On the origin of threading dislocations in GaN films . Journal of Applied Physics vol. 106 , ( 7 )
Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ, Corbett B ( 2009 ) . Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes . Applied Physics Letters vol. 95 , ( 15 )
Moram MA, Oliver RA, Kappers MJ, Humphreys CJ ( 2009 ) . The spatial distribution of threading dislocations in gallium nitride films . Advanced Materials vol. 21 , ( 38-39 ) 3941 - 3944 .
Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A ( 2009 ) . Non-linear excitation and correlation studies of single InGaN quantum dots . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 6 , 864 - 867 .
Oliver RA, Sumner J, Kappers MJ, Humphreys CJ ( 2009 ) . Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images . Journal of Applied Physics vol. 106 , ( 5 )
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films . Journal of Physics D: Applied Physics vol. 42 , ( 13 )
Sridhara Rao DV, McLaughlin K, Kappers MJ, Humphreys CJ ( 2009 ) . Lattice distortions in GaN on sapphire using the CBED-HOLZ technique . Ultramicroscopy vol. 109 , ( 10 ) 1250 - 1255 .
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction . Physica B: Condensed Matter vol. 404 , ( 16 ) 2189 - 2191 .
Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA et al. ( 2009 ) . Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy . Journal of Applied Physics vol. 106 , ( 1 )
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Sridhara Rao DV, Sanchez AM et al. ( 2009 ) . Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates . Journal of Applied Physics vol. 105 , ( 12 )
Moram MA, Johnston CF, Hollander JL, Kappers MJ, Humphreys CJ ( 2009 ) . Understanding x-ray diffraction of nonpolar gallium nitride films . Journal of Applied Physics vol. 105 , ( 11 )
Bennett SE, Oliver RA, Saxey DW, Cerezo A, Clifton PH, Ulfig R, Kappers MJ, Humphreys CJ ( 2009 ) . Atom probe tomography studies of gan-based semiconductor materials . Microscopy and Microanalysis . vol. 15 , 280 - 281 .
Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C, Humphreys CJ ( 2009 ) . Optical and microstructural properties of semi-polar (11-22) InGaN/GaN quantum well structures . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 6 ,
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Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C, Tahraoui A ( 2009 ) . Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot . Nanotechnology vol. 20 , ( 24 )
Johnston CF, Kappers MJ, Moram MA, Hollander JL, Humphreys CJ ( 2009 ) . Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire . Journal of Crystal Growth vol. 311 , ( 12 ) 3295 - 3299 .
Johnston CF, Kappers MJ, Moram MA, Hollander JL, Humphreys CJ ( 2009 ) . Defect reduction in non-polar (112̄0) GaN grown on (11̄02) sapphire . Physica Status Solidi (A) Applications and Materials Science . vol. 206 , 1190 - 1193 .
Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers . Journal of Crystal Growth vol. 311 , ( 12 ) 3239 - 3242 .
Holec D, Sridhara Rao DV, Humphreys CJ ( 2009 ) . HANSIS software tool for the automated analysis of HOLZ lines . Ultramicroscopy vol. 109 , ( 7 ) 837 - 844 .
Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H et al. ( 2009 ) . Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy . Physica Status Solidi (A) Applications and Materials Science . vol. 206 , 1205 - 1210 .
Johnston CF, Moram MA, Kappers MJ, Humphreys CJ ( 2009 ) . Defect reduction in (11 2- 2) semipolar GaN grown on m -plane sapphire using ScN interlayers . Applied Physics Letters vol. 94 , ( 16 )
Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method . Journal of Applied Physics vol. 105 , ( 7 )
Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianua CO, Thrush EJ, Kappers MJ, Phillips WA et al. ( 2009 ) . GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE . Proceedings of SPIE - The International Society for Optical Engineering . vol. 7231 ,
Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ, Campion RP ( 2009 ) . Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy . Journal of Crystal Growth vol. 311 , ( 7 ) 2054 - 2057 .
Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA, Humphreys CJ ( 2009 ) . Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices . Applied Physics Letters vol. 94 , ( 1 )
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A ( 2008 ) . Electrically driven single InGaN/GaN quantum dot emission . Applied Physics Letters vol. 93 , ( 23 )
Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Assessment of scanning spreading resistance microscopy for application to n-type GaN . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 1652 - 1654 .
Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J, Humphreys CJ ( 2008 ) . Degradation of III-nitride laser diodes grown by molecular beam epitaxy . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 2204 - 2206 .
Dawson P, Hylton NP, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 2270 - 2273 .
Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . Equilibrium critical thickness for misfit dislocations in III-nitrides . Journal of Applied Physics vol. 104 , ( 12 )
Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Gross well-width fluctuations in InGaN quantum wells . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 1475 - 1481 .
Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ, Humphreys CJ ( 2008 ) . High brightness near-ultraviolet resonant LEDs . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 2056 - 2058 .
Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 1482 - 1484 .
Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . High resolution laplace deep level transient spectroscopy studies of shallow and deep levels in n-GaN . Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD . 30 - 33 .
Johnston CF, Kappers MJ, Barnard JS, Humphreys CJ ( 2008 ) . Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 1786 - 1788 .
Datta R, McAleese C, Cherns P, Rayment FDG, Humphreys CJ ( 2008 ) . Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 1743 - 1745 .
Salcianu CO, Thrush EJ, Plumb RG, Boyd AR, Rockenfeller O, Schmitz D, Heuken M, Humphreys CJ ( 2008 ) . Palladium-based on-wafer electroluminescence studies of GaN-based LED structures . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 2219 - 2221 .
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S, Borghs G ( 2008 ) . Structural features in GaN grown on a Ge(111) substrate . Physica Status Solidi (C) Current Topics in Solid State Physics . vol. 5 , 1802 - 1804 .
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Moram MA, Barber ZH, Humphreys CJ ( 2008 ) . The effect of oxygen incorporation in sputtered scandium nitride films . Thin Solid Films vol. 516 , ( 23 ) 8569 - 8572 .
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Holec D, Costa PMFJ, Cherns PD, Humphreys CJ ( 2008 ) . Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs . Micron vol. 39 , ( 6 ) 690 - 697 .
Jiang N, Qiu J, Humphreys CJ, Spence JCH ( 2008 ) . Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure . Micron vol. 39 , ( 6 ) 698 - 702 .
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW, Cerezo A ( 2008 ) . Three-dimensional atom probe analysis of green- and blue-emitting In <inf>x</inf> Ga<inf>1-x</inf> NGaN multiple quantum well structures . Journal of Applied Physics vol. 104 , ( 1 )
Oliver RA, Van der Laak NK, Kappers MJ, Humphreys CJ ( 2008 ) . Insights into the growth mechanism of In<inf>x</inf>Ga<inf>1-x</inf>N epitaxial nanostructures formed using a silane predose . Journal of Crystal Growth vol. 310 , ( 15 ) 3459 - 3465 .
Oliver RA, Galtrey MJ, Humphreys CJ ( 2008 ) . High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems . Materials Science and Technology vol. 24 , ( 6 ) 675 - 681 .
Moram MA, Vickers ME, Kappers MJ, Humphreys CJ ( 2008 ) . The effect of wafer curvature on x-ray rocking curves from gallium nitride films . Journal of Applied Physics vol. 103 , ( 9 )
Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT, Humphreys CJ ( 2008 ) . Growth of epitaxial thin films of scandium nitride on 100-oriented silicon . Journal of Crystal Growth vol. 310 , ( 11 ) 2746 - 2750 .
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larsen D et al. ( 2008 ) . Atom probe reveals the structure of In<inf>x</inf>Ga<inf>1-x</inf>N based quantum wells in three dimensions . Physica Status Solidi (B) Basic Research . vol. 245 , 861 - 867 .
Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA, Humphreys CJ ( 2008 ) . Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field . Superlattices and Microstructures . vol. 43 , 431 - 435 .
Sumner J, Das Bakshi S, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Unintentional doping in GaN assessed by scanning capacitance microscopy . Physica Status Solidi (B) Basic Research . vol. 245 , 896 - 898 .
Moram MA, Kappers MJ, Zhang Y, Barber ZH, Humphreys CJ ( 2008 ) . Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers . Physica Status Solidi (A) Applications and Materials Science . vol. 205 , 1064 - 1066 .
Rossetti M, Smeeton TM, Tan WS, Kauer M, Hooper SE, Heffernan J, Xiu H, Humphreys CJ ( 2008 ) . Degradation of InGaNGaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings . Applied Physics Letters vol. 92 , ( 15 )
Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Assessment of the performance of scanning capacitance microscopy for n -type gallium nitride . Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures vol. 26 , ( 2 ) 611 - 617 .
Hollander JL, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . Improvements in a -plane GaN crystal quality by a two-step growth process . Applied Physics Letters vol. 92 , ( 10 )
De Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D, Humphreys CJ ( 2008 ) . Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures . Advanced Materials vol. 20 , ( 5 ) 1038 - 1043 .
Oliver RA, Kappers MJ, McAleese C, Datta R, Sumner J, Humphreys CJ ( 2008 ) . The origin and reduction of dislocations in Gallium Nitride . Journal of Materials Science: Materials in Electronics . vol. 19 ,
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D, Humphreys CJ ( 2008 ) . Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008) . Advanced Materials vol. 20 , ( 5 ) na - na .
Oliver RA, Jarjour AF, Taylor RA, Tahraoui A, Zhang Y, Kappers MJ, Humphreys CJ ( 2008 ) . Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source . Materials Science and Engineering B: Solid-State Materials for Advanced Technology . vol. 147 , 108 - 113 .
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D et al. ( 2008 ) . Compositional inhomogeneity of a high-efficiency Inx Ga1-x N based multiple quantum well ultraviolet emitter studied by three dimensional atom probe . Applied Physics Letters vol. 92 , ( 4 )
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McAleese C, Kappers MJ, Rayment FDG, Cherns P, Humphreys CJ ( 2004 ) . Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN . Journal of Crystal Growth . vol. 272 , 475 - 480 .
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Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ, Hole DE ( 2004 ) . Broadband sensitization of 1.53 μm Er<sup>3+</sup> luminescence in erbium-implanted alumina . Applied Physics Letters vol. 85 , ( 22 ) 5200 - 5202 .
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Yan J, Kappers MJ, Crossley A, McAleese C, Phillips WA, Humphreys CJ ( 2004 ) . Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN . Physica Status Solidi C: Conferences . vol. 1 , 2820 - 2824 .
Datta R, Kappers MJ, Barnard JS, Humphreys CJ ( 2004 ) . Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image . Applied Physics Letters vol. 85 , ( 16 ) 3411 - 3413 .
Datta R, Kappers MJ, Vickers ME, Barnard JS, Humphreys CJ ( 2004 ) . Growth and characterisation of GaN with reduced dislocation density . Superlattices and Microstructures . vol. 36 , 393 - 401 .
Chen GS, Chen GS, Hsiao HH, Louh RF, Humphreys CJ ( 2004 ) . Improving thermal stability of LiMn<inf>2</inf>O<inf>4</inf> thin films by in situ coating of α-MnO<inf>2</inf> using high-pressure and high-temperature sputtering . Electrochemical and Solid-State Letters vol. 7 , ( 8 )
Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2004 ) . Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots . IEEE Transactions on Nanotechnology vol. 3 , ( 3 ) 343 - 347 .
Yan J, Kappers MJ, Barber ZH, Humphreys CJ ( 2004 ) . Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN . Applied Surface Science . vol. 234 , 328 - 332 .
KAZEMIAN P ( 2004 ) . Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM . Microelectronic Engineering . vol. 73-74 , 948 - 953 .
Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Andrew G, Briggs D, Kappers MJ et al. ( 2004 ) . Temporal variation in photoluminescence from single InGaN quantum dots . Applied Physics Letters vol. 84 , ( 20 ) 4110 - 4112 .
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2004 ) . Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots . Physica Status Solidi C: Conferences . vol. 1 , 568 - 572 .
Moldovan G, Harrison I, Humphreys CJ, Kappers M, Brown PD ( 2004 ) . Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts . Materials Science and Technology vol. 20 , ( 4 ) 533 - 538 .
Kaestner B, Schönjahn C, Humphreys CJ ( 2004 ) . Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope . Applied Physics Letters vol. 84 , ( 12 ) 2109 - 2111 .
Taylor RA, Robinson JW, Rice JH, Jarjour A, Smith JD, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2004 ) . Dynamics of single InGaN quantum dots . Physica E: Low-Dimensional Systems and Nanostructures . vol. 21 , 285 - 289 .
Rice JH, Oliver RA, Robinson JW, Smith JD, Taylor RA, Briggs GAD, Kappers MJ, Humphreys CJ et al. ( 2004 ) . InGaN quantum dots grown by MOVPE via a droplet epitaxy route . Physica E: Low-Dimensional Systems and Nanostructures . vol. 21 , 546 - 550 .
Belyaev AE, Makarovsky O, Walker DJ, Eaves L, Foxon CT, Novikov SV, Zhao LX, Dykeman RI et al. ( 2004 ) . Resonance and current instabilities in AlN/GaN resonant tunnelling diodes . Physica E: Low-Dimensional Systems and Nanostructures . vol. 21 , 752 - 755 .
Ofori AP, Humphreys CJ, Tin S, Jones CN ( 2004 ) . A tem study of the effect of platinum group metals in advanced single crystal nickel-base superalloys . Proceedings of the International Symposium on Superalloys . 787 - 794 .
Humphreys C ( 2004 ) . Can a Materials Scientist Move Mount Sinai? . MRS Bulletin vol. 29 , ( 4 ) 222 - 223 .
Kazemian P, Rodenburg C, Humphreys CJ ( 2004 ) . Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM . Microelectronic Engineering . vol. 73-74 , 948 - 953 .
Campbell LC, Wilkinson MJ, Manz A, Camilleri P, Humphreys CJ ( 2004 ) . Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries . Lab on a Chip vol. 4 , ( 3 ) 225 - 229 .
Charles MB, Kappers MJ, Humphreys CJ ( 2004 ) . Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111) . MRS Advances vol. 831 , ( 1 ) 377 - 381 .
Datta R, Kappers MJ, Barnard JS, Humphreys CJ ( 2004 ) . Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE . MRS Advances vol. 831 ,
Hobbs RA, Tin S, Rae CMF, Broomfield RW, Humphreys CJ ( 2004 ) . Solidification characteristics of advanced nickel-base single crystal superalloys . Proceedings of the International Symposium on Superalloys . 819 - 825 .
Arutyunov NY, Emtsev VV, Mikhailin AV, Humphreys CJ ( 2003 ) . Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data . Physica B: Condensed Matter . vol. 340-342 , 412 - 415 .
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ ( 2003 ) . Electron-beam-induced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope . Applied Physics Letters vol. 83 , ( 26 ) 5419 - 5421 .
Foxon CT, Novikov SV, Belyaev AE, Zhao LX, Makarovsky O, Walker DJ, Eaves L, Dykeman RI et al. ( 2003 ) . Current-voltage instabilities in GaN/AlGaN resonant tunnelling structures . Physica Status Solidi C: Conferences . 2389 - 2392 .
Oliver RA, Kappers MJ, Rice JH, Smith JD, Taylor RA, Humphreys CJ, Briggs GAD ( 2003 ) . Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal . Physica Status Solidi C: Conferences . 2515 - 2519 .
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ ( 2003 ) . Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy . Physica Status Solidi (B) Basic Research . vol. 240 , 297 - 300 .
Graham DM, Soltani Vala A, Dawson P, Godfrey MJ, Kappers MJ, Smeeton TM, Barnard JS, Humphreys CJ et al. ( 2003 ) . Exciton localization in InGaN/GaN single quantum well structures . Physica Status Solidi (B) Basic Research . vol. 240 , 344 - 347 .
Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ, Humphreys CJ ( 2003 ) . Comment on "AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)] . Applied Physics Letters vol. 83 , ( 17 ) 3626 - 3627 .
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2003 ) . Time-resolved dynamics in single InGaN quantum dots . Applied Physics Letters vol. 83 , ( 13 ) 2674 - 2676 .
Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ, Foxon CT ( 2003 ) . Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates . Journal of Crystal Growth vol. 256 , ( 3-4 ) 237 - 242 .
Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS, Humphreys CJ ( 2003 ) . Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering . Journal of Applied Physics vol. 94 , ( 3 ) 1565 - 1574 .
Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD, Taylor RA ( 2003 ) . InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal . Applied Physics Letters vol. 83 , ( 4 ) 755 - 757 .
Schönjahn C, Broom RF, Humphreys CJ, Howie A, Mentink SAM ( 2003 ) . Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector . Applied Physics Letters vol. 83 , ( 2 ) 293 - 295 .
Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ, Bougrioua Z ( 2003 ) . Detailed interpretation of electron transport in n-GaN . Journal of Applied Physics vol. 93 , ( 11 ) 9095 - 9103 .
Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ, Humphreys CJ ( 2003 ) . Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm . Applied Physics Letters vol. 82 , ( 17 ) 2755 - 2757 .
Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ, Humphreys CJ ( 2003 ) . Arsenic incorporation in GaN during growth by molecular beam epitaxy . Journal of Crystal Growth . vol. 251 , 510 - 514 .
Keast VJ, Kappers MJ, Humphreys CJ ( 2003 ) . Electron energy-loss near edge structure (ELNES) of InGaN quantum wells . Journal of Microscopy . vol. 210 , 89 - 93 .
Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG et al. ( 2003 ) . GaN/InGaN quantum wells grown in a close coupled showerhead reactor . Journal of Crystal Growth . vol. 248 , 518 - 522 .
Smeeton TM, Kappers MJ, Barnard JS, Humphreys CJ ( 2003 ) . Analysis of InGaN-Gan quantum well chemistry and interfaces by transmission electron microscopy and X-ray scattering . Materials Research Society Symposium - Proceedings . vol. 798 , 787 - 792 .
Schönjahn C, Humphreys CJ, Glick M ( 2002 ) . Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors . Journal of Applied Physics vol. 92 , ( 12 ) 7667 - 7671 .
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW ( 2002 ) . Response to "comment on 'Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells'" [Appl. Phys. Lett. 81, 3100 (2002)] . Applied Physics Letters vol. 81 , ( 16 ) 3102 - 3103 .
Keast VJ, Scott AJ, Kappers MJ, Foxon CT, Humphreys CJ ( 2002 ) . Electronic structure of GaN and In<inf>x</inf>Ga<inf>1-x</inf>N measured with electron energy-loss spectroscopy . Physical Review B - Condensed Matter and Materials Physics vol. 66 , ( 12 ) 1253191 - 1253197 .
Thrush EJ, Kappers MJ, Dawson P, Graham D, Barnard JS, Vickers ME, Considine L, Mullins JT et al. ( 2002 ) . GaN-InGaN quantum well and LED structures grown in a close coupled showerhead (CCS) MOCVD reactor . Physica Status Solidi (A) Applied Research . vol. 192 , 354 - 359 .
Elliott SL, Broom RF, Humphreys CJ ( 2002 ) . Dopant profiling with the scanning electron microscope - A study of Si . Journal of Applied Physics vol. 91 , ( 11 ) 9116 - 9122 .
Chen GS, Lee PY, Boothroyd CB, Humphreys CJ ( 2002 ) . Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation . Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films vol. 20 , ( 3 ) 986 - 990 .
Humphreys CJ ( 2002 ) . Chapter 2.9.1 Theory of Electron Scattering and Electron Diffraction . Scattering ,
Thomas SM, Humphreys C ( 2002 ) . Colin Humphreys - A practical physicist having fun in the world of materials . MATERIALS WORLD vol. 10 , ( 1 ) 11 - 11 .
Schönjahn C, Humphreys C, Glick M ( 2002 ) . Energy filtered imaging in a FEG-SEM for enhanced dopant contrast . Microscopy and Microanalysis . vol. 8 , 718 - 719 .
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ ( 2002 ) . Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms . Journal of Applied Physics vol. 91 , ( 1 ) 367 - 374 .
Bright AN, Sharma N, Humphreys CJ ( 2001 ) . Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy . Journal of Electron Microscopy vol. 50 , ( 6 ) 489 - 495 .
Bright AN, Humphreys CJ ( 2001 ) . Identification of interfacial layers in Ohmic contacts to n-type GaN and Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterostructures using high-resolution electron microscopy . Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties vol. 81 , ( 11 ) 1725 - 1744 .
Bright AN, Humphreys CJ ( 2001 ) . Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy . PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES . vol. 81 , 1725 - 1744 .
Cho HK, Lee JY, Kim CS, Yang GM, Sharma N, Humphreys C ( 2001 ) . Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition . Journal of Crystal Growth vol. 231 , ( 4 ) 466 - 473 .
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW ( 2001 ) . Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells . Applied Physics Letters vol. 79 , ( 16 ) 2594 - 2596 .
Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T et al. ( 2001 ) . Chemical mapping of InGaN MQWs . Journal of Crystal Growth vol. 230 , ( 3-4 ) 438 - 441 .
Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ, Thrush EJ ( 2001 ) . Observation of thermally activated conduction at a GaN-sapphire interface . Applied Physics Letters vol. 79 , ( 8 ) 1121 - 1123 .
Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N, Humphreys C ( 2001 ) . Effects of electron-beam exposure on a ruthenium nanocluster polymer . Journal of Applied Physics vol. 90 , ( 2 ) 947 - 952 .
Pankhurst DA, Botton GA, Humphreys CJ ( 2001 ) . Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary . Physical Review B - Condensed Matter and Materials Physics vol. 63 , ( 20 )
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ ( 2001 ) . Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals . Materials Science and Engineering B: Solid-State Materials for Advanced Technology vol. 81 , ( 1-3 ) 19 - 22 .
Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ, Davies R ( 2001 ) . Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy . Journal of Applied Physics vol. 89 , ( 6 ) 3143 - 3150 .
Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD, Humphreys CJ ( 2001 ) . Microstructure of semiconducting MnSi<inf>1.7</inf> and β-FeSi<inf>2</inf> layers grown by surfactant-mediated reactive deposition epitaxy . Thin Solid Films vol. 381 , ( 2 ) 231 - 235 .
Bright AN, Tricker DM, Humphreys CJ, Davies R ( 2001 ) . A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN . Journal of Electronic Materials vol. 30 , ( 3 ) L13 - L16 .
Sharma N, Kappers M, Barnard J, Vickers M, Humphreys C ( 2001 ) . Chemical mapping of InGaN/GaN LEDs . MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 . 263 - 266 .
Sharma N, Cho HK, Lee JY, Humphreys CJ ( 2001 ) . Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells . Materials Research Society Symposium - Proceedings vol. 667 , G671 - G676 .
Keast VJ, Scott AJ, Kappers MJ, Humphreys CJ ( 2001 ) . Electronic structure of GaN studied with electron energy loss spectroscopy and density functional theory . ELECTRON MICROSCOPY AND ANALYSIS 2001 . 441 - 444 .
Keast VJ, Sharma N, Humphreys CJ ( 2001 ) . Energy-loss spectroscopy of GaN alloys and quantum wells . MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 . 259 - 262 .
Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L et al. ( 2001 ) . Material optimisation for AlGaN/GaN HFET applications . Journal of Crystal Growth vol. 230 , ( 3-4 ) 573 - 578 .
Ramloll CS, Bougrioua Z, Barnard JS, Humphreys CJ, Moerman I ( 2001 ) . Microstructural aspects of the early stages of GaN growth by MOCVD . ELECTRON MICROSCOPY AND ANALYSIS 2001 . 469 - 472 .
Elliott SL, Broom RF, Humphreys CJ ( 2001 ) . SEM doping contrast at a Si pn junction . MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 . 431 - 434 .
Barnard JS, Sharma N, Cho HK, Humphreys CJ ( 2001 ) . The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study . ELECTRON MICROSCOPY AND ANALYSIS 2001 . 481 - 484 .
Saifullah MSM, Kurihara K, Humphreys CJ ( 2000 ) . Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists . Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures vol. 18 , ( 6 ) 2737 - 2744 .
Sharma N, Thomas P, Tricker D, Humphreys C ( 2000 ) . Chemical mapping and formation of V-defects in InGaN multiple quantum wells . Applied Physics Letters vol. 77 , ( 9 ) 1274 - 1276 .
Pekarskaya E, Botton GA, Jones CN, Humphreys CJ ( 2000 ) . Effect of annealing on the microstructure and tensile properties of a β/γ′ Ni-Al-Fe alloy . Intermetallics vol. 8 , ( 8 ) 903 - 913 .
Sharma N, Tricker D, Keast V, Hooper S, Heffernan J, Barnes J, Kean A, Humphreys C ( 2000 ) . Effect of the buffer layer on the structure, mobility and photoluminescence of MBE grown GaN . Materials Research Society Symposium - Proceedings . vol. 595 ,
Humphreys C ( 2000 ) . Facing up to the future of materials science and technology . Materials World vol. 8 , ( 4 ) 11 - 13 .
Botton GA, Nishino Y, Humphreys CJ ( 2000 ) . Microstructural evolution and stability of (Fe<inf>1-x</inf>V<inf>x</inf>)<inf>3</inf>Al alloys in relation to the electronic structure . Intermetallics vol. 8 , ( 9-11 ) 1209 - 1214 .
Humphreys C ( 2000 ) . Oxbridge and the public schools . MATERIALS WORLD vol. 8 , ( 1 ) 2 - 3 .
Humphreys C ( 2000 ) . THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL . Vetus Testamentum vol. 50 , ( 3 ) 323 - 328 .
Fairbank GB, Humphreys CJ, Kelly A, Jones CN ( 2000 ) . Ultra-high temperature intermetallics for the third millennium . Intermetallics . vol. 8 , 1091 - 1100 .
Pekarskaya E, Jones CN, Humphreys CJ ( 1999 ) . Comparative study of the microstructure and tensile properties of Ni-Al alloys with Fe and Cr additions . Materials Research Society Symposium - Proceedings vol. 552 ,
Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ, Temmerman WM ( 1999 ) . Electronic structure, charge transfer and bonding in intermetallics using EELS and density functional theory . Materials Research Society Symposium - Proceedings vol. 552 ,
Chen GS, Humphreys CJ ( 1999 ) . Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials . Journal of Applied Physics vol. 85 , ( 1 ) 148 - 152 .
Humphreys CJ ( 1999 ) . Physical chemistry: Electrons seen in orbit . Nature vol. 401 , ( 6748 ) 21 - 22 .
Saifullah MSM, Botton GA, Boothroyd CB, Humphreys CJ ( 1999 ) . Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF<inf>3</inf> . Journal of Applied Physics vol. 86 , ( 5 ) 2499 - 2504 .
Natusch MKH, Humphreys CJ, Menon N, Krivanek OL ( 1999 ) . Experimental and theoretical study of the detection limits in electron energy-loss spectroscopy . Micron . vol. 30 , 173 - 183 .
Humphreys CJ ( 1999 ) . A two-phase charge-density real-space-pairing model of high-T<inf>c</inf> superconductivity . Acta Crystallographica Section A: Foundations of Crystallography vol. 55 , ( 2 PART I ) 228 - 233 .
Humphreys CJ ( 1999 ) . A two-phase charge-density real-space-pairing model of high-Tc superconductivity . Acta Crystallogr A vol. 55 , ( Pt 2 Pt 1 ) 228 - 233 .
Bright AN, Brown PD, Tricker DM, Jeffs N, Foxon CT, Humphreys CJ ( 1999 ) . A TEM assessment of GaN/SiC layers grown by MBE . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 415 - 418 .
Walther T, Humphreys CJ ( 1999 ) . A quantitative study of compositional profiles of chemical vapour-deposited strained silicon-germanium/silicon layers by transmission electron microscopy . Journal of Crystal Growth vol. 197 , ( 1-2 ) 113 - 128 .
Humphreys CJ, Bright AN, Elliott SL ( 1999 ) . Advances in high resolution imaging and microanalysis of Si, GaAs and GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 1 - 10 .
Tricker DM, Jacobs K, Humphreys CJ ( 1999 ) . Characterisation of epitaxial laterally overgrown gallium nitride using transmission electron microscopy . Physica Status Solidi (B) Basic Research . vol. 216 , 633 - 637 .
Bright AN, Tricker DM, Davies R, Beanland R, Thomas PJ, Lloyd SJ, Midgley PA, Humphreys CJ ( 1999 ) . Characterisation of ohmic contacts to n-GaN using transmission electron microscopy . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 597 - 600 .
Sharma N, Keast VJ, Iwayama TS, Boyd I, Humphreys CJ ( 1999 ) . Characterisation of silicon nanocrystals in silica and correlation with luminescence . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 589 - 592 .
Keast VJ, Midgley PA, Lloyd SJ, Thomas PJ, Weyland M, Boothroyd CB, Humphreys CJ ( 1999 ) . Composition of grain boundaries and interfaces: A comparison of modern analytical techniques using a 300 kV FEGTEM . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 35 - 38 .
Keast VJ, Misra A, Kung H, Mitchell TE, Humphreys CJ ( 1999 ) . Compositional mapping of nanoscale metallic multilayers: a comparison of techniques . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 211 - 214 .
Humphreys CJ ( 1999 ) . Convergent Beam Electron Diffraction . 325 - 337 .
Etheridge J, Moodie AF, Humphreys CJ ( 1999 ) . DIRECT MEASUREMENT OF PHASE-INVARIANTS AND STRUCTURE AMPLITUDES FROM 3 BEAM CBED PATTERNS . ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES . vol. 55 , 24 - 24 .
Botton GA, Humphreys CJ ( 1999 ) . Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory . Intermetallics . vol. 7 , 829 - 833 .
Pekarskaya E, Jones CN, Humphreys CJ ( 1999 ) . Dislocations in a multiphase Ni-Al-Fe alloy . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 463 - 466 .
Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD, Richter W ( 1999 ) . Effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy . Journal of Materials Research vol. 14 , ( 5 ) 2036 - 2042 .
Smith JP, Eccleston W, Brown PD, Humphreys CJ ( 1999 ) . Electronic and structural properties of partially crystallized silicon produced by solid-phase crystallization of as-deposited amorphous silicon . Journal of the Electrochemical Society vol. 146 , ( 1 ) 306 - 312 .
Liu CP, Boothroyd CB, Humphreys CJ ( 1999 ) . Energy-filtered transmission electron microscopy of multilayers in semiconductors . Journal of Microscopy vol. 194 , ( 1 ) 58 - 70 .
Elliott SL, Broom RF, Humphreys CJ, Thrush EJ, Considine L, Thomson DB, de Boer WB ( 1999 ) . FEG-SEM imaging of semiconductor dopant contrast . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 727 - 730 .
Moodie AF, Etheridge J, Humphreys CJ ( 1999 ) . GEOMETRY OF THREE BEAM PHASE DETERMINATION . ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES . vol. 55 , 24 - 24 .
Brown PD, Weyher JL, Boothroyd CB, Foord DT, Zauner ARA, Hageman PR, Larsen PK, Bockowski M et al. ( 1999 ) . Inversion domain nucleation in homoepitaxial GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 381 - 384 .
Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ et al. ( 1999 ) . Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) . Journal of Crystal Growth vol. 204 , ( 4 ) 419 - 428 .
Pankhurst DA, Botton GA, Humphreys CJ ( 1999 ) . Obtaining bonding information from EELS near-edge structures: grain-boundaries in NiAl . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 67 - 70 .
Humphreys CJ, Botton GA ( 1999 ) . Probing atomic bonding using fast electrons . TOPICS IN ELECTRON DIFFRACTION AND MICROSCOPY OF MATERIALS . 65 - 78 .
Liu CP, Preston AR, Boothroyd CB, Humphreys CJ ( 1999 ) . Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images . Journal of Microscopy vol. 194 , ( 1 ) 171 - 182 .
Yonenaga I, Lim SH, Shindo D, Brown PD, Humphreys CJ ( 1999 ) . Structure and climb of faulted dipoles in GaAs . Physica Status Solidi (A) Applied Research vol. 171 , ( 1 ) 53 - 57 .
Whitfield HJ, Moodie AF, Etheridge J, Humphreys CJ ( 1999 ) . THE VALIDITY OF QUASI-KINEMATIC THEORY IN ELECTRON CRYSTALLOGRAPHY . ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES . vol. 55 , 24 - 24 .
Elliott SL, Broom RF, Humphreys CJ ( 1999 ) . Temperature and energy dependence of SEM dopant contrast . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 87 - 90 .
Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A, Richter W ( 1999 ) . Transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy . Journal of Materials Research vol. 14 , ( 8 ) 3226 - 3236 .
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al. ( 1998 ) . High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux . JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS vol. 37 , ( 12A ) 6556 - 6561 .
Ogawa H, Watanabe M, Ohsato H, Humphreys C ( 1998 ) . Microwave dielectric properties of (Y<inf>2-x</inf>R<inf>x</inf>)BaCuO<inf>5</inf> (R = rare-earth) solid solutions . IEEE International Symposium on Applications of Ferroelectrics517 - 520 .
Humphreys C ( 1998 ) . Stuff of dreams . New Scientist vol. 157 , ( 2126 ) 44 - 45 .
Yonenaga I, Brown PD, Humphreys CJ ( 1998 ) . Climb of dislocations in GaAs by irradiation . Materials Science and Engineering A vol. 253 , ( 1-2 ) 148 - 150 .
Watanabe M, Ogawa H, Ohsato H, Humphreys C ( 1998 ) . Microwave Dielectric Properties of Y2Ba(Cu1-xZnx)O5 Solid Solutions . Japanese Journal of Applied Physics . vol. 37 ,
Humphreys C ( 1998 ) . Shaping the future of materials science . Materials World vol. 6 , ( 6 ) 352 - 355 .
Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y, Humphreys CJ ( 1998 ) . Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy . Journal of Applied Physics vol. 83 , ( 10 ) 5504 - 5508 .
Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ, Sutton AP ( 1998 ) . Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study . Physical Review B vol. 57 , ( 3 ) 1505 - 1509 .
Tricker DM, Bright AN, Brown PD, Korakakis D, Cheng TS, Foxon CT, Humphreys CJ ( 1998 ) . A TEM study of a GaN/InGaN superlattice structure grown by MBE . ELECTRON MICROSCOPY 1998, VOL 3 . 393 - 394 .
Tricker DM, Brown PD, Cheng TS, Foxon CT, Humphreys CJ ( 1998 ) . A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates . Applied Surface Science . vol. 123-124 , 22 - 27 .
Pankhurst DA, Botton GA, Humphreys CJ ( 1998 ) . A joint theoretical and experimental investigation of bonding character at a grain boundary in the B2 compound NiAl . ELECTRON MICROSCOPY 1998, VOL 2 . 643 - 644 .
Humphreys CJ ( 1998 ) . A microstructural model of high-T-c superconductivity . ELECTRON . 124 - 134 .
Natusch MKH, Botton GA, Humphreys CJ ( 1998 ) . A simple and efficient way to obtain more information about interband transitions from an electron energy-loss spectrum in the low-loss region . ELECTRON MICROSCOPY 1998, VOL 3 . 627 - 628 .
Lim SH, Shindo D, Yonenaga I, Brown PD, Humphreys CJ ( 1998 ) . Atomic arrangement of a Z-shape faulted dipole within deformed GaAs . Physical Review Letters vol. 81 , ( 24 ) 5350 - 5353 .
Natusch MKH, Botton GA, Krivanek OL, Humphreys CJ ( 1998 ) . Characterisation of a Gatan Imaging Filter mounted on a dedicated STEM . ELECTRON MICROSCOPY 1998, VOL 1 . 95 - 96 .
Natusch MKH, Botton GA, Krivanek OL, Humphreys CJ ( 1998 ) . Detection limits in electron energy-loss spectroscopy and energy-filtered imaging . ELECTRON MICROSCOPY 1998, VOL 3 . 651 - 652 .
Etheridge J, Moodie AF, Humphreys CJ ( 1998 ) . Direct measurement of structure amplitudes from three beam interactions . ELECTRON MICROSCOPY 1998, VOL 3 . 737 - 738 .
Nishino Y, Inkson BJ, Ogawa T, Humphreys CJ ( 1998 ) . Effect of molybdenum substitution on phase stability and high-temperature strength of Fe<inf>3</inf>Al alloys . Philosophical Magazine Letters vol. 78 , ( 2 ) 97 - 103 .
Brown PD, Humphreys CJ ( 1998 ) . Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth . MRS Advances . vol. 523 ,
Chen GS, Boothroyd CB, Humphreys CJ ( 1998 ) . Electron-beam-induced damage in amorphous SiO<inf>2</inf> and the direct fabrication of silicon nanostructures . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 78 , ( 2 ) 491 - 506 .
Liu CP, Boothroyd CB, Humphreys CJ ( 1998 ) . Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors . MRS Advances . vol. 523 ,
Natusch MKH, Botton GA, Humphreys CJ ( 1998 ) . Evidence for charged defects in wurtzite GaN from spatially resolved electron energy-loss spectroscopy . ELECTRON MICROSCOPY 1998, VOL 3 . 391 - 392 .
Campbell LCI, Humphreys CJ ( 1998 ) . Experimental investigation of the effect of defocus on beam diameter in focused ion beam milling . ELECTRON MICROSCOPY 1998, VOL 3 . 157 - 158 .
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al. ( 1998 ) . High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux . Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37 , ( 12 ) 6556 - 6561 .
Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ ( 1998 ) . Irradiation damage of inorganic resists on a silicon substrate . ELECTRON . 531 - 537 .
Natusch MKH, Botton GA, Humphreys CJ ( 1998 ) . Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy . GROWTH AND PROCESSING OF ELECTRONIC MATERIALS . 30 - 36 .
Watanabe M, Ogawa H, Ohsato H, Humphreys C ( 1998 ) . Microwave dielectric properties of Y<inf>2</inf>Ba(Cu<inf>1-x</inf>Zn<inf>x</inf>)O<inf>5</inf> solid solutions . Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37 , ( 9 PART B ) 5360 - 5363 .
Kaiser U, Brown PD, Chuvilin A, Khodos I, Fissel A, Richter W, Preston A, Humphreys CJ ( 1998 ) . Observation of 3-fold periodicity in 3C-SiC layers grown by MBE . Materials Science Forum . vol. 264-268 , 259 - 262 .
Bright A, Brown PD, Tricker D, Humphreys C ( 1998 ) . RHEED for the rapid structural assessment of epitaxial GaN and metallisation layers . ELECTRON MICROSCOPY 1998, VOL 3 . 439 - 440 .
Liu CP, Boothroyd CB, Humphreys CJ ( 1998 ) . The Compton scattering distribution from InP by electron spectroscopic diffraction . ELECTRON . 456 - 463 .
Moodie AF, Etheridge J, Humphreys CJ ( 1998 ) . The Coulomb interaction and the direct measurement of structural phase . ELECTRON . 235 - 246 .
Humphreys C ( 1998 ) . The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI . Vetus Testamentum vol. 48 , ( 2 ) 196 - 213 .
Natusch MKH, Botton GA, Humphreys CJ, Krivanek OL ( 1998 ) . The ultimate detection limits of electron energy-loss spectroscopy . ELECTRON . 476 - 483 .
Brown PD, Tricker DM, Xin Y, Cheng TS, Foxon CT, Evans D, Galloway SA, Brock J et al. ( 1997 ) . Combined TEM/RHEED, SEM/CL study of epitaxial GaN . Materials Research Society Symposium - Proceedings . vol. 482 , 399 - 404 .
Tricker DM, Brown PD, Martin G, Lu J, Westwood DI, Hill P, Haworth L, Macdonald JE et al. ( 1997 ) . TEM study of the microstructural evolution of MBE-grown GaN . Materials Research Society Symposium - Proceedings . vol. 482 , 87 - 92 .
Chen GS, Humphreys CJ ( 1997 ) . Investigation of the proximity effect in amorphous AlF<inf>3</inf> electron-beam resists . Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures vol. 15 , ( 6 ) 1954 - 1960 .
Humphreys C ( 1997 ) . Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0 . European Review vol. 5 , ( 4 ) 443 - 445 .
Walther T, Humphreys CJ, Cullis AG ( 1997 ) . Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy . Applied Physics Letters vol. 71 , ( 6 ) 809 - 811 .
Botton GA, Humphreys CJ ( 1997 ) . Analysis of EELS near edge structures to study the bonding character in intermetallic alloys . Micron vol. 28 , ( 4 ) 313 - 319 .
Xin Y, Brown PD, Humphreys CJ, Cheng TS, Foxon CT ( 1997 ) . Domain boundaries in epitaxial wurtzite GaN . Applied Physics Letters vol. 70 , ( 10 ) 1308 - 1310 .
Campbell LCI, Foord DT, Humphreys CJ ( 1997 ) . 'Nano-machining' using a focused ion beam . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 657 - 660 .
Walther T, Humphreys CJ, Cullis AG, Robbins DJ ( 1997 ) . A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 47 - 54 .
Liu CP, Dunin-Borkowski RE, Boothroyd CB, Brown PD, Humphreys CJ ( 1997 ) . Characterization of ultrathin doping layers in semiconductors . Microscopy and Microanalysis vol. 3 , ( 4 ) 352 - 363 .
Wiezorek JMK, Humphreys CJ, Fraser HL ( 1997 ) . Determining directly from experiment the magnitude of the burgers vector of glissile 〈c〉-component dislocations in Ti<inf>3</inf>Al . Philosophical Magazine Letters vol. 75 , ( 5 ) 281 - 289 .
Natusch MKH, Botton GA, Humphreys CJ ( 1997 ) . Developing a methodology for the electron energy-loss spectroscopy of defects in GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 213 - 216 .
Walther T, Humphreys CJ, Robbins DJ ( 1997 ) . Diffusion and surface segregation in thin SiGe/Si layers studied by scanning transmission electron microscopy . Defect and Diffusion Forum . vol. 143-147 , 1135 - 1140 .
Xin Y, Brown PD, Cheng TS, Foxon CT, Humphreys CJ ( 1997 ) . Domain boundaries in epitaxial GaN grown on {(111)over-bar}B GaAs and GaP by molecular beam epitaxy . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 95 - 98 .
Botton GA, Guo G-Y, Temmerman WM, Humphreys CJ ( 1997 ) . Electron Energy Loss Spectroscopy as a Tool to Probe the Electronic Structure in Intermetallic Alloys . 175 - 180 .
Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ ( 1997 ) . Electron beam damage in titanium dioxide films . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 167 - 170 .
Humphreys C ( 1997 ) . Electron microscopy and analysis: the future . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 31 - 34 .
Cheng TS, Foxon CT, Ren GB, Jeffs NJ, Orton JW, Novikov SV, Xin Y, Brown PD et al. ( 1997 ) . Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy . COMPOUND SEMICONDUCTORS 1996 . 259 - 262 .
Natusch MKH, Botton GA, Broom RF, Brown PD, Tricker DM, Humphreys CJ ( 1997 ) . Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy . Materials Research Society Symposium - Proceedings . vol. 482 , 763 - 768 .
Pekarskaya E, Botton A, Jones CN, Humphreys CJ ( 1997 ) . Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 549 - 552 .
Botton GA, Burnell G, Humphreys CJ, Yadav T, Withers JC ( 1997 ) . Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts . Journal of Physics and Chemistry of Solids vol. 58 , ( 7 ) 1091 - 1102 .
Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS, Foxon CT ( 1997 ) . Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy . Journal of Crystal Growth vol. 171 , ( 3-4 ) 321 - 332 .
Kaiser U, Brown PD, Jinschek J, Adamik M, Humphreys CJ, Karmann S, Fissel A, Pfennighaus K et al. ( 1997 ) . Microstructural investigations of silicon carbide and aluminium nitride MBE layers on silicon substrates . EUROPEAN JOURNAL OF CELL BIOLOGY . vol. 74 , 120 - 120 .
Natusch MKH, Botton GA, Humphreys CJ, Krivanek OL ( 1997 ) . Modelling of electron energy-loss spectroscopy detection limits . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 339 - 342 .
Holzl M, Botton GA, Nelhiebel M, Humphreys CJ, Jouffrey B, Grogger W, Hofer F, Schattschneider P ( 1997 ) . Observation of the mixed dynamic form factor in the AgM4,5-edge . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 171 - 174 .
Tricker DM, Natusch MKH, Boothroyd CB, Xin Y, Brown PD, Cheng TS, Foxon CT, Humphreys CJ ( 1997 ) . Probing the effect of defects on band structure in GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 217 - 220 .
Walther T, Humphreys CJ ( 1997 ) . Quantification of the composition of silicon germanium/silicon structures by high-angle annular dark field imaging . ELECTRON MICROSCOPY AND ANALYSIS 1997 . 303 - 306 .
Brown PD, Smith JP, Eccleston W, Humphreys CJ ( 1997 ) . Structural and electronic properties of partially crystallised silicon . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 427 - 430 .
Tatsuoka H, Brown PD, Xin Y, Isaji K, Kuwabara H, Nakanishi Y, Nakamura T, Fujiyasu H et al. ( 1997 ) . Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 59 - 62 .
Liu CP, Boothroyd CB, Brown PD, Humphreys CJ ( 1997 ) . The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 67 - 70 .
Liu CP, Brown PD, Boothroyd CB, Humphreys CJ ( 1997 ) . The effects of surface relaxation and ion thinning on delta-doped semiconductor cross-sections . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 483 - 486 .
Botton GA, Guo GY, Temmerman WM, Szotek Z, Humphreys CJ, Wang Y, Stocks GM, Nicholson DMC et al. ( 1996 ) . EELS studies of B2-type transition metal aluminides: experiment and theory . Materials Research Society Symposium - Proceedings . vol. 408 , 567 - 572 .
Xin Y, Brown PD, Boothroyd CB, Preston AR, Humphreys CJ, Cheng TS, Foxon CT, Andrianov AV et al. ( 1996 ) . TEM and PL characterization of MBE-grown epitaxial GaN/GaAs . Materials Research Society Symposium - Proceedings . vol. 423 , 311 - 316 .
Brown PD, Humphreys CJ ( 1996 ) . Scanning transmission electron beam induced conductivity investigation of a Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructure . Journal of Applied Physics vol. 80 , ( 4 ) 2527 - 2529 .
Etheridge J, Moodie AF, Humphreys CJ ( 1996 ) . Direct determination of phase from three-beam convergent-beam diffraction patterns of centrosymmetric crystals . Acta Crystallographica Section A: Foundations and advances . vol. 52 , c54 - c54 .
Harrowell RV ( 1996 ) . Missed opportunities for high-temperature superconductivity . Physics World vol. 9 , ( 8 ) 15 - 15 .
Botton GA, Guo GY, Temmerman WM, Humphreys CJ ( 1996 ) . Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure . Phys Rev B Condens Matter vol. 54 , ( 3 ) 1682 - 1691 .
Chen GS, Boothroyd CB, Humphreys CJ ( 1996 ) . Electron-beam induced crystallization transition in self-developing amorphous AIF<inf>3</inf> resists . Applied Physics Letters vol. 69 , ( 2 ) 170 - 172 .
Moodie AF, Etheridge J, Humphreys CJ ( 1996 ) . The symmetry of three-beam scattering equations: Inversion of three-beam diffraction patterns from centrosymmetric crystals . Acta Crystallographica Section A: Foundations of Crystallography vol. 52 , ( 4 ) 596 - 605 .
Loginov YY, Brown PD, Humphreys CJ ( 1996 ) . Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions . Physics of the Solid State vol. 38 , ( 4 ) 692 - 697 .
Loginov YY, Brown PD, Humphreys CJ ( 1996 ) . Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs . Physics of the Solid State vol. 38 , ( 2 ) 272 - 277 .
Chen Q, Knowles KM, Humphreys CJ, Wu XF ( 1996 ) . Atom positions in the R-phase unit cell in TiNi shape memory alloy . Journal of Materials Science vol. 31 , ( 16 ) 4227 - 4231 .
Loginov YY, Brown PD, Humphreys CJ ( 1996 ) . Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs . Inorganic Materials vol. 32 , ( 1 ) 22 - 25 .
Inkson BJ, Humphreys CJ ( 1996 ) . Dislocations at 120° order interfaces in TiAl . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 73 , ( 5 ) 1333 - 1345 .
Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ ( 1996 ) . Electron beam induced crystallisation in iron (III) fluoride . Materials Research Society Symposium - Proceedings . vol. 398 , 195 - 200 .
Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ et al. ( 1996 ) . Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method . MRS Internet Journal of Nitride Semiconductor Research vol. 1 ,
Inkson BJ, Humphreys CJ ( 1996 ) . High-resolution electron microscopy study of the junction between a coherent (111) and an incoherent (121) twin boundary in TiAl . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 73 , ( 6 ) 1647 - 1661 .
Peters MA, Humphreys CJ ( 1996 ) . Misfit control in NiTi/Ni2TiAl beta/beta ' alloys . STRUCTURAL INTERMETALLICS 1997 . 605 - 612 .
Walther T, Humphreys CJ, Cullis AG, Robbins DJ ( 1995 ) . Correlation between compositional fluctuations and surface undulations in strained layer epitaxy . Materials Science Forum vol. 196-201 , ( pt 1 ) 505 - 510 .
Boothroyd CB, Dunin-Borkowski RE, Stobbs WM, Humphreys CJ ( 1995 ) . Quantifying the effects of amorphous layers on image contrast using energy filtered transmission electron microscopy . Materials Research Society Symposium - Proceedings . vol. 354 , 495 - 500 .
Brown PD, Humphreys CJ ( 1995 ) . STEBIC revisited . Materials Research Society Symposium - Proceedings . vol. 354 , 425 - 430 .
Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T et al. ( 1995 ) . The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy . Journal of Crystal Growth vol. 156 , ( 3 ) 155 - 162 .
Wiezorek JMK, Humphreys CJ ( 1995 ) . On the hierarchy of planar fault energies in TiAl . Scripta Metallurgica et Materiala vol. 33 , ( 3 ) 451 - 458 .
Xin Y, Zhou W, Humphreys CJ ( 1995 ) . HREM studies of the (001) surface of YBa<inf>2</inf>Cu<inf>4</inf>O<inf>8</inf> . Physica C: Superconductivity and its applications vol. 249 , ( 3-4 ) 319 - 332 .
CAMPBELL J, HUMPHREYS C ( 1995 ) . A FRAMEWORK FOR THE FUTURE . MATERIALS WORLD vol. 3 , ( 6 ) 286 - 287 .
Wiezorek JMK, Botton G, Humphreys CJ, Fraser HL ( 1995 ) . A TEM study of dislocation decoration in gamma-TiAl . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 515 - 518 .
Morgan CJ, Boothroyd CB, Humphreys CJ ( 1995 ) . A comparative study of electron beam damage in crystalline and amorphous aluminium oxide . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 567 - 570 .
Walther T, Hetherington CJD, Humphreys CJ ( 1995 ) . A contribution to the quantitative comparison of experimental high-resolution electron micrographs and image simulations . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 53 - 56 .
Brown PD, Loginov YY, Boothroyd CB, Humphreys CJ ( 1995 ) . Artefacts within ion beam milled semiconductors . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 393 - 396 .
Brown PD, Humphreys CJ ( 1995 ) . Assessment of semiconductor epitaxial growth by transmission electron microscopy . Materials Science and Technology (United Kingdom) vol. 11 , ( 1 ) 54 - 65 .
Inkson BJ, Boothroyd CB, Humphreys CJ ( 1995 ) . Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase . Acta Metallurgica Et Materialia vol. 43 , ( 4 ) 1429 - 1438 .
Wiezorek JMK, Preston AR, Humphreys CJ ( 1995 ) . Column approximation effects on partial dislocation weak beam images . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 455 - 458 .
Loginov YY, Brown PD, Humphreys CJ ( 1995 ) . Control of point defects in semiconductors . Materials Research Society Symposium - Proceedings . vol. 373 , 529 - 534 .
Walther T, Humphreys CJ, Grimshaw MP, Churchill AC ( 1995 ) . Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 72 , ( 4 ) 1015 - 1030 .
Xin Y, Brown PD, Humphreys CJ ( 1995 ) . Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructures . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 87 - 90 .
Saifullah MSM, Boothroyd CB, Morgan CJ, Humphreys CJ ( 1995 ) . Electron beam nanolithography of FeF3 using a scanning transmission electron microscope . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 325 - 328 .
Wiezorek JMK, Court SA, Humphreys CJ ( 1995 ) . Experimental TEM and image simulation of 〈a〉 dislocations in Ti<inf>3</inf>Al . Materials Research Society Symposium - Proceedings . vol. 364 , 659 - 664 .
Yonenaga I, Brown PD, Burgess WG, Humphreys CJ ( 1995 ) . Faulted dipoles in Indium-doped GaAs . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 87 - 90 .
Inkson BJ, Humphreys CJ ( 1995 ) . HREM investigation of a {12̄1}<inf>L1o</inf> boundary in TiAl . Materials Research Society Symposium - Proceedings . vol. 364 , 605 - 610 .
Cullen SL, Morgan CJ, Boothroyd CB, Humphreys CJ ( 1995 ) . HREM lattice image simulations of circular cross-sectional multishell carbon nanotubes . Materials Research Society Symposium - Proceedings . vol. 359 , 247 - 252 .
Inkson BJ, Humphreys CJ ( 1995 ) . HREM observation of omega-phase in an industrial TiAl alloy . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 547 - 550 .
Inkson BJ, Humphreys CJ ( 1995 ) . High-resolution electron microscopy observation of a<sup>1</sup>/<inf>2</inf>(112) superdislocation in Tial . Philosophical Magazine Letters vol. 71 , ( 6 ) 307 - 312 .
Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR, Humphreys CJ ( 1995 ) . Measurement of low-order structure factors for silicon from zone-axis CBED patterns . Ultramicroscopy vol. 60 , ( 2 ) 311 - 323 .
Brown PD, Loginov YY, Stobbs WM, Humphreys CJ ( 1995 ) . Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 72 , ( 1 ) 39 - 57 .
Morgan CJ, Humphreys CJ ( 1995 ) . Model for estimating the stress induced during oxidation of sharp silicon structures . Materials Research Society Symposium - Proceedings . vol. 389 , 191 - 196 .
Wiezorek JM, Court SA, Humphreys CJ ( 1995 ) . On the dissociation of prism plane superdislocations in ti<inf>3</inf>al . Philosophical Magazine Letters vol. 72 , ( 6 ) 393 - 403 .
Loginov YY, Brown PD, Humphreys CJ ( 1995 ) . Point defect interactions in doped II-VI compounds under ion and electron beam irradiation . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 431 - 434 .
Xin Y, Brown PD, Schaublin RE, Humphreys CJ ( 1995 ) . Relaxation of (001)Si/Si1-xGex/Si heterostructures . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 183 - 186 .
Brown PD, Humphreys CJ ( 1995 ) . STEBIC of Si/Si1-xGex/Si and high voltage REBIC of CdTe . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 701 - 704 .
Brown PD, Humphreys CJ ( 1995 ) . STEBIC of Si/Si1-xGex/Si heterostructures . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 285 - 288 .
Walther T, Boothroyd CB, Humphreys CJ ( 1995 ) . Strain relaxation induced local crystal tilts at Si/SiGe interfaces in cross-sectional transmission electron microscope specimens . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 11 - 16 .
Loginov YY, Brown PD, Humphreys CJ ( 1995 ) . Tem investigation of point defect interactions in II-VI compounds . Materials Science Forum . vol. 196-201 , 1461 - 1466 .
Botton GA, Guo GY, Humphreys CJ ( 1995 ) . The bonding character of intermetallic alloys using EELS . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 535 - 538 .
Morgan CJ, Humphreys CJ ( 1995 ) . The dependence of the rate of electron beam damage in amorphous aluminium oxide on beam current density . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 579 - 582 .
Walther T, Humphreys CJ ( 1995 ) . The limitations of pattern recognition and displacement measurement techniques for evaluating HREM images of strained semiconductor interfaces . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 103 - 106 .
Peters MA, Botton GA, Humphreys CJ ( 1995 ) . The precipitation of beta' Ni2TiAl from Al-doped beta Ni-Ti alloys . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 451 - 454 .
Morgan CJ, Humphreys CJ ( 1995 ) . The proximity effect for electron beam lithography of aluminium oxide . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 575 - 578 .
Walther T, Schaublin RE, DuninBorkowski RE, Boothroyd CB, Humphreys CJ, Stobbs WM ( 1995 ) . The role of plasmon scattering in the quantitative contrast analysis of high-resolution lattice images of GaAs . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 195 - 198 .
Cherns D, Mylonas S, Chou CT, Wu J, Ashenford DE, Lunn B, Perovic DD, Humphreys CJ ( 1994 ) . Dislocation nucleation and propagation in semiconductor heterostructures . Scanning Microscopy . vol. 8 , 841 - 848 .
Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW, Humphreys CJ ( 1994 ) . Transmission electron microscopy investigations of II-VI/GaAs heterostructures . Journal of Crystal Growth vol. 138 , ( 1-4 ) 538 - 544 .
CHEN GS, MORGAN CJ, HUMPHREYS CJ ( 1994 ) . A study of proximity effects in AlF3 electron beam resists . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 1305 - 1306 .
INKSON BJ, HUMPHREYS CJ ( 1994 ) . An HREM study of 1/6<112> intrinsic dipole formation in a Ti-Al alloy . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 83 - 84 .
Burgess WG, Preston AR, Botton GA, Zaluzec NJ, Humphreys CJ ( 1994 ) . Benefits of energy filtering for advanced convergent beam electron diffraction patterns . Ultramicroscopy vol. 55 , ( 3 ) 276 - 283 .
Wiezorek JMK, Preston AR, Court SA, Fraser HL, Humphreys CJ ( 1994 ) . Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 69 , ( 2 ) 285 - 299 .
BROWN PD, HUMPHREYS CJ ( 1994 ) . Defect anisotropy in (001) oriented sphalerite heteroepitaxial layers . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 149 - 150 .
BOTTON GA, HUMPHREYS CJ ( 1994 ) . EELS near edge structures in B2 intermetallics: A systematic series . ELECTRON MICROSCOPY 1994, VOL 1 . 631 - 632 .
ALLEN RM, CHEN GS, HUMPHREYS CJ ( 1994 ) . Electron beam damage in amorphous AlF3. A study of mass loss vs time . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 1307 - 1308 .
WHITE RS, HUMPHREYS CJ ( 1994 ) . Famines and cataclysmic volcanism . Geology Today vol. 10 , ( 5 ) 181 - 185 .
BOTTON GA, BURNELL G, HUMPHREYS CJ, YADAV T, WITHERS JC ( 1994 ) . From carbon socks to web-like wires: The microstructure of multi-metal filled carbon nanostructures by TEM and EELS . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 321 - 322 .
Cullen SL, Boothroyd CB, Humphreys CJ ( 1994 ) . Interpretation of the {100} fringes in lattice images from the centre of carbon nanotubes . Ultramicroscopy . vol. 56 , 127 - 134 .
CULLEN SL, BOTTON G, HUMPHREYS CJ ( 1994 ) . Momentum transfer dependence of the low energy loss distribution of carbon nanotubes . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 311 - 312 .
BURGESS W, SAUNDERS M, BIRD DM, PRESTON AR, ZALUZEC NJ, HUMPHREYS CJ ( 1994 ) . Structure factor determination in germanium by zone axis CBED . ELECTRON MICROSCOPY 1994, VOL 1 . 849 - 850 .
WALTHER T, BOOTHROYD CB, HUMPHREYS CJ, CULLIS AG ( 1994 ) . The effect of thin crystal strain relaxation on high-resolution images of Si/Si0.8Ge0.2 quantum wells . ELECTRON MICROSCOPY 1994, VOL 1 . 365 - 366 .
Chen GS, Boothroyd CB, Humphreys CJ ( 1993 ) . Novel fabrication method for nanometer-scale silicon dots and wires . Applied Physics Letters vol. 62 , ( 16 ) 1949 - 1951 .
INKSON BJ, BOOTHROYD CB, HUMPHREYS CJ ( 1993 ) . Boron segregation in a (Fe, V, B) TiAl based alloy . The European Physical Journal Special Topics . vol. 03 ,
ALLEN RM, LLOYD SJ, HUMPHREYS CJ ( 1993 ) . A STUDY OF SAMPLE THICKNESS DEPENDENCE IN ELECTRON-BEAM HOLE-DRILLING OF INORGANIC MATERIALS . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 87 - 90 .
SAUNDERS M, BIRD DM, ZALUZEC NJ, BURGESS WG, HUMPHREYS CJ ( 1993 ) . ACCURATE STRUCTURE FACTOR REFINEMENT FROM ZONE-AXIS CBED PATTERNS . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 125 - 128 .
MORGAN CJ, KIRKLAND AI, HUMPHREYS CJ ( 1993 ) . AN HREM INVESTIGATION OF THE DIAMOND HEXAGONAL PHASE IN A SILICON CONE FROM A VACUUM MICROELECTRONIC DEVICE . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 267 - 270 .
Inkson BJ, Boothroyd CB, Humphreys CJ ( 1993 ) . Boron segregation in a (Fe, V, B) TiAl based alloy . Journal De Physique . vol. 3 , 397 - 402 .
PRESTON AR, BURGESS WG, PICKUP CJ, HUMPHREYS CJ ( 1993 ) . DEBYE-WALLER FACTOR DETERMINATION FROM LACBED PATTERNS . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 145 - 148 .
WIEZOREK JMK, HUMPHREYS CJ ( 1993 ) . DETERMINATION OF STACKING-FAULT ENERGIES OF THE INTERMETALLIC TI-52AT-PERCENT AL . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 445 - 448 .
CHEN GS, BOOTHROYD CB, HUMPHREYS CJ ( 1993 ) . DIRECT ELECTRON-BEAM FABRICATION OF NANOMETER-SCALE SILICON COLUMNS . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 503 - 508 .
CHEN GS, BOOTHROYD CB, HUMPHREYS CJ ( 1993 ) . ELECTRON-INDUCED CRYSTALLIZATION IN ALUMINUM TRIFLUORIDE . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 369 - 372 .
HUMPHREYS CJ ( 1993 ) . ELECTRON-MICROSCOPE INVESTIGATIONS OF HETEROSTRUCTURES, NANOSTRUCTURES AND MISFIT DISLOCATIONS . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 441 - 448 .
White RS, Humphreys C ( 1993 ) . Evolution and religion [3] . Nature vol. 366 , ( 6453 )
BROWN PD, KIRKLAND A, HUMPHREYS CJ ( 1993 ) . HIGH-RESOLUTION PROFILE IMAGING OF (HG, MN)TE . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 209 - 212 .
CULLEN SL, BOTTON G, KIRKLAND AI, BROWN PD, HUMPHREYS CJ ( 1993 ) . INVESTIGATIONS OF STRUCTURE AND DEGRADATION OF CARBON NANOTUBES BY EELS AND HREM . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 79 - 82 .
Boothroyd CB, Humphreys CJ ( 1993 ) . Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscope . Ultramicroscopy . vol. 52 , 318 - 324 .
Inkson BJ, Boothroyd CB, Humphreys CJ ( 1993 ) . Microstructure of A γ-α<inf>2</inf>-β TiAl alloy containing iron and vanadium . Acta Metallurgica Et Materialia vol. 41 , ( 10 ) 2867 - 2876 .
BURGESS WG, SAUNDERS M, BIRD D, BOTTON G, PRESTON AR, HUMPHREYS CJ, ZALUZEC NJ ( 1993 ) . STRUCTURE FACTOR DETERMINATION BY ZONE-AXIS CBED . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 137 - 140 .
BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, CANNARD PJ, DAVIES GJ ( 1993 ) . THE EFFECT OF GROWTH INTERRUPTS ON CBE GROWN INP . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 373 - 376 .
BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, PERRIN SD, DAVIES GJ ( 1993 ) . THE EFFECT OF THE IMAGING ELECTRON-BEAM ON INP/INGAAS MQW STRUCTURES . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 493 - 496 .
MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S, HUMPHREYS C ( 1992 ) . ULTIMATE LIMITS OF LITHOGRAPHY . PHYSICS WORLD vol. 5 , ( 11 ) 28 - 32 .
Humphreys CJ, Bullough TJ, Devenish RW, Maher DM ( 1991 ) . 100 keV electron beam damage of metals, ceramics and semiconductors - implications for microanalysis and nanolithography . Institute of Physics Conference Series . vol. 119 , 319 - 324 .
Chen GS, Boothroyd CB, Humphreys CJ ( 1991 ) . Electron beam damage in AlF<inf>3</inf> . Institute of Physics Conference Series . vol. 119 , 325 - 328 .
Morgan CJ, Bailey SJ, Preston AR, Humphreys CJ ( 1991 ) . Electron beam nanolithography of sputtered amorphous Al<inf>2</inf>O<inf>3</inf> and the proximity effect . Institute of Physics Conference Series . vol. 119 , 503 - 506 .
Zhou X, Preston AR, Humphreys CJ ( 1991 ) . TEM study of nitrogen enhanced oxygen precipitation in nitrogen-doped Czochralski-grown silicon . Institute of Physics Conference Series . 211 - 216 .
HUMPHREYS CJ ( 1991 ) . THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST . QUARTERLY JOURNAL OF THE ROYAL ASTRONOMICAL SOCIETY vol. 32 , ( 4 ) 389 - 407 .
Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP, Salisbury IG ( 1991 ) . The origin of dislocations in multilayers . Journal de Physique III vol. 1 , ( 6 ) 1119 - 1130 .
Humphreys C ( 1991 ) . 100 keV electron beam damage of metals and oxides . Micron And Microscopica Acta vol. 22 , ( 1-2 ) 147 - 148 .
Humphreys CJ ( 1991 ) . Ceramic Superconductors . Concise Encyclopedia of Advanced Ceramic Materials ,
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ZHOU X, PRESTON AR, HUMPHREYS CJ ( 1991 ) . TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON . MICROSCOPY OF SEMICONDUCTING MATERIALS 1991 . vol. 117 , 211 - 216 .
Zhang JG, McCartney DG, Humphreys CJ ( 1990 ) . On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-T <inf>c</inf> superconductors . Superconductor Science and Technology vol. 3 , ( 4 ) 185 - 190 .
Humphreys C, Waddington WG ( 1990 ) . Crucifixion date [8] . Nature vol. 348 , ( 6303 )
Turner PS, Bullough TJ, Devenish RW, Maherj DM, Humphreys CJ ( 1990 ) . Nanometre hole formation in Mgo using electron beams . Philosophical Magazine Letters vol. 61 , ( 4 ) 181 - 193 .
Kvam EP, Maher DM, Humphreys CJ ( 1990 ) . Variation of dislocation morphology with strain in Ge<inf>x</inf>Si<inf>1−x</inf> epilayers on (100)Si . Journal of Materials Research vol. 5 , ( 9 ) 1900 - 1907 .
Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ, Bean JC ( 1989 ) . Tetragonal and monoclinic forms of Ge<inf>x</inf>Si<inf>1-x</inf> epitaxial layers . Applied Physics Letters vol. 54 , ( 3 ) 222 - 224 .
Devenish RW, Eaglesham DJ, Maher DM, Humphreys CJ ( 1989 ) . Nanolithography using field emission and conventional thermionic electron sources . Ultramicroscopy vol. 28 , ( 1-4 ) 324 - 329 .
Humphreys CJ ( 1989 ) . Radiation effects . Ultramicroscopy vol. 28 , ( 1-4 ) 357 - 358 .
Humphreys C ( 1989 ) . Controlling crystal growth . Nature vol. 341 , ( 6244 )
Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Eaglesham DJ, Bean JC ( 1989 ) . Dislocation nucleation near the critical thickness in GeSi/Si strained layers . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 59 , ( 5 ) 1059 - 1073 .
Humphreys C ( 1989 ) . Materials Science and Engineering in Britain . Angewandte Chemie International Edition in English vol. 28 , ( 8 ) 1077 - 1078 .
Humphreys C ( 1989 ) . Materials science and engineering in Britain . Advanced Materials vol. 1 , ( 8-9 ) 249 - 250 .
Eaglesham DJ, Maher DM, Kvam EP, Bean JC, Humphreys CJ ( 1989 ) . New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers . Physical Review Letters vol. 62 , ( 2 ) 187 - 190 .
Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK, Bean JC ( 1988 ) . X-ray topography of the coherency breakdown in Ge<inf>x</inf>Si <inf>1-x</inf>/Si(100) . Applied Physics Letters vol. 53 , ( 21 ) 2083 - 2085 .
Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL ( 1988 ) . CBED and CBIM from semiconductors and superconductors . Ultramicroscopy vol. 26 , ( 1-2 ) 13 - 23 .
Humphreys CJ, Maher DM, Fraser HL, Eaglesham DJ ( 1988 ) . Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 58 , ( 5 ) 787 - 798 .
Huxford NP, Eaglesham DJ, Humphreys CJ ( 1988 ) . Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>superconductors (Nature (1987) 329, (812-813)) . Nature vol. 331 , ( 6153 )
Eaglesham DJ, Humphreys CJ, Alford NMN, Clegg WJ, Harmer MA, Birchall JD ( 1988 ) . High temperature superconducting ceramics . Materials Science and Engineering B vol. 1 , ( 3-4 ) 229 - 235 .
Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ, Godfrey DJ ( 1988 ) . Plasma anodisation of silicon for advanced VLSI . European Solid-State Device Research Conference . C4393 - C4396 .
Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S, Ries M ( 1988 ) . Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity . Angewandte Chemie International Edition in English vol. 27 , ( 7 ) 927 - 929 .
Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G, Marchionna M ( 1987 ) . Analytical electron microscopy of [Ni<inf>38</inf>Pt<inf>6</inf>(CO) <inf>48</inf>H]<sup>5-</sup> . Journal of the Chemical Society, Chemical Communications ( 10 ) 765 - 766 .
Maher DM, Fraser HL, Humphreys CJ, Knoell RV, Bean JC ( 1987 ) . Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction . Applied Physics Letters vol. 50 , ( 10 ) 574 - 576 .
Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA, Birchall JD ( 1987 ) . New phases in the superconducting Y:Ba:Cu:O system . Applied Physics Letters vol. 51 , ( 6 ) 457 - 459 .
Berger SD, Salisbury IG, Milne RH, Imeson D, Humphreys CJ ( 1987 ) . Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation . Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties vol. 55 , ( 3 ) 341 - 358 .
Waddington WG, Rez P, Grant IP, Humphreys CJ ( 1987 ) . Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals (Physical Review B (1986) 34, (1467)) . Physical Review B vol. 35 , ( 10 )
Huxford NP, Eaglesham DJ, Humphreys CJ ( 1987 ) . Limits on quantitative information from high-resolution electron microscopy of YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf> superconductors . Nature vol. 329 , ( 6142 ) 812 - 813 .
Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NMN, Birchall JD ( 1987 ) . THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y<inf>1</inf>Ba<inf>2</inf>Cu<inf>3</inf>O<inf>9‐y</inf> . Advanced Ceramic Materials vol. 2 , ( 3 B ) 662 - 667 .
Bullock JF, Titchmarsh JM, Humphreys CJ ( 1986 ) . STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES . Semiconductor Science and Technology vol. 1 , ( 6 ) 342 - 345 .
Bullock JF, Titchmarsh JM, Humphreys CJ ( 1986 ) . STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures . Semiconductor Science and Technology vol. 1 , ( 6 ) 343 - 345 .
Waddington WG, Rez P, Grant IP, Humphreys CJ ( 1986 ) . White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals . Physical Review B vol. 34 , ( 3 ) 1467 - 1473 .
Bullock JF, Humphreys CJ, Mace AJW, Bishop HE, Titchmarsh JM ( 1985 ) . CRYSTALLINE EFFECTS IN THE ANALYSIS OF SEMICONDUCTOR MATERIALS USING AUGER ELECTRONS OR X-RAYS . Institute of Physics Conference Series . 405 - 410 .
Fraser HL, Maher DM, Humphreys CJ, Hetherington CJD, Knoell RV, Bean JC ( 1985 ) . DETECTION OF LOCAL STRAINS IN STRAINED LAYER SUPERLATTICES . Institute of Physics Conference Series . 307 - 312 .
Davies RA, Kelly MJ, Kerr TM, Hetherington CJD, Humphreys CJ ( 1985 ) . Geometric and electronic structure of a semiconductor superlattice . Nature vol. 317 , ( 6036 ) 418 - 419 .
Timsit RS, Waddington WG, Humphreys CJ, Hutchison JL ( 1985 ) . Structure of the Al/Al<inf>2</inf>O<inf>3</inf> interface . Applied Physics Letters vol. 46 , ( 9 ) 830 - 832 .
Humphreys CJ ( 1985 ) . Surface physics: Hopping atoms in crystal growth . Nature vol. 317 , ( 6032 )
Timsit RS, Waddington WG, Humphreys CJ, Hutchison JL ( 1985 ) . Examination of the Al/Al<inf>2</inf>O<inf>3</inf> interface by high-resolution electron microscopy . Ultramicroscopy vol. 18 , ( 1-4 ) 387 - 394 .
Humphreys CJ ( 1984 ) . Crytallography: Defects in reduced oxides . Nature vol. 309 , ( 5966 )
Humphreys CJ ( 1984 ) . MICRO-84: Electron microscopy 50 years on . Nature vol. 311 , ( 5981 )
Salisbury IG, Timsit RS, Berger SD, Humphreys CJ ( 1984 ) . Nanometer scale electron beam lithography in inorganic materials . Applied Physics Letters vol. 45 , ( 12 ) 1289 - 1291 .
Spence JCH, Humphreys CJ ( 1984 ) . CHANNELLING RADIATION IN ELECTRON MICROSCOPY . Optik (Jena) vol. 66 , ( 3 ) 225 - 242 .
Cherns D, Hetherington CJD, Humphreys CJ ( 1984 ) . The atomic structure of the NiSi<inf>2</inf>-(001)Si interface . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 49 , ( 1 ) 165 - 177 .
Hetherington CJD, Cherns D, Humphreys CJ ( 1983 ) . ATOMIC STRUCTURE OF THE NiSi//2/(001) Si INTERFACE . Institute of Physics Conference Series . 89 - 94 .
Humphreys CJ, Waddington WG ( 1983 ) . Dating the crucifixion . Nature vol. 306 , ( 5945 ) 743 - 746 .
Mochel ME, Humphreys CJ, Eades JA, Mochel JM, Petford AM ( 1983 ) . Electron beam writing on a 20-Å scale in metal β-aluminas . Applied Physics Letters vol. 42 , ( 4 ) 392 - 394 .
Humphreys CJ ( 1983 ) . HIGH VOLTAGE ELECTRON MICROSCOPY - PRESENT ACHIEVEMENTS AND FUTURE PROSPECTS . Lawrence Berkeley Laboratory (Report) LBL . 1 - 4 .
Hull R, Smith DJ, Humphreys CJ ( 1983 ) . A high‐resolution electron microscopic study of defects in sodium β′″‐alumina . Journal of Microscopy vol. 130 , ( 2 ) 203 - 214 .
Hull R, Petford A, Humphreys C, Smith D ( 1983 ) . High resolution electron microscopy of silver β- and β″ -aluminas . Solid State Ionics vol. 9-10 , ( PART 1 ) 181 - 186 .
Humphreys CJ ( 1981 ) . Fundamental concepts of stem imaging . Ultramicroscopy vol. 7 , ( 1 ) 7 - 12 .
Humphreys CJ, Spence JCH ( 1981 ) . RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY . Optik (Jena) vol. 58 , ( 2 ) 125 - 142 .
Spencer JP, Humphreys CJ ( 1980 ) . A multiple scattering transport theory for electron . Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties vol. 42 , ( 4 ) 433 - 451 .
Sellar JR, Imeson D, Humphreys CJ ( 1980 ) . The combined convergent beam/critical voltage technique in high voltage electron microscopy . Micron (1969) vol. 11 , ( 3-4 ) 241 - 242 .
Humphreys CJ ( 1979 ) . The scattering of fast electrons by crystals . Reports on Progress in Physics vol. 42 , ( 11 ) 1825 - 1887 .
Humphreys CJ, Drummond RA, Hart-Davis A, Butler EP ( 1977 ) . Additional image peaks in the high resolution imaging of dislocations . Philosophical Magazine vol. 35 , ( 6 ) 1543 - 1555 .
Humphreys CJ, Drummond RA ( 1977 ) . HIGH RESOLUTION IMAGING OF DEFECTS . Inst Phys Conf Ser . 241 - 246 .
Rez P, Humphreys CJ, Whelan MJ ( 1977 ) . The distribution of intensity in electron diifraction patterns due to phonon scattering . Philosophical Magazine vol. 35 , ( 1 ) 81 - 96 .
Rez P, Humphreys CJ, Whelan MJ ( 1976 ) . DISTRIBUTION OF PHONON SCATTERED ELECTRONS IN HIGH ENERGY ELECTRON DIFFRACTION PATTERNS . 373 - 376 .
Humphreys CJ, Hart-Davis A ( 1976 ) . SPURIOUS PEAKS IN WEAK-BEAM IMAGES . 409 - 412 .
Rolf Sandström, Spencer JF, Humphreys CJ ( 1974 ) . A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy . Journal of Physics D: Applied Physics vol. 7 , ( 7 ) 1030 - 1046 .
Spencer JP, Booker GR, Humphreys CJ, Joy DC ( 1974 ) . ELECTRON CHANNELLING PATTERNS FROM DEFORMED CRYSTALS . 919 - 925 .
Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R et al. ( 1973 ) . SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972 .
Spencer JP, Humphreys CJ, Hirsch PB ( 1972 ) . A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons . Philosophical Magazine vol. 26 , ( 1 ) 193 - 213 .
Lally JS, Humphreys CJ, Metherell AJF, Fisher RM ( 1972 ) . The critical voltage effect in high voltage electron microscopy . Philosophical Magazine vol. 25 , ( 2 ) 321 - 343 .
Humphreys CJ ( 1972 ) . The optimum voltage in very high voltage electron microscopy . Philosophical Magazine vol. 25 , ( 6 ) 1459 - 1472 .
Humphreys CJ, Thomas LE, Lally JS, Fisher RM ( 1971 ) . Maximizing the penetration in high voltage electron microscopy . Philosophical Magazine vol. 23 , ( 181 ) 87 - 114 .
Humphreys CJ, Lally JS ( 1970 ) . Aspects of Bloch-wave channeling in high-voltage electron microscopy . Journal of Applied Physics vol. 41 , ( 1 ) 232 - 235 .
Tanner BK, Humphreys CJ ( 1970 ) . High resolution divergent-beam X-ray topography . Journal of Physics D: Applied Physics vol. 3 , ( 7 ) 1144 - 1146 .
Thomas LE, Humphreys CJ ( 1970 ) . Kikuchi patterns in a high voltage electron microscope . physica status solidi (a) vol. 3 , ( 3 ) 599 - 615 .
Thomas LE, Humphreys CJ, Duff WR, Grubb DT ( 1970 ) . RADIATION DAMAGE OF POLYMERS IN THE MILLION VOLT ELECTRON MICROSCOPE . Radiation Effects vol. 3 , ( 1-2 ) 89 - 91 .
Humphreys CJ, Whelan MJ ( 1969 ) . Inelastic scattering of fast electrons by crystals . Philosophical Magazine vol. 20 , ( 163 ) 165 - 172 .
Humphreys CJ, Hirsch PB ( 1968 ) . Absorption parameters in electron diffraction theory . Philosophical Magazine vol. 18 , ( 151 ) 115 - 122 .
Humphreys CJ, Howie A, Booker GR ( 1967 ) . Some electron diffraction contrast effects at planar defects in crystals . Philosophical Magazine vol. 15 , ( 135 ) 507 - 522 .