Publications: Prosir Colin Humphreys

Weng Z, Wingfield B, Evans P, Baginski P, Kainth J, Nikolaenko A, Lee LY, Baginska J et al. ( 2024 ) . Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers . ACS Applied Electronic Materials

Weng Z, Dixon S, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP ( 2023 ) . Wafer-scale transfer-free graphene as an ITO replacement for OLEDs . Conference: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) vol. 00 , 94 - 95 .

Humphreys C ( 2022 ) . From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene . Microscopy and Microanalysis vol. 28 , ( S1 ) 2736 - 2737 .

Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ, Humphreys CJ ( 2022 ) . Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene . Physical Review B vol. 105 , ( 16 )

Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP ( 2022 ) . Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022) . Advanced Optical Materials vol. 10 , ( 3 ) 2270012 - 2270012 .

Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ . Electron beam damage in titanium dioxide films . 167 - 170 .

Humphreys C . Electron microscopy and analysis: the future . 31 - 34 .

Pekarskaya E, Botton GA, Jones CN, Humphreys CJ . Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy . 549 - 552 .

Natusch MKH, Botton GA, Humphreys CJ, Krivanek OL . Modelling of electron energy-loss spectroscopy detection limits . 339 - 342 .

Hölzl M, Bottond GA, Nelhiebel M, Humphreys CJ, Jouffrey B, Grogger W, Hofer F, Schattschneider P . Observation of the mixed dynamic form factor in the Ag M4,5-edge . 171 - 174 .

Walther T, Humphreys CJ . Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging . 303 - 306 .

Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ, Dunstan DJ ( 2022 ) . Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials . Physical Review B vol. 105 , ( 2 ) Article 024103 ,

Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT, Humphreys CJ ( 2022 ) . The relationship between epitaxial growth, defect microstructure and luminescence in GaN . Electron Microscopy and Analysis 1997 , Taylor & Francis

Campbell LCI, Foord DT, Humphreys CJ . ‘Nano-machining’ using a focused ion beam . 657 - 660 .

Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP ( 2021 ) . Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes . Advanced Optical Materials2101675 - 2101675 .

Pristovsek M, Frentrup M, Zhu T, Kusch G, Humphreys CJ ( 2021 ) . X-ray characterisation of the basal stacking fault densities of (112̄2) GaN . CrystEngComm vol. 23 , ( 35 ) 6059 - 6069 .

Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C et al. ( 2021 ) . Mechanical Properties of Graphene . Applied Physics Reviews

Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ, Humphreys CJ ( 2021 ) . Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)] . Physical Review B vol. 103 , ( 11 ) 119901 - 119901 .

Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC, Eraser HL ( 2021 ) . Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100) . Microscopy of Semiconducting Materials, 1987 , Taylor & Francis

Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG et al. ( 2020 ) . Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites . Scientific Reports vol. 10 , Article 15618 ,

Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM et al. ( 2020 ) . Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films . ACS Nano

Humphreys CJ, Bullough TJ, Devenish RW, Maher DM, Turner PS ( 2020 ) . The interaction of electron beams with solids - Some new effects . Microscopy and Microanalysis vol. 48 , ( 4 ) 788 - 789 .

S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R, Nath DN ( 2020 ) . Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme . Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 38 , ( 3 )

Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D, Humphreys C ( 2020 ) . Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers . Physical Review B: Condensed Matter and Materials Physics vol. 101 , Article 125421 ,

Halsall MP, Crowe I, Oliver R, Kappers MJ, Humphreys CJ ( 2020 ) . Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation) . Conference: Gallium Nitride Materials and Devices XV

Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN ( 2019 ) . A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias . physica status solidi (a) – applications and materials science vol. 217 , ( 7 )

Smith JP, Eccleston W, Brown PD, Humphreys CJ ( 2019 ) . Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon . Journal of The Electrochemical Society vol. 146 , ( 1 ) 306 - 312 .

Zhou B, Das A, Kappers M, Oliver R, Humphreys C, Krause S ( 2019 ) . InGaN as a substrate for AC photoelectrochemical imaging . Sensors

Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY et al. ( 2019 ) . Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals . ACS Applied Energy Materials vol. 2 , ( 10 ) 6998 - 7004 .

Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ, Humphreys C ( 2019 ) . 3D strain in 2D materials: to what extent is monolayer graphene graphite? . Physical Review Letters vol. 123 , 135501 - 135501 .

Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL et al. ( 2019 ) . Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates . Journal of Applied Physics vol. 125 , ( 22 )

Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G et al. ( 2019 ) . Optical and structural properties of dislocations in InGaN . Journal of Applied Physics vol. 125 , ( 16 )

Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA, Dawson P ( 2019 ) . Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength . JAPANESE JOURNAL OF APPLIED PHYSICS vol. 58 , Article ARTN SCCB09 ,

Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ, Dunstan DJ ( 2019 ) . Effect of humidity on the interlayer interaction of bilayer graphene . Physical Review B vol. 99 , ( 4 )

Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R et al. ( 2018 ) . Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model . IEEE Transactions on Electron Devices vol. 66 , ( 1 ) 613 - 618 .

Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA, Humphreys CJ ( 2018 ) . What is red? On the chromaticity of orange-red InGaN/GaN based LEDs . Journal of Applied Physics vol. 124 , ( 18 )

Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ, Humphreys CJ ( 2018 ) . Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells . ACS Photonics vol. 5 , ( 11 ) 4437 - 4446 .

Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA, Dawson P ( 2018 ) . Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities . Physical Review B vol. 98 , ( 15 )

Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R, Dawson P ( 2018 ) . Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells . Materials vol. 11 , ( 9 )

Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ, Wallis DJ ( 2018 ) . Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN . Journal of Applied Physics vol. 124 , ( 10 )

Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ et al. ( 2018 ) . Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs . Microscopy and Microanalysis vol. 24 , ( S1 ) 4 - 5 .

Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ et al. ( 2018 ) . Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers . Journal of Applied Physics vol. 124 , ( 5 )

Humphreys C, Waddington G ( 2018 ) . Response to letter from Wayne Osborn . Astronomy and Geophysics vol. 59 , ( 4 )

Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C, Thayne IG ( 2018 ) . Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs . Electronics Letters vol. 54 , ( 15 ) 947 - 949 .

Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P et al. ( 2018 ) . Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs . Journal of Applied Physics vol. 123 , ( 18 )

Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M et al. ( 2018 ) . Effect of stacking faults on the photoluminescence spectrum of zincblende GaN . Journal of Applied Physics vol. 123 , ( 18 )

Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ, Dawson P ( 2018 ) . Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures . Journal of Physics Condensed Matter vol. 30 , ( 17 )

Massabuau FC-P, Chen P, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ et al. ( 2018 ) . Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties . Conference: Gallium Nitride Materials and Devices XIII vol. 10532 ,

Humphreys C, Waddington G ( 2018 ) . Illuminating theory on early solar eclipse . Astronomy and Geophysics vol. 59 , ( 1 )

Nixon D, Humphreys C, Waddington G ( 2018 ) . Moon village: show us the money . Astronomy & Geophysics vol. 59 , ( 1 ) 1.8 - 1.8 .

Sharma N, Kappers M, Barnard J, Vickers M, Humphreys C . Chemical mapping of InGaN/GaN LEDs . 263 - 266 .

Keast VJ, Sharma N, Humphreys CJ . Energy-loss spectroscopy of GaN alloys and quantum wells . 259 - 262 .

Elliott SL, Broom RF, Humphreys CJ . SEM doping contrast at a Si pn junction . 431 - 434 .

Barnard JS, Vickers ME, Kappers MJ, Thrush EJ, Humphreys CJ . A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM . 57 - 60 .

Makaronidis G, McAleese C, Barnard JS, Humphreys CJ . Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD . 309 - 312 .

Barnard JS, Kappers MJ, Thrush EJ, Humphreys CJ . Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM . 281 - 284 .

Kazemian P, Schönjahn C, Humphreys CJ . Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope . 593 - 596 .

Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL et al. ( 2018 ) . Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors . Journal of Applied Physics vol. 123 , ( 2 )

Kazemian P, Schönjahn C, Humphreys CJ ( 2018 ) . Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope . Microscopy of Semiconducting Materials 2003 ,

Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA, Humphreys CJ ( 2017 ) . The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes . Journal of Applied Physics vol. 122 , ( 23 )

Xiu H, Thrush EJ, Zhao L, Phillips A, Humphreys CJ ( 2017 ) . Degradation of in GaN/GaN Laser Diodes Investigated By Cross-Sectional Electron Beam Induced Current Imaging . Conference: 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)38 - 44 .

Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN ( 2017 ) . Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer . IEEE Transactions on Electron Devices vol. 64 , ( 12 ) 4868 - 4874 .

Smeeton T, Humphreys C ( 2017 ) . Perspectives on Electronic and Photonic Materials . Springer Handbook of Electronic and Photonic Materials , Springer Nature

Humphreys C, Waddington G ( 2017 ) . Solar eclipse of 1207 BC helps to date pharaohs . Astronomy & Geophysics vol. 58 , ( 5 ) 5.39 - 5.42 .

Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ, Johnson PA ( 2017 ) . Machine Learning Predicts Laboratory Earthquakes . Geophysical Research Letters vol. 44 , ( 18 ) 9276 - 9282 .

Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ et al. ( 2017 ) . X-ray diffraction analysis of cubic zincblende III-nitrides . Journal of Physics D vol. 50 , ( 43 )

Humphreys C ( 2017 ) . Ahmed Zewail — A Towering Visionary . Personal and Scientific Reminiscences , World Scientific Publishing

Rouet-Leduc B, Hulbert C, Barros K, Lookman T, Humphreys CJ ( 2017 ) . Automatized convergence of optoelectronic simulations using active machine learning . Applied Physics Letters vol. 111 , ( 4 )

Floros K, Li X, Guiney I, Cho S, Hemakumara D, Wallis DJ, Wasige E, Moran DAJ et al. ( 2017 ) . Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks . physica status solidi (a) – applications and materials science . vol. 214 ,

Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE et al. ( 2017 ) . Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties . Nano Letters vol. 17 , ( 8 ) 4846 - 4852 .

Eblabla A, Benakaprasad B, Li X, Wallis DJ, Guiney I, Humphreys C, Elgaid K ( 2017 ) . Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC) . Conference: 2017 18th International Radar Symposium (IRS)1 - 7 .

Massabuau F, Kappers M, Humphreys C, Oliver R ( 2017 ) . Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth . physica status solidi (b) . vol. 254 ,

Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I et al. ( 2017 ) . Structural impact on the nanoscale optical properties of InGaN core-shell nanorods . Applied Physics Letters vol. 110 , ( 17 )

Church SA, Hammersley S, Mitchell PW, Kappers MJ, Sahonta SL, Frentrup M, Nilsson D, Ward PJ et al. ( 2017 ) . Photoluminescence studies of cubic GaN epilayers . physica status solidi (b) . vol. 254 ,

Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ et al. ( 2017 ) . All-GaN-Integrated Cascode Heterojunction Field Effect Transistors . IEEE Transactions on Power Electronics vol. 32 , ( 11 ) 8743 - 8750 .

Guiney I, Thomas S, Humphreys CJ ( 2017 ) . Single-step manufacturing process for the production of graphene-V/III LED heterostructures . Proceedings of SPIE--the International Society for Optical Engineering . Conference: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI vol. 10124 ,

Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL et al. ( 2017 ) . The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem . Ultramicroscopy vol. 176 , 93 - 98 .

Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ et al. ( 2017 ) . Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth . Journal of Crystal Growth vol. 459 , 185 - 188 .

Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J et al. ( 2017 ) . Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001) . Journal of Applied Physics vol. 121 , ( 4 )

Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ et al. ( 2017 ) . Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure . Crystal Growth & Design vol. 17 , ( 2 ) 474 - 482 .

Massabuau F, Piot N, Frentrup M, Wang X, Avenas Q, Kappers M, Humphreys C, Oliver R ( 2017 ) . X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface . physica status solidi (b) . vol. 254 ,

Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ et al. ( 2017 ) . Carrier localization in the vicinity of dislocations in InGaN . Journal of Applied Physics vol. 121 , ( 1 )

Humphreys CJ ( 2017 ) . Preventing cracking in the growth of low-cost GaN LEDs on large-area Si . ICF 2017 - 14th International Conference on Fracture . vol. 2 , 1280 - 1282 .

Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D et al. ( 2016 ) . Impact of high energy electrons on nitrides for nanocathodoluminescence . European Microscopy Congress 2016: Proceedings , Wiley

Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I et al. ( 2016 ) . Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping . European Microscopy Congress 2016: Proceedings , Wiley

Zhu D, Humphreys CJ ( 2016 ) . Solid-State Lighting Based on Light Emitting Diode Technology . Optics in Our Time , Springer Nature

Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ et al. ( 2016 ) . Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence . Applied Physics Letters vol. 109 , ( 23 )

Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ et al. ( 2016 ) . Dielectric response of wurtzite gallium nitride in the terahertz frequency range . Solid State Communications vol. 247 , 68 - 71 .

Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ, Foxon CT ( 2016 ) . Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source . Journal of Crystal Growth vol. 456 , 151 - 154 .

Schulz S, Tanner DSP, O'Reilly EP, A. M, Tang F, Griffiths JT, Oehler F, Kappers MJ et al. ( 2016 ) . Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells . Applied Physics Letters vol. 109 , ( 22 )

Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ et al. ( 2016 ) . A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates . Sci Technol Adv Mater vol. 17 , ( 1 ) 736 - 743 .

Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D et al. ( 2016 ) . Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold . Journal of Applied Physics vol. 120 , ( 16 )

Benakaprasad B, Eblabla A, Li X, Elgaid K, Wallis DJ, Guiney I, Humphreys C ( 2016 ) . Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC . Conference: 2016 46th European Microwave Conference (EuMC)413 - 416 .

Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ et al. ( 2016 ) . Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence . Journal of Applied Physics vol. 120 , ( 8 )

Presa S, Maaskant PP, Kappers MJ, Humphreys CJ, Corbett B ( 2016 ) . Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes . AIP Advances vol. 6 , ( 7 )

Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ et al. ( 2016 ) . High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer . Scientific Reports vol. 6 , ( 1 )

Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D et al. ( 2016 ) . Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0) . Semiconductor Science and Technology vol. 31 , ( 8 )

Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ, Oliver RA ( 2016 ) . Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells . Applied Physics Letters vol. 108 , ( 25 )

Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F, Meyer T ( 2016 ) . Scalable semipolar gallium nitride templates for high-speed LEDs . SPIE Newsroom

Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. ( 2016 ) . Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique . Applied Physics Letters vol. 108 , ( 21 )

BRAUNSTEIN P, DEVENISH R, GALLEZOT P, HEATON BT, HUMPHREYS CJ, KERVENNAL J, MULLEY S, RIES M ( 2016 ) . ChemInform Abstract: Silica‐Supported Fe‐Pd Bimetallic Particles ‐ Formation from Mixed‐Metal Clusters and Catalytic Activity . ChemInform vol. 19 , ( 42 ) no - no .

Dawson P, Schulz S, Oliver RA, Kappers MJ, Humphreys CJ ( 2016 ) . The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells . Journal of Applied Physics vol. 119 , ( 18 )

Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S et al. ( 2016 ) . Characterization of p-GaN1−x As x /n-GaN PN junction diodes . Semiconductor Science and Technology vol. 31 , ( 6 )

Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C ( 2016 ) . Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016) . physica status solidi (b) vol. 253 , ( 5 ) 1024 - 1024 .

Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C et al. ( 2016 ) . The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells . Journal of Applied Physics vol. 119 , ( 17 )

Rouet-Leduc B, Barros K, Lookman T, Humphreys CJ ( 2016 ) . Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning . Scientific Reports vol. 6 , ( 1 )

Pristovsek M, Humphreys CJ, Bauer S, Knab M, Thonke K, Kozlowski G, O’Mahony D, Maaskant P et al. ( 2016 ) . Comparative study of (0001) and InGaN based light emitting diodes . Japanese Journal of Applied Physics . vol. 55 ,

Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA, Humphreys CJ ( 2016 ) . Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures . physica status solidi (c)

Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M, Lee KB, Zaidi Z et al. ( 2016 ) . Impact of Buffer Charge on the Reliability of Carbon Doped AIGaN/GaN-on-Si HEMTs . Conference: 2016 IEEE International Reliability Physics Symposium (IRPS)

Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F et al. ( 2016 ) . Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates . Journal of Crystal Growth vol. 440 , 69 - 75 .

Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S et al. ( 2016 ) . Subthreshold Mobility in AlGaN/GaN HEMTs . IEEE Transactions on Electron Devices vol. 63 , ( 5 ) 1861 - 1865 .

Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW et al. ( 2016 ) . Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods . Crystal Growth & Design vol. 16 , ( 4 ) 1907 - 1916 .

Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ et al. ( 2016 ) . Dislocation core structures in (0001) InGaN . Journal of Applied Physics vol. 119 , ( 10 )

Corbett B, Quan Z, Dinh DV, Kozlowski G, O'Mahony D, Akhter M, Schulz S, Parbrook P et al. ( 2016 ) . Development of semipolar (11-22) LEDs on GaN templates . Proceedings of SPIE--the International Society for Optical Engineering . Conference: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX vol. 9768 ,

Gîrgel I, Edwards PR, Le Boulbar E, Coulon P-M, Sahonta S-L, Allsopp DWE, Martin RW, Humphreys CJ et al. ( 2016 ) . Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes . Journal of Nanophotonics . vol. 10 , 016010 - 016010 .

Novikov SV, Staddon CR, Sahonta S, Oliver RA, Humphreys CJ, Foxon CT ( 2016 ) . Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source . physica status solidi (c) . vol. 13 , 217 - 220 .

Hammersley S, Dawson P, Kappers MJ, Massabuau FC, Frentrup M, Oliver RA, Humphreys CJ ( 2016 ) . Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs . physica status solidi (c) . vol. 13 , 262 - 265 .

Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D et al. ( 2016 ) . Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics . Applied Physics Letters vol. 108 , ( 7 )

Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ ( 2016 ) . A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers . Journal of Applied Physics vol. 119 , ( 5 )

Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA, Humphreys CJ ( 2016 ) . Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures . physica status solidi (c) . vol. 13 , 209 - 213 .

Dunn A, Spencer BF, Hardman SJO, Graham DM, Hammersley S, Davies MJ, Dawson P, Kappers MJ et al. ( 2016 ) . Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy . physica status solidi (c) . vol. 13 , 252 - 255 .

Christian GM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Massabuau FC, Oliver RA, Humphreys CJ ( 2016 ) . Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells . physica status solidi (c) . vol. 13 , 248 - 251 .

Miaja PF, Jiang S, Lee KB, Guiney I, Wallis DJ, Humphreys CJ, Houston PA, Forsyth AJ ( 2016 ) . Modelling the Closely-Coupled Cascode Switching Process . Conference: 2016 IEEE Energy Conversion Congress and Exposition (ECCE)1 - 8 .

Han Y, Zhu D, Zhu T, Humphreys CJ, Wallis DJ ( 2016 ) . Origins of hillock defects on GaN templates grown on Si(111) . Journal of Crystal Growth vol. 434 , 123 - 127 .

Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. ( 2016 ) . Terahertz Magnetospectroscopy Studies of an AlGaN/GaN Heterostructure . Conference: 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)1 - 2 .

Benakaprasad B, Eblabla A, Li X, Thayne I, Wallis DJ, Guiney I, Humphreys C, Elgaid K ( 2016 ) . Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology on GaN-on-Low Resistivity Silicon Substrates . Conference: 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)1 - 2 .

Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al. . Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure . Conference: Conference on Lasers and Electro-Optics

Rae K, Xie E, Foucher C, Guilhabert B, Ferriera R, Zhu D, Wallis DJ, Humphreys CJ et al. . Transfer printed multi-color integrated devices for visible light communication applications . Conference: Light, Energy and the Environment

Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E, Humphreys CJ ( 2016 ) . n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon . Journal of Materials Chemistry C vol. 4 , ( 35 ) 8291 - 8296 .

Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO et al. ( 2015 ) . Dislocation core structures in Si-doped GaN . Applied Physics Letters vol. 107 , ( 24 )

Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C ( 2015 ) . Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire . physica status solidi (b) vol. 253 , ( 5 ) 834 - 839 .

Schulz S, Tanner DP, O'Reilly EP, A. M, Martin TL, Bagot PAJ, Moody MP, Tang F et al. ( 2015 ) . Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory . Physical Review B vol. 92 , ( 23 )

Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ, Oliver RA ( 2015 ) . Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN . Physical Review B vol. 92 , ( 24 )

Cho SJ, Roberts JW, Guiney I, Li X, Ternent G, Floros K, Humphreys CJ, Chalker PR et al. ( 2015 ) . A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor . Microelectronic Engineering . vol. 147 , 277 - 280 .

Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A et al. ( 2015 ) . Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping . Nano Letters vol. 15 , ( 11 ) 7639 - 7643 .

Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F et al. ( 2015 ) . Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes . AIP Advances vol. 5 , ( 10 )

Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA, Humphreys CJ ( 2015 ) . Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions . Applied Physics Letters vol. 107 , ( 13 )

Rae K, Xie EY, Trindade AJ, Guilhabert B, Ferreira R, McKendry JJD, Zhu D, Laurand N et al. ( 2015 ) . Integrated Dual-Color Ingan Light-Emitting Diode Array Through Transfer Printing . Conference: 2015 IEEE Photonics Conference (IPC)390 - 391 .

Harrowell RV ( 2015 ) . Missed opportunities for high-temperature superconductivity . Physics World vol. 9 , ( 8 ) 15 - 15 .

Pristovsek M, Frentrup M, Han Y, Humphreys CJ ( 2015 ) . Optimizing GaN () hetero‐epitaxial templates grown on () sapphire . physica status solidi (b) vol. 253 , ( 1 ) 61 - 66 .

Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ, Houston PA ( 2015 ) . Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant . Semiconductor Science and Technology vol. 30 , ( 10 )

Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K, Scholz F ( 2015 ) . Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers . physica status solidi (b) vol. 253 , ( 1 ) 46 - 53 .

Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ et al. ( 2015 ) . Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs . IEEE Transactions on Electron Devices vol. 62 , ( 8 ) 2464 - 2469 .

Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E et al. ( 2015 ) . Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing . Optics Express vol. 23 , ( 7 ) 9329 - 9338 .

Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M, Humphreys C ( 2015 ) . Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire . Journal of Crystal Growth vol. 415 , 170 - 175 .

Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ et al. ( 2015 ) . Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes . Journal of Applied Physics vol. 117 , ( 11 )

Kappers MJ, Zhu T, Sahonta S, Humphreys CJ, Oliver RA ( 2015 ) . SCM and SIMS investigations of unintentional doping in III‐nitrides . physica status solidi (c) . vol. 12 , 403 - 407 .

Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M et al. ( 2015 ) . Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V . Applied Physics Express vol. 8 , ( 3 )

Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO et al. ( 2015 ) . Segregation of In to Dislocations in InGaN . Nano Letters vol. 15 , ( 2 ) 923 - 930 .

Sutherland D, Zhu T, Griffiths JT, Tang F, Dawson P, Kundys D, Oehler F, Kappers MJ et al. ( 2015 ) . Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN . physica status solidi (b) . vol. 252 , 965 - 970 .

Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ ( 2014 ) . Carrier distributions in InGaN/GaN light‐emitting diodes . physica status solidi (b) vol. 252 , ( 5 ) 890 - 894 .

Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ, Houston PA ( 2014 ) . Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors . Journal of Applied Physics vol. 116 , ( 24 )

Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P, Oliver RA ( 2014 ) . Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures . physica status solidi (b) vol. 252 , ( 5 ) 928 - 935 .

Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ et al. ( 2014 ) . Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method . APL Materials vol. 2 , ( 12 )

Pristovsek M, Han Y, Zhu T, Frentrup M, Kappers MJ, Humphreys CJ, Kozlowski G, Maaskant P et al. ( 2015 ) . Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon . physica status solidi (b) . vol. 252 , 1104 - 1108 .

Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P et al. ( 2014 ) . Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE . Journal of Crystal Growth vol. 408 , 32 - 41 .

Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ, Humphreys CJ ( 2014 ) . A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures . physica status solidi (b) vol. 252 , ( 5 ) 866 - 872 .

Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ et al. ( 2014 ) . Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy . Journal of Applied Physics vol. 116 , ( 15 )

Trindade AJ, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ et al. ( 2014 ) . Capillary-Bonding of Thin LEDs onto Non-Native Substrates by Transfer-Printing . Conference: 2014 IEEE Photonics Conference504 - 505 .

Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ et al. ( 2014 ) . Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride . Physical Review Letters vol. 113 , ( 13 )

Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T et al. ( 2014 ) . The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem . Applied Physics Letters vol. 105 , ( 11 )

Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ et al. ( 2014 ) . Structure and strain relaxation effects of defects in InxGa1−xN epilayers . Journal of Applied Physics vol. 116 , ( 10 )

Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ, Humphreys CJ ( 2014 ) . The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures . Applied Physics Letters vol. 105 , ( 9 )

Trager-Cowan C, Naresh-Kumar G, Allehiani N, Kraeusel S, Hourahine B, Vespucci S, Thomson D, Bruckbauer J et al. ( 2014 ) . Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors . Microscopy and Microanalysis . vol. 20 , 1024 - 1025 .

Humphreys C ( 2014 ) . How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems . Microscopy and Microanalysis vol. 20 , ( S3 ) xcvii - c .

Humphreys C, Ford BJ ( 2014 ) . How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems . Microscopy and Microanalysis vol. 20 , ( S2 ) 11 - 14 .

Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA et al. ( 2014 ) . Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode . Journal of Applied Physics vol. 116 , ( 3 )

Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ et al. ( 2014 ) . Investigation of the GaN-on-GaAs interface for vertical power device applications . Journal of Applied Physics vol. 116 , ( 1 )

Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ et al. ( 2014 ) . Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE method . MRS Internet Journal of Nitride Semiconductor Research vol. 1 , ( 1 )

Nellist PD, Hirsch PB, Rhode S, Horton MK, Lozano JG, Yasuhara A, Okunishi E, Zhang S et al. ( 2014 ) . A dissociation mechanism for the [a+c] dislocation in GaN . Journal of Physics Conference Series . vol. 522 ,

Lozano JG, Guerrero-Lebrero MP, Yasuhara A, Okinishi E, Zhang S, Humphreys CJ, Galindo PL, Hirsch PB et al. ( 2014 ) . Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM . Journal of Physics Conference Series . vol. 522 ,

Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G et al. ( 2014 ) . Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues . AIP Advances vol. 4 , ( 6 )

Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D, Humphreys C ( 2014 ) . Dislocation-related trap levels in nitride-based light emitting diodes . Applied Physics Letters vol. 104 , ( 21 )

Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA et al. ( 2014 ) . Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire . Journal of Applied Physics vol. 115 , ( 11 )

Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA, Humphreys CJ ( 2014 ) . Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells . Journal of Applied Physics vol. 115 , ( 11 )

Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA, Martin RW ( 2014 ) . Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures . Journal of Physics D vol. 47 , ( 13 )

Vinattieri A, Batignani F, Bogani F, Meneghini M, Meneghesso G, Zanoni E, Zhu D, Humphreys CJ ( 2014 ) . Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing . AIP Conference Proceedings . vol. 1583 , 282 - 286 .

Mutta GR, Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Meneghesso G, Zhu D et al. ( 2014 ) . Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices . AIP Conference Proceedings . vol. 1583 , 315 - 318 .

Sutherland D, Oehler F, Zhu T, Griffiths JT, Badcock TJ, Dawson P, Emery RM, Kappers MJ et al. ( 2014 ) . An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire . physica status solidi (c) . vol. 11 , 541 - 544 .

Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ, Oliver RA ( 2014 ) . The impact of growth parameters on trench defects in InGaN/GaN quantum wells . physica status solidi (a) – applications and materials science vol. 211 , ( 4 ) 740 - 743 .

Davies MJ, Badcock TJ, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ ( 2014 ) . High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime . physica status solidi (c) . vol. 11 , 694 - 697 .

Badcock TJ, Dawson P, Davies MJ, Oliver RA, Kappers MJ, Humphreys CJ ( 2014 ) . Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures . physica status solidi (c) . vol. 11 , 738 - 741 .

Davies MJ, Massabuau FC, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ ( 2014 ) . Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures . physica status solidi (c) . vol. 11 , 710 - 713 .

Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ, Humphreys CJ ( 2014 ) . The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells . physica status solidi (c) vol. 11 , ( 3‐4 ) 750 - 753 .

Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E et al. ( 2014 ) . Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates . Journal of Applied Physics vol. 115 , ( 3 )

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA ( 2014 ) . The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method . Journal of Crystal Growth vol. 386 , 88 - 93 .

Zhang S, Fu WY, Holec D, Humphreys CJ, Moram MA ( 2013 ) . Elastic constants and critical thicknesses of ScGaN and ScAlN . Journal of Applied Physics vol. 114 , ( 24 )

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Humphreys CJ ( 2013 ) . The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates . Japanese Journal of Applied Physics vol. 50 , ( 8R )

Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ et al. ( 2013 ) . Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates . Applied Physics Letters vol. 103 , ( 25 )

Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS, Humphreys CJ ( 2013 ) . Interfacial Structure and Chemistry of GaN on Ge(111) . Physical Review Letters vol. 111 , ( 25 )

Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ, Corbett B ( 2013 ) . High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance . Applied Physics Express vol. 6 , ( 2 )

Massabuau FC-P, Trinh-Xuan L, Lodié D, Sahonta S-L, Rhode S, Thrush EJ, Oehler F, Kappers MJ et al. ( 2013 ) . Towards a better understanding of trench defects in InGaN/GaN quantum wells . Journal of Physics Conference Series . vol. 471 ,

Zhu D, Humphreys CJ ( 2013 ) . Low-cost high-efficiency GaN LED on large-area si substrate . 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 . 269 - 272 .

Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA et al. ( 2013 ) . Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN . Microscopy and Microanalysis vol. 20 , ( 1 ) 55 - 60 .

Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ, Oliver RA ( 2013 ) . Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges . Journal of Crystal Growth vol. 383 , 12 - 18 .

Zhang S, Holec D, Fu WY, Humphreys CJ, Moram MA ( 2013 ) . Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides . Journal of Applied Physics vol. 114 , ( 13 )

Zhu D, Wallis DJ, Humphreys CJ ( 2013 ) . Prospects of III-nitride optoelectronics grown on Si . Reports on Progress in Physics vol. 76 , ( 10 )

Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ et al. ( 2013 ) . The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes . Applied Physics Letters vol. 103 , ( 14 )

Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F, Humphreys CJ ( 2013 ) . The effect of dislocations on the efficiency of InGaN/GaN solar cells . Solar Energy Materials and Solar Cells vol. 117 , 279 - 284 .

Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ et al. ( 2013 ) . The dissociation of the [a + c] dislocation in GaN . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 93 , ( 28-30 ) 3925 - 3938 .

Trindade AJ, Massoubre D, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ et al. ( 2013 ) . Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes . Conference: 2013 IEEE Photonics Conference vol. 1 , 217 - 218 .

Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A, Humphreys CJ ( 2013 ) . Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps . Semiconductor Science and Technology vol. 28 , ( 9 )

Oehler F, Vickers ME, Kappers MJ, Humphreys CJ, Oliver RA ( 2013 ) . Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds . Japanese Journal of Applied Physics vol. 52 , ( 8S )

Brown PD, Humphreys CJ ( 2013 ) . Assessment of semiconductor epitaxial growth by transmission electron microscopy . Materials Science and Technology vol. 11 , ( 1 ) 54 - 65 .

Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L, Moram MA ( 2013 ) . Mg Doping Affects Dislocation Core Structures in GaN . Physical Review Letters vol. 111 , ( 2 )

Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA et al. ( 2013 ) . Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures . Japanese Journal of Applied Physics vol. 52 , ( 8S )

Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M et al. ( 2013 ) . Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells . Japanese Journal of Applied Physics vol. 52 , ( 8S )

Badcock TJ, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ ( 2013 ) . Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells . Japanese Journal of Applied Physics vol. 52 , ( 8S )

Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C et al. ( 2013 ) . Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates . Semiconductor Science and Technology vol. 28 , ( 6 )

Meneghini M, Trivellin N, Berti M, Cesca T, Gasparotto A, Vinattieri A, Bogani F, Zhu D et al. ( 2013 ) . Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs . Proceedings of SPIE--the International Society for Optical Engineering . Conference: Gallium Nitride Materials and Devices VIII vol. 8625 ,

Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ et al. ( 2013 ) . Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells . Journal of Applied Physics vol. 113 , ( 7 )

Jouvet N, Kappers MJ, Humphreys CJ, Oliver RA ( 2013 ) . The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption . Journal of Applied Physics vol. 113 , ( 6 )

Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ ( 2013 ) . High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop . Applied Physics Letters vol. 102 , ( 2 )

Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E et al. ( 2013 ) . Characteristics and applications of InGaN micro-light emitting diodes on Si substrates . Conference: 2013 IEEE Photonics Conference97 - 98 .

Humphreys CJ ( 2012 ) . The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law . Acta Crystallographica Section A: Foundations and advances vol. 69 , ( 1 ) 45 - 50 .

Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ, Oliver RA ( 2012 ) . Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures . Applied Physics Letters vol. 101 , ( 21 )

Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ, Oliver RA ( 2012 ) . Properties of trench defects in InGaN/GaN quantum well structures . physica status solidi (a) – applications and materials science vol. 210 , ( 1 ) 195 - 198 .

Humphreys C ( 2012 ) . Low-cost high-efficiency GaN LEDs on 6-inch Si . Solid-State and Organic Lighting, SOLED 2012 .

Sharma N, Tricker D, Keast V, Hooper S, Heffernan J, Barnes J, Kean A, Humphreys C ( 1999 ) . The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN . MRS Advances . vol. 595 ,

Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers M, Humphreys CJ ( 2012 ) . Characterisation of defects in p-GaN by admittance spectroscopy . Physica B Condensed Matter . vol. 407 , 2960 - 2963 .

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA, Humphreys CJ ( 2012 ) . Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells . Journal of Applied Physics vol. 112 , ( 1 )

Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA et al. ( 2012 ) . The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures . Journal of Applied Physics vol. 111 , ( 8 )

Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B et al. ( 2012 ) . Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs . IEEE Transactions on Electron Devices vol. 59 , ( 5 ) 1416 - 1422 .

Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ, Oliver RA ( 2012 ) . Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy . Journal of Applied Physics vol. 111 , ( 5 )

Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA, Humphreys CJ ( 2012 ) . Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering . Journal of Applied Physics vol. 111 , ( 4 )

Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P, Humphreys CJ ( 2012 ) . Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire . physica status solidi (b) vol. 249 , ( 3 ) 494 - 497 .

Amari H, Kappers MJ, Humphreys CJ, Chèze C, Walther T ( 2012 ) . Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope . physica status solidi (c) vol. 9 , ( 3‐4 ) 1079 - 1082 .

Liu LZ, McAleese C, Rao DVS, Kappers MJ, Humphreys CJ ( 2012 ) . Electron holography of an in‐situ biased GaN‐based LED . physica status solidi (c) . vol. 9 , 704 - 707 .

Kappers MJ, Badcock TJ, Hao R, Moram MA, Hammersley S, Dawson P, Humphreys CJ ( 2012 ) . On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells . physica status solidi (c) . vol. 9 , 465 - 468 .

Phillips WA, Thrush EJ, Zhang Y, Humphreys CJ ( 2012 ) . Studies of efficiency droop in GaN based LEDs . physica status solidi (c) . vol. 9 , 765 - 769 .

Radtke G, Couillard M, Botton GA, Zhu D, Humphreys CJ ( 2012 ) . Structure and chemistry of the Si(111)/AlN interface . Applied Physics Letters vol. 100 , ( 1 )

Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ, Humphreys CJ ( 2012 ) . Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements . Thin Solid Films vol. 520 , ( 7 ) 3064 - 3070 .

Humphreys C . Low-cost high-efficiency GaN LEDs on 6-inch Si . Conference: Renewable Energy and the Environment Optics and Photonics Congress

Badcock TJ, Kappers MJ, Moram MA, Dawson P, Humphreys CJ ( 2011 ) . Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN . physica status solidi (b) vol. 249 , ( 3 ) 498 - 502 .

Butler JH, Spence JCH, Reese G, Humphreys CJ, Doole RC ( 2011 ) . The energy dependence of axial coherent bremsstrahlung at low accelerating voltages . Radiation Effects and Defects in Solids vol. 84 , ( 3-4 ) 245 - 256 .

Hao R, Kappers MJ, Moram MA, Humphreys CJ ( 2011 ) . Defect reduction processes in heteroepitaxial non-polar a-plane GaN films . Journal of Crystal Growth vol. 337 , ( 1 ) 81 - 86 .

Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ, Moram MA ( 2011 ) . Growth, microstructure and morphology of epitaxial ScGaN films . physica status solidi (a) – applications and materials science vol. 209 , ( 1 ) 33 - 40 .

Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M et al. ( 2011 ) . High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates . physica status solidi (a) – applications and materials science vol. 209 , ( 1 ) 13 - 16 .

Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ et al. ( 2011 ) . Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope . Journal of Physics Conference Series . vol. 326 ,

Petrov M, Holec D, Lymperakis L, Neugebauer J, Humphreys CJ ( 2011 ) . Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xN . Journal of Physics Conference Series . vol. 326 ,

Moram MA, Kappers MJ, Massabuau F, Oliver RA, Humphreys CJ ( 2011 ) . Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)] . Journal of Applied Physics vol. 110 , ( 9 )

Zhang Y, Fu W-Y, Humphreys C, Lieten R ( 2011 ) . Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate . Applied Physics Express vol. 4 , ( 9 )

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Humphreys CJ ( 2011 ) . The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates . Japanese Journal of Applied Physics vol. 50 , ( 8R )

Hull R, Smith DJ, Humphreys CJ ( 2011 ) . A high‐resolution electron microscopic study of defects in sodium β′″‐alumina . Journal of Microscopy vol. 130 , ( 2 ) 203 - 214 .

Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD, Oliver RA ( 2011 ) . Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells . Applied Physics Letters vol. 99 , ( 2 )

Hammersley S, Badcock TJ, Watson‐Parris D, Godfrey MJ, Dawson P, Kappers MJ, Humphreys CJ ( 2011 ) . Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure . physica status solidi (c) . vol. 8 , 2194 - 2196 .

Fu WY, Kappers MJ, Zhang Y, Humphreys CJ, Moram MA ( 2011 ) . Dislocation Climb in c-Plane AlN Films . Applied Physics Express vol. 4 , ( 6 )

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ, Humphreys CJ ( 2011 ) . Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphire . physica status solidi (c) . vol. 8 , 2179 - 2181 .

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ, Humphreys CJ ( 2011 ) . The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates . physica status solidi (a) – applications and materials science vol. 208 , ( 7 ) 1529 - 1531 .

Humphreys CJ ( 2011 ) . The Mystery of the Last Supper . Cambridge University Press (CUP)

Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH, Humphreys CJ ( 2011 ) . Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys . Physical Review B vol. 83 , ( 16 )

Moram MA, Kappers MJ, Massabuau F, Oliver RA, Humphreys CJ ( 2011 ) . The effects of Si doping on dislocation movement and tensile stress in GaN films . Journal of Applied Physics vol. 109 , ( 7 )

Sharma N, Cho HK, Lee JY, Humphreys CJ ( 2011 ) . Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells . MRS Advances vol. 667 ,

Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ, Humphreys CJ ( 2011 ) . Carrier localization mechanisms in InxGa1-xN/GaN quantum wells . Physical Review B vol. 83 , ( 11 )

Kvam EP, Maher DM, Humphreys CJ ( 2011 ) . Dislocation Behaviour in GexSi1-x Epilayers on (001)Si . MRS Advances vol. 160 ,

Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Bean JC ( 2011 ) . Dislocation Nucleation in GeSi/Si(100) Strained Epilayers . MRS Advances vol. 138 ,

Eaglesham DJ, Hetherington CJD, Humphreys CJ ( 2011 ) . Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals . MRS Advances vol. 77 ,

Kvam EP, Eaglesham DJ, Maher DM, Humphreys CJ, Bean JC, Green GS, Tanner BK ( 2011 ) . The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers . MRS Advances vol. 104 ,

Bullough TJ, Humphreys CJ, Devenish RW ( 2011 ) . Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si And MgO . MRS Advances vol. 157 ,

Inkson BJ, Humphreys CJ ( 1994 ) . An Hrem Investigation of a {121}L10 Boundary in Tial . MRS Advances . vol. 364 ,

Wiezorek JMK, Court SA, Humphreys CJ ( 1994 ) . Experimental Tem and Image Simulation of <A> Dislocations in Ti3A1 . MRS Advances . vol. 364 ,

Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ ( 1995 ) . Electron Beam Induced Crystallisation in Iron (III) Fluoride . MRS Advances . vol. 398 ,

Boothroyd CB, Dunin-borkowski RE, Stobbs WM, Humphreys CJ ( 1994 ) . Quantifying The Effects Of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron Microscopy . MRS Advances . vol. 354 ,

Brown PD, Humphreys CJ ( 1994 ) . Stebic Revisited . MRS Advances . vol. 354 ,

Loginov YY, Brown PD, Humphreys CJ ( 1994 ) . Control of Point Defects in Semiconductors . MRS Advances . vol. 373 ,

Morgan CJ, Humphreys CJ ( 1995 ) . A Model for Estimating the Stress Induced During Oxidation of Sharp Silicon Structures . MRS Advances . vol. 389 ,

Cullen SL, Morgan CJ, Boothroyd CB, Humphreys CJ ( 1994 ) . Hrem Lattice Image Simulations of Circular Cross-Sectional Multishell Carbon Nanotubes . MRS Advances . vol. 359 ,

Xin Y, Brown PD, Boothroyd CB, Preston AR, Humphreys CJ, Cheng TS, Foxon CT, Andrianov AV et al. ( 1996 ) . TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs . MRS Advances . vol. 423 , 311 - 316 .

Brown PD, Tricker DM, Xin Y, Chengt TS, Foxont CT, Evanst D, Galloway SA, Brock J et al. ( 1997 ) . A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan . MRS Advances . vol. 482 ,

Tricker DM, Brown PD, Martin G, Lu J, Westwood DI, Hill P, Haworth L, MacDonald JE et al. ( 1997 ) . A Tem Study of the Microstructural Evolution of MBE-Grown GaN . MRS Advances . vol. 482 , 187 - 192 .

Pekarskaya E, Humphreys CJ, Jones CN ( 2011 ) . Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions . MRS Advances vol. 552 ,

Bottonm GA, Guo GY, Temmerman WM, Szotek Z, Humphreys CJ, Wango Y, Stocks GM, Nicholson DMC et al. ( 1995 ) . EELS Studies of B2-Type Transition Metal Aluminides: Experiment and Theory . MRS Advances . vol. 408 ,

Brown PD, Humphreys CJ ( 1998 ) . Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth . MRS Advances . vol. 523 ,

Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ, Temmerman WM ( 2011 ) . Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory . MRS Advances vol. 552 ,

Liu CP, Boothroyd CB, Humphreys CJ ( 1998 ) . Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors . MRS Advances . vol. 523 ,

Natusch MKH, Botton GA, Broom RF, Brown PD, Tricker DM, Humphreys CJ ( 1997 ) . Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy . MRS Advances . vol. 482 ,

Smeeton TM, Kappers MJ, Barnard JS, Humphreys CJ ( 2003 ) . Analysis of InGaN-GaN quantum well chemistry and interfaces by transmission electron microscopy and X-ray scattering . MRS Advances . vol. 798 ,

Hollander J, McAleese C, Kappers M, Humphreys C ( 2006 ) . Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers . MRS Advances . vol. 955 ,

Charles MB, Kappers MJ, Humphreys CJ ( 2011 ) . Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111) . MRS Advances vol. 831 , ( 1 ) 377 - 381 .

Costa P, Datta R, Kappers M, Vickers M, Humphreys C ( 2011 ) . Misfit dislocations in green-emitting InGaN/GaN quantum well structures . MRS Advances vol. 892 , ( 1 )

Datta R, Kappers MJ, Barnard JS, Humphreys CJ ( 2011 ) . Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE . MRS Advances vol. 831 ,

Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ ( 2011 ) . SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations . MRS Advances vol. 892 , ( 1 )

Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J, Humphreys CJ ( 2011 ) . Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy . MRS Advances vol. 955 ,

Chee AKW, Rodenburg C, Humphreys CJ ( 2011 ) . The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions . MRS Advances vol. 1026 ,

Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ, Humphreys CJ ( 2011 ) . The mean inner potential of GaN measured from nanowires using off-axis electron holography . MRS Advances vol. 892 , ( 1 )

Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A, Richter W ( 2011 ) . A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy . Journal of Materials Research vol. 14 , ( 8 ) 3226 - 3236 .

Humphreys C ( 2011 ) . Can a Materials Scientist Move Mount Sinai? . MRS Bulletin vol. 29 , ( 4 ) 222 - 223 .

Humphreys CJ ( 2011 ) . Solid-State Lighting . MRS Bulletin vol. 33 , ( 4 ) 459 - 470 .

Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD, Richter W ( 2011 ) . The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy . Journal of Materials Research vol. 14 , ( 5 ) 2036 - 2042 .

Kvam EP, Maher DM, Humphreys CJ ( 2011 ) . Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si . Journal of Materials Research vol. 5 , ( 9 ) 1900 - 1907 .

Chee AKW, Broom RF, Humphreys CJ, Bosch EGT ( 2011 ) . A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations . Journal of Applied Physics vol. 109 , ( 1 )

Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P et al. ( 2011 ) . Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates . Journal of Applied Physics vol. 109 , ( 1 )

Zhu D, Humphreys CJ ( 2011 ) . Lighting . Fundamentals of Materials for Energy and Environmental Sustainability , Cambridge University Press (CUP)

Moram MA, Sadler TC, Häberlen M, Kappers MJ, Humphreys CJ ( 2010 ) . Dislocation movement in GaN films . Applied Physics Letters vol. 97 , ( 26 )

Chang TY, Moram MA, McAleese C, Kappers MJ, Humphreys CJ ( 2010 ) . Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm . Journal of Applied Physics vol. 108 , ( 12 )

Radtke G, Couillard M, Botton GA, Zhu D, Humphreys CJ ( 2010 ) . Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy . Applied Physics Letters vol. 97 , ( 25 )

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA ( 2010 ) . Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice . Ultramicroscopy vol. 111 , ( 3 ) 207 - 211 .

Nishino Y, Inkson BJ, Ogawa T, Humphreys CJ ( 2010 ) . Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys . Philosophical Magazine Letters vol. 78 , ( 2 ) 97 - 103 .

Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ, Moram MA ( 2010 ) . The effects of annealing on non-polar (112¯0) a-plane GaN films . Journal of Crystal Growth vol. 312 , ( 23 ) 3536 - 3543 .

Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ, O’Reilly EP ( 2010 ) . Electronic and optical properties of nonpolar a-plane GaN quantum wells . Physical Review B vol. 82 , ( 12 )

Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A, Humphreys CJ ( 2010 ) . Microstructural origins of localization in InGaN quantum wells . Journal of Physics D vol. 43 , ( 35 )

Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA ( 2010 ) . Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth . Journal of Applied Physics vol. 108 , ( 3 )

Kurniawan O, Tan CC, Ong VKS, Li E, Humphreys CJ ( 2010 ) . A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem . IEEE Transactions on Electron Devices vol. 57 , ( 10 ) 2455 - 2461 .

Rodenburg C, Jepson MAE, Inkson BJ, Bosch EGT, Humphreys CJ ( 2010 ) . Energy filtered scanning electron microscopy: applications to characterisation of semiconductors . Journal of Physics Conference Series . vol. 241 ,

Humphreys C, Oliver R, Kappers M, Bennett, Parris D, Dawson P, Godfrey M, Clifton P et al. ( 2010 ) . Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices . Microscopy and Microanalysis vol. 16 , ( S2 ) 1890 - 1891 .

Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA ( 2010 ) . Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlattice . physica status solidi (c) . vol. 7 , 1781 - 1783 .

Badcock TJ, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P ( 2010 ) . Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults . physica status solidi (c) . vol. 7 , 1894 - 1896 .

Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O'Reilly EP, Humphreys CJ ( 2010 ) . Characterising the degree of polarisation anisotropy in an a ‐plane GaN film . physica status solidi (c) . vol. 7 , 1897 - 1899 .

Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ, Oliver RA ( 2010 ) . Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN . physica status solidi (c) . vol. 7 , 2088 - 2090 .

Watson‐Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ, Humphreys CJ ( 2010 ) . Energy landscape and carrier wave‐functions in InGaN/GaN quantum wells . physica status solidi (c) . vol. 7 , 2255 - 2258 .

Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P et al. ( 2010 ) . InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength . physica status solidi (c) . vol. 7 , 2168 - 2170 .

Moram MA, Kappers MJ, Humphreys CJ ( 2010 ) . Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers . physica status solidi (c) . vol. 7 , 1778 - 1780 .

Collins DP, Holmes MJ, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ ( 2010 ) . Q‐factor measurements on planar nitride cavities . physica status solidi (c) . vol. 7 , 1866 - 1868 .

Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ . Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer . physica status solidi (b) . vol. 247 , 1753 - 1756 .

Bennett SE, Holec D, Kappers MJ, Humphreys CJ, Oliver RA ( 2010 ) . Imaging dislocations in gallium nitride across broad areas using atomic force microscopy . Review of Scientific Instruments vol. 81 , ( 6 )

Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M, Spence JCH ( 2010 ) . Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN . Acta Crystallographica Section A: Foundations and advances vol. 66 , ( 4 ) 446 - 450 .

Liu LZ-Y, Rao DVS, Kappers MJ, Humphreys CJ, Geiger D ( 2010 ) . Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography . Journal of Physics Conference Series . vol. 209 ,

Haeberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ ( 2010 ) . Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers . Journal of Physics Conference Series . vol. 209 ,

Rodenburg C, Jepson MAE, Inkson BJ, Bosch E, Chee AKW, Humphreys CJ ( 2010 ) . Energy filtered scanning electron microscopy: Applications to dopant contrast . Journal of Physics Conference Series . vol. 209 ,

Rao DVS, Beanland R, Kappers MJ, Zhu D, Humphreys CJ ( 2010 ) . Lattice distortions in GaN thin films on (0001) sapphire . Journal of Physics Conference Series . vol. 209 ,

Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA ( 2010 ) . Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS . Journal of Physics Conference Series . vol. 209 ,

Chee KWA, Bosch EGT, Humphreys CJ ( 2010 ) . Progress towards quantitative dopant profiling in the SEM . Journal of Physics Conference Series . vol. 209 ,

Jepson MAE, Inkson BJ, Beanland R, Chee AKW, Humphreys CJ, Rodenburg C ( 2010 ) . Progress towards site-specific dopant profiling in the scanning electron microscope . Journal of Physics Conference Series . vol. 209 ,

Oliver RA, Bennett SE, Sumner J, Kappers MJ, Humphreys CJ ( 2010 ) . Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth . Journal of Physics Conference Series . vol. 209 ,

Chee KWA, Beanland R, Midgley PA, Humphreys CJ ( 2010 ) . Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system . Journal of Physics Conference Series . vol. 209 ,

Barnard JS, Bennett SE, Oliver RA, Kappers MJ, Humphreys CJ ( 2010 ) . The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials . Journal of Physics Conference Series . vol. 209 ,

Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ, Hageman PR ( 2010 ) . Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment . Journal of Crystal Growth vol. 312 , ( 4 ) 595 - 600 .

Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2010 ) . Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy . Journal of Physics D vol. 43 , ( 5 )

Kappers MJ, Moram MA, Rao DVS, McAleese C, Humphreys CJ ( 2010 ) . Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire . Journal of Crystal Growth vol. 312 , ( 3 ) 363 - 367 .

Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ, Humphreys CJ ( 2009 ) . Cavity Enhancement of Single Quantum Dot Emission in the Blue . Discover Nano vol. 5 , ( 3 )

Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ, Humphreys CJ ( 2009 ) . Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy . Journal of Applied Physics vol. 106 , ( 11 )

Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2009 ) . Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN . Journal of Applied Physics vol. 106 , ( 10 )

Moram MA, Oliver RA, Kappers MJ, Humphreys CJ ( 2009 ) . The Spatial Distribution of Threading Dislocations in Gallium Nitride Films . Advanced Materials vol. 21 , ( 38‐39 ) 3941 - 3944 .

Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ, Corbett B ( 2009 ) . Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes . Applied Physics Letters vol. 95 , ( 15 )

Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ, Humphreys CJ ( 2009 ) . On the origin of threading dislocations in GaN films . Journal of Applied Physics vol. 106 , ( 7 )

Oliver RA, Sumner J, Kappers MJ, Humphreys CJ ( 2009 ) . Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images . Journal of Applied Physics vol. 106 , ( 5 )

Bright AN, Humphreys CJ ( 2009 ) . Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy . Philosophical Magazine B vol. 81 , ( 11 ) 1725 - 1744 .

Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction . Physica B Condensed Matter vol. 404 , ( 16 ) 2189 - 2191 .

Bennett, Oliver R, Saxey D, Cerezo A, Clifton P, Ulfig R, Kappers M, Humphreys C ( 2009 ) . Atom Probe Tomography Studies of GaN-Based Semiconductor Materials . Microscopy and Microanalysis . vol. 15 , 280 - 281 .

Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA et al. ( 2009 ) . Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy . Journal of Applied Physics vol. 106 , ( 1 )

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM et al. ( 2009 ) . Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates . Journal of Applied Physics vol. 105 , ( 12 )

Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films . Journal of Physics D vol. 42 , ( 13 )

Rao DVS, McLaughlin K, Kappers MJ, Humphreys CJ ( 2009 ) . Lattice distortions in GaN on sapphire using the CBED–HOLZ technique . Ultramicroscopy vol. 109 , ( 10 ) 1250 - 1255 .

Johnston CF, Kappers MJ, Moram MA, Hollander JL, Humphreys CJ ( 2009 ) . Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire . physica status solidi (a) – applications and materials science . vol. 206 , 1190 - 1193 .

Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H et al. ( 2009 ) . Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy . physica status solidi (a) – applications and materials science . vol. 206 , 1205 - 1210 .

Johnston CF, Kappers MJ, Moram MA, Hollander JL, Humphreys CJ ( 2009 ) . Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire . Journal of Crystal Growth vol. 311 , ( 12 ) 3295 - 3299 .

Moram MA, Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers . Journal of Crystal Growth vol. 311 , ( 12 ) 3239 - 3242 .

Moram MA, Johnston CF, Hollander JL, Kappers MJ, Humphreys CJ ( 2009 ) . Understanding x-ray diffraction of nonpolar gallium nitride films . Journal of Applied Physics vol. 105 , ( 11 )

Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C, Tahraoui A ( 2009 ) . Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot . Nanotechnology vol. 20 , ( 24 )

Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C, Humphreys CJ ( 2009 ) . Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures . physica status solidi (c) . vol. 6 , s727 - s730 .

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM et al. ( 2009 ) . Optical polarisation anisotropy in a ‐plane GaN/AlGaN multiple quantum well structures . physica status solidi (c) . vol. 6 , s523 - s526 .

Johnston CF, Moram MA, Kappers MJ, Humphreys CJ ( 2009 ) . Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers . Applied Physics Letters vol. 94 , ( 16 )

Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A ( 2009 ) . Non‐linear excitation and correlation studies of single InGaN quantum dots . physica status solidi (c) . vol. 6 , 864 - 867 .

Johnston CF, Kappers MJ, Humphreys CJ ( 2009 ) . Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method . Journal of Applied Physics vol. 105 , ( 7 )

Holec D, Rao DVS, Humphreys CJ ( 2009 ) . HANSIS software tool for the automated analysis of HOLZ lines . Ultramicroscopy vol. 109 , ( 7 ) 837 - 844 .

Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ, Campion RP ( 2009 ) . Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy . Journal of Crystal Growth vol. 311 , ( 7 ) 2054 - 2057 .

Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA et al. ( 2009 ) . GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE . Proceedings of SPIE--the International Society for Optical Engineering . Conference: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII vol. 7231 ,

Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA, Humphreys CJ ( 2009 ) . Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices . Applied Physics Letters vol. 94 , ( 1 )

Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . Equilibrium critical thickness for misfit dislocations in III-nitrides . Journal of Applied Physics vol. 104 , ( 12 )

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A ( 2008 ) . Electrically driven single InGaN/GaN quantum dot emission . Applied Physics Letters vol. 93 , ( 23 )

Holec D, Costa PMFJ, Cherns PD, Humphreys CJ ( 2008 ) . A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programs . Computational Materials Science . vol. 44 , 91 - 96 .

Kappers MJ, Hollander JL, Johnston CF, McAleese C, Rao DVS, Sanchez AM, Humphreys CJ, Badcock TJ et al. ( 2008 ) . Properties of non-polar a-plane GaN/AlGaN quantum wells . Journal of Crystal Growth . vol. 310 , 4983 - 4986 .

Humphreys C ( 2008 ) . Science and the Miracles of Exodus . Europhysics news vol. 36 , ( 3 ) 93 - 96 .

Moram MA, Barber ZH, Humphreys CJ ( 2008 ) . The effect of oxygen incorporation in sputtered scandium nitride films . Thin Solid Films vol. 516 , ( 23 ) 8569 - 8572 .

Johnston CF, Kappers MJ, Barnard JS, Humphreys CJ ( 2008 ) . Characterisation of non-polar (11-20) gallium nitride using TEM techniques . Journal of Physics Conference Series . vol. 126 ,

Chee KWA, Rodenburg C, Humphreys CJ ( 2008 ) . High resolution dopant profiling in the SEM, image widths and surface band-bending . Journal of Physics Conference Series . vol. 126 ,

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM et al. ( 2008 ) . Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates . Applied Physics Letters vol. 93 , ( 10 )

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW, Cerezo A ( 2008 ) . Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures . Journal of Applied Physics vol. 104 , ( 1 )

Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaN . 2010 Conference on Optoelectronic and Microelectronic Materials and Devices . Conference: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices30 - 33 .

Oliver RA, Van der Laak NK, Kappers MJ, Humphreys CJ ( 2008 ) . Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose . Journal of Crystal Growth vol. 310 , ( 15 ) 3459 - 3465 .

Oliver RA, Galtrey MJ, Humphreys CJ ( 2008 ) . High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems . Materials Science and Technology vol. 24 , ( 6 ) 675 - 681 .

Moram MA, Kappers MJ, Zhang Y, Barber ZH, Humphreys CJ ( 2008 ) . Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers . physica status solidi (a) – applications and materials science . vol. 205 , 1064 - 1066 .

Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Assessment of scanning spreading resistance microscopy for application to n‐type GaN . physica status solidi (c) . vol. 5 , 1652 - 1654 .

Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J, Humphreys CJ ( 2008 ) . Degradation of III‐nitride laser diodes grown by molecular beam epitaxy . physica status solidi (c) . vol. 5 , 2204 - 2206 .

Dawson P, Hylton NP, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells . physica status solidi (c) . vol. 5 , 2270 - 2273 .

Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Gross well‐width fluctuations in InGaN quantum wells . physica status solidi (c) . vol. 5 , 1475 - 1481 .

Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ, Humphreys CJ ( 2008 ) . High brightness near‐ultraviolet resonant LEDs . physica status solidi (c) . vol. 5 , 2056 - 2058 .

Emiroglu D, Evans‐Freeman J, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaN . physica status solidi (c) . vol. 5 , 1482 - 1484 .

Johnston CF, Kappers MJ, Barnard JS, Humphreys CJ ( 2008 ) . Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphire . physica status solidi (c) . vol. 5 , 1786 - 1788 .

Datta R, McAleese C, Cherns P, Rayment FDG, Humphreys CJ ( 2008 ) . Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer . physica status solidi (c) . vol. 5 , 1743 - 1745 .

Salcianu CO, Thrush EJ, Plumb RG, Boyd AR, Rockenfeller O, Schmitz D, Heuken M, Humphreys CJ ( 2008 ) . Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures . physica status solidi (c) . vol. 5 , 2219 - 2221 .

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S, Borghs G ( 2008 ) . Structural features in GaN grown on a Ge(111) substrate . physica status solidi (c) . vol. 5 , 1802 - 1804 .

Moram MA, Vickers ME, Kappers MJ, Humphreys CJ ( 2008 ) . The effect of wafer curvature on x-ray rocking curves from gallium nitride films . Journal of Applied Physics vol. 103 , ( 9 )

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA, Humphreys CJ ( 2008 ) . Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field . Superlattices and Microstructures . vol. 43 , 431 - 435 .

Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT, Humphreys CJ ( 2008 ) . Growth of epitaxial thin films of scandium nitride on 100-oriented silicon . Journal of Crystal Growth vol. 310 , ( 11 ) 2746 - 2750 .

Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larsen D et al. ( 2008 ) . Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions . physica status solidi (b) . vol. 245 , 861 - 867 .

Sumner J, Bakshi SD, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Unintentional doping in GaN assessed by scanning capacitance microscopy . physica status solidi (b) . vol. 245 , 896 - 898 .

Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H, Humphreys CJ ( 2008 ) . Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings . Applied Physics Letters vol. 92 , ( 15 )

Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride . Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 26 , ( 2 ) 611 - 617 .

Hollander JL, Kappers MJ, McAleese C, Humphreys CJ ( 2008 ) . Improvements in a-plane GaN crystal quality by a two-step growth process . Applied Physics Letters vol. 92 , ( 10 )

Oliver RA, Kappers MJ, McAleese C, Datta R, Sumner J, Humphreys CJ ( 2008 ) . The origin and reduction of dislocations in Gallium Nitride . Journal of Materials Science: Materials in Electronics . vol. 19 , 208 - 214 .

de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D, Humphreys CJ ( 2008 ) . Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008) . Advanced Materials vol. 20 , ( 5 )

de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D, Humphreys CJ ( 2008 ) . Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures . Advanced Materials vol. 20 , ( 5 ) 1038 - 1043 .

Oliver RA, Jarjour AF, Taylor RA, Tahraoui A, Zhang Y, Kappers MJ, Humphreys CJ ( 2008 ) . Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source . Materials Science and Engineering B . vol. 147 , 108 - 113 .

Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D et al. ( 2008 ) . Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe . Applied Physics Letters vol. 92 , ( 4 )

Zhao LX, Thrush EJ, Humphreys CJ, Phillips WA ( 2008 ) . Degradation of GaN-based quantum well light-emitting diodes . Journal of Applied Physics vol. 103 , ( 2 )

WHITE RS, HUMPHREYS CJ ( 2008 ) . Famines and cataclysmic volcanism . Geology Today vol. 10 , ( 5 ) 181 - 185 .

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S, Borghs G ( 2008 ) . An Initial Exploration of GaN Grown on a Ge-(111) Substrate . Springer Proceedings in Physics . vol. 120 , 61 - 64 .

Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2008 ) . Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN . Springer Proceedings in Physics . vol. 120 , 463 - 466 .

Moldovan* G, Ong VKS, Kurniawan O, Kazemian P, Edwards PR, Humphreys C ( 2008 ) . EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs . Springer Proceedings in Physics . vol. 120 , 485 - 488 .

Chee KWA, Rodenburg C, Humphreys CJ ( 2008 ) . Quantitative Dopant Profiling in the SEM Including Surface States . Springer Proceedings in Physics . vol. 120 , 407 - 410 .

Cherns PD, McAleese C, Kappers MJ, Humphreys CJ ( 2008 ) . Strain Relaxation in an AlGaN/GaN Quantum Well System . Springer Proceedings in Physics . vol. 120 , 25 - 28 .

Humphreys CJ, Galtrey MJ, Laak NVD, Oliver RA, Kappers MJ, Barnard JS, Graham DM, Dawson P ( 2008 ) . The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key . Springer Proceedings in Physics . vol. 120 , 3 - 12 .

Humphreys CJ, Galtrey MJ, Oliver RA, Kappers MJ, Zhu D, McAleese C, van der Laak NK, Graham DM et al. ( 2008 ) . The atomic structure of GaN-based quantum wells and interfaces . EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany , Springer Nature

Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y, Humphreys CJ ( 2008 ) . The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3 . Applied Surface Science vol. 254 , ( 7 ) 2124 - 2130 .

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH, Cerezo A ( 2008 ) . Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures . Springer Proceedings in Physics . vol. 120 , 161 - 164 .

Holec D, Humphreys CJ ( 2008 ) . Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems . vol. 567-568 , 209 - 212 .

Withnall R, Silver J, Ireland TG, Lipman AL, Fern GR, McAleese C, Humphreys C, Phillips WA ( 2007 ) . Advantages and disadvantages of using YAG: Ce nanophosphors encapsulated on blue-emitting LED chips as backlights for displays . SID Conference Record of the International Display Research Conference . 179 - 182 .

Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA et al. ( 2007 ) . Atom probe tomography today . Materials Today vol. 10 , ( 12 ) 36 - 42 .

Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C, Humphreys CJ ( 2007 ) . Deep electronic states associated with a metastable hole trap in n-type GaN . Physica B Condensed Matter vol. 401 , 311 - 314 .

Hollander JL, Kappers MJ, Humphreys CJ ( 2007 ) . Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations . Physica B Condensed Matter . vol. 401 , 307 - 310 .

Kappers MJ, Moram MA, Zhang Y, Vickers ME, Barber ZH, Humphreys CJ ( 2007 ) . Interlayer methods for reducing the dislocation density in gallium nitride . Physica B Condensed Matter . vol. 401 , 296 - 301 .

Humphreys CJ ( 2007 ) . Chapter 42 . Turning Points in Solid-State, Materials and Surface Science , Royal Society of Chemistry (RSC)

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ, Taylor RA ( 2007 ) . Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot . Physical Review Letters vol. 99 , ( 19 )

Hylton NP, Dawson P, Kappers MJ, McAleese C, Humphreys CJ ( 2007 ) . Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure . Physical Review B vol. 76 , ( 20 )

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A, Smith GDW ( 2007 ) . Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)] . Applied Physics Letters vol. 91 , ( 17 )

Holec D, Costa PMFJ, Cherns PD, Humphreys CJ ( 2007 ) . Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs . Micron vol. 39 , ( 6 ) 690 - 697 .

Jiang N, Qiu J, Humphreys CJ, Spence JCH ( 2007 ) . Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure . Micron vol. 39 , ( 6 ) 698 - 702 .

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ ( 2007 ) . Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer . Journal of Crystal Growth vol. 308 , ( 2 ) 302 - 308 .

Moram MA, Zhang Y, Kappers MJ, Barber ZH, Humphreys CJ ( 2007 ) . Dislocation reduction in gallium nitride films using scandium nitride interlayers . Applied Physics Letters vol. 91 , ( 15 )

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ ( 2007 ) . Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer . Journal of Crystal Growth vol. 308 , ( 2 ) 302 - 308 .

Zhu D, Corbett B, Roycroft B, Maaskant P, McAleese C, Akhter M, Kappers MJ, Humphreys CJ ( 2007 ) . Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications . Proceedings of SPIE--the International Society for Optical Engineering . Conference: Manufacturing LEDs for Lighting and Displays vol. 6797 ,

Humphreys CJ, Fisher RM ( 2007 ) . Bloch wave notation in many‐beam electron diffraction theory . Acta Crystallographica Section A: Foundations and advances vol. 27 , ( 1 ) 42 - 45 .

Moodie AF, Etheridge J, Humphreys CJ ( 2007 ) . The Symmetry of Three‐Beam Scattering Equations: Inversion of Three‐Beam Diffraction Patterns from Centrosymmetric Crystals . Acta Crystallographica Section A: Foundations and advances vol. 52 , ( 4 ) 596 - 605 .

Sellar JR, Imeson D, Humphreys CJ ( 2007 ) . The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction . Acta Crystallographica Section A: Foundations and advances vol. 36 , ( 4 ) 686 - 696 .

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B, Borghs G ( 2007 ) . Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy . Applied Physics Letters vol. 91 , ( 9 )

Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R et al. ( 2007 ) . 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials . Microscopy and Microanalysis vol. 13 , ( S02 ) 1608 - 1609 .

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A ( 2007 ) . Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot . Applied Physics Letters vol. 91 , ( 5 )

Moram MA, Barber ZH, Humphreys CJ ( 2007 ) . Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction . Journal of Applied Physics vol. 102 , ( 2 )

van der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ ( 2007 ) . Characterization of InGaN quantum wells with gross fluctuations in width . Journal of Applied Physics vol. 102 , ( 1 )

Sumner J, Oliver RA, Kappers MJ, Humphreys CJ ( 2007 ) . Practical issues in carrier‐contrast imaging of GaN structures . physica status solidi (c) . vol. 4 , 2576 - 2580 .

Galtrey M, Oliver R, Humphreys C ( 2007 ) . Atom probe provides evidence to question InGaN cluster theory . Compound Semiconductor vol. 13 , ( 4 ) 27 - 30 .

Holec D, Costa PMFJ, Kappers MJ, Humphreys CJ ( 2007 ) . Critical thickness calculations for InGaN/GaN . Journal of Crystal Growth . vol. 303 , 314 - 317 .

Humphreys CJ ( 2007 ) . Does In form In-rich clusters in InGaN quantum wells? . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 87 , ( 13 ) 1971 - 1982 .

Oliver RA, Jarjour AF, Tahraoui A, Kappers MJ, Taylor RA, Humphreys CJ ( 2007 ) . Materials challenges for devices based on single, self-assembled InGaN quantum dots . Journal of Physics Conference Series . vol. 61 ,

Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabrol GR, Humphreys CJ ( 2007 ) . High Photoluminescence Efficiency III‐Nitride Based Quantum Well Structures Emitting at 380 nm . AIP Conference Proceedings . Conference: AIP Conference Proceedings vol. 893 , 347 - 348 .

Jarjour AF, Taylor RA, Martin RW, Watson IM, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ ( 2007 ) . Optical Studies of Non‐linear Absorption in Single InGaN/GaN Quantum Dots . AIP Conference Proceedings . Conference: AIP Conference Proceedings vol. 893 , 953 - 954 .

Rigopoulos N, Hamilton B, Davies GJ, Towlson BM, Poolton NRJ, Dawson P, Graham DM, Kappers MJ et al. ( 2007 ) . Optically Detected Extended X‐Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells . AIP Conference Proceedings . Conference: AIP Conference Proceedings vol. 893 , 1503 - 1504 .

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Humphreys CJ ( 2007 ) . Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well Structures . AIP Conference Proceedings . Conference: AIP Conference Proceedings vol. 893 , 433 - 434 .

Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B et al. ( 2007 ) . Anisotropic strain relaxation in a-plane GaN quantum dots . Journal of Applied Physics vol. 101 , ( 6 )

van der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ ( 2007 ) . Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures . Applied Physics Letters vol. 90 , ( 12 )

Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME, Humphreys CJ ( 2007 ) . Growth and characterisation of semi-polar (1l2¯2) InGaN/GaN MQW structures . Journal of Crystal Growth . vol. 300 , 155 - 159 .

Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME, Humphreys CJ ( 2007 ) . Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers . Journal of Crystal Growth . vol. 300 , 70 - 74 .

Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C, Humphreys CJ ( 2007 ) . High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm . Journal of Applied Physics vol. 101 , ( 3 )

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH, Cerezo A ( 2007 ) . Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering . Applied Physics Letters vol. 90 , ( 6 )

Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ, Humphreys CJ ( 2007 ) . Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy . Applied Surface Science vol. 253 , ( 8 ) 3937 - 3944 .

Moram MA, Kappers MJ, Barber ZH, Humphreys CJ ( 2007 ) . Growth of low dislocation density GaN using transition metal nitride masking layers . Journal of Crystal Growth . vol. 298 , 268 - 271 .

Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabro GR, Humphreys CJ ( 2007 ) . High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm . PHYSICS OF SEMICONDUCTORS, PTS A AND B . vol. 893 , 347 - + .

Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ et al. ( 2007 ) . Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures . Journal of Crystal Growth . vol. 298 , 504 - 507 .

Ong VKS, Kurniawan O, Moldovan G, Humphreys CJ ( 2006 ) . A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions . Journal of Applied Physics vol. 100 , ( 11 )

Huixin X, Costa PMFJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J, Humphreys CJ ( 2006 ) . Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy . Materials Research Society Symposium Proceedings . vol. 955 , 46 - 52 .

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Humphreys CJ ( 2006 ) . Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures . Applied Physics Letters vol. 89 , ( 21 )

Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O, Humphreys CJ ( 2006 ) . Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices . Ultramicroscopy vol. 107 , ( 4-5 ) 382 - 389 .

Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM et al. ( 2006 ) . Imaging dislocation cores – the way forward . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 86 , ( 29-31 ) 4781 - 4796 .

Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ ( 2006 ) . Microstructure of epitaxial scandium nitride films grown on silicon . Applied Surface Science vol. 252 , ( 24 ) 8385 - 8387 .

Spencer JP, Humphreys CJ ( 2006 ) . A multiple scattering transport theory for electron . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 42 , ( 4 ) 433 - 451 .

Buckley-golder IM, Humphreys CJ ( 2006 ) . A theoretical study of temperature distributions during Czochralski crystal growth . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 39 , ( 1 ) 41 - 57 .

Cherns D, Hetherington CJD, Humphreys CJ ( 2006 ) . The atomic structure of the NiSi2-(001)Si interface . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 49 , ( 1 ) 165 - 177 .

Humphreys CJ, Hirsch PB ( 2006 ) . Absorption parameters in electron diffraction theory . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 18 , ( 151 ) 115 - 122 .

Humphreys CJ, Howie A, Booker GR ( 2006 ) . Some electron diffraction contrast effects at planar defects in crystals . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 15 , ( 135 ) 507 - 522 .

Kazemian P, Mentink SAM, Rodenburg C, Humphreys CJ ( 2006 ) . High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging . Journal of Applied Physics vol. 100 , ( 5 )

Spencer JP, Humphreys CJ, Hirsch PB ( 2006 ) . A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 26 , ( 1 ) 193 - 213 .

Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Bean JC ( 2006 ) . Dislocation nucleation near the critical thickness in GeSi/Si strained layers . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 59 , ( 5 ) 1059 - 1073 .

Berger SD, Salisbury IG, Milne RH, Imeson D, Humphreys CJ ( 2006 ) . Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation . Philosophical Magazine B vol. 55 , ( 3 ) 341 - 358 .

Kazemian P, Mentink SAM, Rodenburg C, Humphreys CJ ( 2006 ) . Quantitative secondary electron energy filtering in a scanning electron microscope and its applications . Ultramicroscopy vol. 107 , ( 2-3 ) 140 - 150 .

Moram MA, Barber ZH, Humphreys CJ, Joyce TB, Chalker PR ( 2006 ) . Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon . Journal of Applied Physics vol. 100 , ( 2 )

Oliver RA, Kappers MJ, Humphreys CJ ( 2006 ) . Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy . Applied Physics Letters vol. 89 , ( 1 )

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Costa PMFJ, Vickers ME, Datta R, Humphreys CJ et al. ( 2006 ) . High quantum efficiency InGaN/GaN structures emitting at 540 nm . physica status solidi (c) . vol. 3 , 1970 - 1973 .

Datta R, Humphreys CJ ( 2006 ) . Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphire . physica status solidi (c) . vol. 3 , 1750 - 1753 .

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Barnard JS, Humphreys CJ, Thrush EJ ( 2006 ) . Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells . physica status solidi (c) . vol. 3 , 2001 - 2004 .

Moldovan G, Phillips A, Thrush EJ, Humphreys CJ ( 2006 ) . Temperature current‐voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs . physica status solidi (c) . vol. 3 , 2145 - 2148 .

von Pezold J, Oliver RA, Kappers MJ, Bristowe PD, Humphreys CJ ( 2006 ) . The effect of Si on the growth mode of GaN . physica status solidi (c) . vol. 3 , 1570 - 1574 .

Graham DM, Dawson P, Zhang Y, Costa PMFJ, Kappers MJ, Humphreys CJ, Thrush EJ ( 2006 ) . The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures . physica status solidi (c) . vol. 3 , 2005 - 2008 .

Oliver RA, Kappers MJ, van der Laak NK, Humphreys CJ ( 2006 ) . Three methods for the growth of InGaN nanostructures by MOVPE . physica status solidi (c) . vol. 3 , 1552 - 1556 .

van der Laak NK, Oliver RA, Barnard JS, Cherns PD, Kappers MJ, Humphreys CJ ( 2006 ) . Towards a better understanding of nano‐islands formed during atmospheric pressure MOVPE . physica status solidi (c) . vol. 3 , 1544 - 1547 .

McAleese C, Costa PMFJ, Graham DM, Xiu H, Barnard JS, Kappers MJ, Dawson P, Godfrey MJ et al. ( 2006 ) . Electric fields in AlGaN/GaN quantum well structures . physica status solidi (b) . vol. 243 , 1551 - 1559 .

Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ, Brown PD ( 2006 ) . Effects of KOH etching on the properties of Ga-polar n-GaN surfaces . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 86 , ( 16 ) 2315 - 2327 .

Kazemian P, Twitchett AC, Humphreys CJ, Rodenburg C ( 2006 ) . Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens . Applied Physics Letters vol. 88 , ( 21 )

Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P et al. ( 2006 ) . A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers . physica status solidi (a) – applications and materials science vol. 203 , ( 7 ) 1819 - 1823 .

Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ, Graham DM, Dawson P, Godfrey MJ et al. ( 2006 ) . Misfit dislocations in In‐rich InGaN/GaN quantum well structures . physica status solidi (a) – applications and materials science . vol. 203 , 1729 - 1732 .

Charles MB, Zhang Y, Kappers MJ, Humphreys CJ ( 2006 ) . Progress in MOVPE growth of crack‐free AlGaN based Bragg reflectors on Si(111) . physica status solidi (a) – applications and materials science . vol. 203 , 1618 - 1621 .

Cherns PD, McAleese C, Barnard JS, Kappers MJ, Humphreys CJ ( 2006 ) . A TEM investigation of crack reduction in AlGaN/GaN heterostructures using an AlN interlayer . Materials Research Society Symposium Proceedings . vol. 892 , 697 - 702 .

Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ ( 2006 ) . Microstructure and strain-free lattice parameters of Sc<inf>x</inf>Ga <inf>1-x</inf>N films . Materials Research Society Symposium Proceedings . vol. 892 , 723 - 727 .

Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ ( 2006 ) . Misfit dislocations in green-emitting InGaN/GaN quantum well structures . Materials Research Society Symposium Proceedings . vol. 892 , 639 - 643 .

Van Der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ ( 2006 ) . Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wells . Materials Research Society Symposium Proceedings . vol. 892 , 831 - 836 .

Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ ( 2006 ) . SiH<inf>4</inf> exposure of GaN surfaces: A useful tool for highlighting dislocations . Materials Research Society Symposium Proceedings . vol. 892 , 631 - 636 .

Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ, Humphreys CJ ( 2006 ) . The mean inner potential of GaN measured from nanowires using off-axis electron holography . Materials Research Society Symposium Proceedings . vol. 892 , 209 - 214 .

Kenyon AJ, Chryssou CE, Smeeton TM, Humphreys CJ, Hole DE ( 2006 ) . Sensitisation of erbium luminescence in erbium-implanted alumina . Optical Materials . vol. 28 , 655 - 659 .

Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ et al. ( 2006 ) . Two-photon absorption from single InGaN/GaN quantum dots . Physica E Low-dimensional Systems and Nanostructures vol. 32 , ( 1-2 ) 119 - 122 .

Smeeton TM, Humphreys CJ, Barnard JS, Kappers MJ ( 2006 ) . The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy . Journal of Materials Science . vol. 41 , 2729 - 2737 .

Thomas LE, Humphreys CJ ( 2006 ) . Kikuchi patterns in a high voltage electron microscope . physica status solidi (a) – applications and materials science vol. 3 , ( 3 ) 599 - 615 .

Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ ( 2006 ) . Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 . Journal of Crystal Growth vol. 289 , ( 2 ) 506 - 514 .

Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S, Ries M ( 2006 ) . Fe‐Pd‐Bimetallpartikel auf SiO2‐Trägern – Bildung aus Heterometallclustern und katalytische Aktivität . Angewandte Chemie vol. 100 , ( 7 ) 972 - 973 .

Humphreys CJ ( 2006 ) . Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0 . Angewandte Chemie vol. 101 , ( 12 ) 1803 - 1804 .

Smeeton T, Humphreys C ( 2006 ) . Perspectives on Electronic and Optoelectronic Materials . Springer Handbook of Electronic and Photonic Materials , Springer Nature

Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ ( 2006 ) . SiH₄ exposure of GaN surfaces:: A useful tool for highlighting dislocations . GAN, AIN, INN AND RELATED MATERIALS . vol. 892 , 631 - + .

Cherns PD, McAleese C, Barnard JS, Kappers MJ, Humphreys CJ ( 2005 ) . A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer . MRS Advances vol. 892 , ( 1 )

Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ ( 2005 ) . Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films . MRS Advances vol. 892 , ( 1 )

van der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ ( 2005 ) . Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells . MRS Advances vol. 892 , ( 1 )

Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ, Humphreys CJ ( 2005 ) . Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells . Journal of Applied Physics vol. 98 , ( 5 )

Charles MB, Kappers MJ, Humphreys CJ ( 2005 ) . Growth of uncracked Al<inf>0.80</inf>Ga<inf>0.20</inf>/GaN DBR on Si(111) . Materials Research Society Symposium Proceedings . vol. 831 , 155 - 159 .

Datta R, Kappers MJ, Barnard JS, Humphreys CJ ( 2005 ) . Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE . Materials Research Society Symposium Proceedings . vol. 831 , 405 - 410 .

Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ et al. ( 2005 ) . Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field . Applied Physics Letters vol. 86 , ( 21 )

Vickers ME, Kappers MJ, Datta R, McAleese C, Smeeton TM, Rayment FDG, Humphreys CJ ( 2005 ) . In-plane imperfections in GaN studied by x-ray diffraction . Journal of Physics D . vol. 38 ,

Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ et al. ( 2005 ) . Optical and microstructural studies of InGaN∕GaN single-quantum-well structures . Journal of Applied Physics vol. 97 , ( 10 )

Petford AK, Humphreys CJ ( 2005 ) . Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) study . Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials vol. 42 , ( 3 ) 224 - 229 .

Taylor RA, Robinson JW, Rice JH, Lee KH, Jarjour A, Na JH, Yasin S, Oliver RA et al. ( 2005 ) . Time-resolved dynamics in single InGaN quantum dots (Invited Paper) . Proceedings of SPIE--the International Society for Optical Engineering . Conference: Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX vol. 5725 , 296 - 308 .

Charles MB, Kappers MJ, Humphreys CJ ( 2005 ) . The effect of AlGaN and SiN interlayers on GaN/Si(111) . physica status solidi (c) . vol. 2 , 956 - 959 .

Cherns PD, McAleese C, Kappers MJ, Humphreys CJ ( 2005 ) . A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures . Springer Proceedings in Physics . vol. 107 , 55 - 58 .

Ofori AP, Rossouw CJ, Humphreys CJ ( 2005 ) . Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI . Acta Materialia vol. 53 , ( 1 ) 97 - 110 .

Oliver RA, van der Laak NK, Kappers MJ, Humphreys CJ ( 2005 ) . Evolution of InGaN/GaN nanostructures and wetting layers during annealing . Springer Proceedings in Physics . vol. 107 , 29 - 32 .

Barnard JS, Graham DM, Smeeton TM, Kappers MJ, Dawson P, Godfrey M, Humphreys CJ ( 2005 ) . InGaN-GaN quantum wells: their luminescent and nano-structural properties . MICROSCOPY OF SEMICONDUCTING MATERIALS . vol. 107 , 25 - 28 .

Datta R, Kappers MJ, Barnard JS, Humphreys CJ ( 2005 ) . Reduction of threading dislocation density using in-situ SiNx interlayers . Springer Proceedings in Physics . vol. 107 , 59 - 62 .

Wong ASW, Ho GW, Costa PMFJ, Oliver RA, Humphreys CJ ( 2005 ) . Self-catalytic growth of gallium nitride nanoneedles under Garich conditions . Springer Proceedings in Physics . vol. 107 , 287 - 290 .

Lee KH, Robinson WJ, Rice HJ, Na JH, Taylor AR, Oliver RA, Kappers MJ, Humphreys CJ ( 2005 ) . Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot . Conference: NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005.5 - 6 .

van der Laak NK, Oliver RA, Kappers MJ, McAleese C, Humphreys CJ ( 2005 ) . Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes . Springer Proceedings in Physics . vol. 107 , 13 - 16 .

Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD ( 2004 ) . Growth modes in heteroepitaxy of InGaN on GaN . Journal of Applied Physics vol. 97 , ( 1 )

McAleese C, Kappers MJ, Rayment FDG, Cherns P, Humphreys CJ ( 2004 ) . Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN . Journal of Crystal Growth . vol. 272 , 475 - 480 .

Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD ( 2004 ) . The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy . Journal of Crystal Growth . vol. 272 , 393 - 399 .

Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ, Hole DE ( 2004 ) . Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina . Applied Physics Letters vol. 85 , ( 22 ) 5200 - 5202 .

Humphreys C ( 2004 ) . Materials science and engineering in Britain . Advanced Materials vol. 1 , ( 8‐9 ) 249 - 250 .

Datta R, Kappers MJ, Barnard JS, Humphreys CJ ( 2004 ) . Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image . Applied Physics Letters vol. 85 , ( 16 ) 3411 - 3413 .

Datta R, Kappers MJ, Vickers ME, Barnard JS, Humphreys CJ ( 2004 ) . Growth and characterisation of GaN with reduced dislocation density . Superlattices and Microstructures . vol. 36 , 393 - 401 .

Yan J, Kappers MJ, Crossley A, McAleese C, Phillips WA, Humphreys CJ ( 2004 ) . Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN . physica status solidi (b) . vol. 241 , 2820 - 2824 .

Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2004 ) . Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots . IEEE Transactions on Nanotechnology vol. 3 , ( 3 ) 343 - 347 .

Yan J, Kappers MJ, Barber ZH, Humphreys CJ ( 2004 ) . Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN . Applied Surface Science . vol. 234 , 328 - 332 .

KAZEMIAN P ( 2004 ) . Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM . Microelectronic Engineering . vol. 73-74 , 948 - 953 .

Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ ( 2004 ) . Temporal variation in photoluminescence from single InGaN quantum dots . Applied Physics Letters vol. 84 , ( 20 ) 4110 - 4112 .

Moldovan G, Harrison I, Humphreys CJ, Kappers M, Brown PD ( 2004 ) . Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts . Materials Science and Technology vol. 20 , ( 4 ) 533 - 538 .

Kaestner B, Schönjahn C, Humphreys CJ ( 2004 ) . Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope . Applied Physics Letters vol. 84 , ( 12 ) 2109 - 2111 .

Campbell LC, Wilkinson MJ, Manz A, Camilleri P, Humphreys CJ ( 2004 ) . Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries . Lab on a Chip vol. 4 , ( 3 ) 225 - 229 .

Taylor RA, Robinson JW, Rice JH, Jarjour A, Smith JD, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2004 ) . Dynamics of single InGaN quantum dots . Physica E Low-dimensional Systems and Nanostructures . vol. 21 , 285 - 289 .

Rice JH, Oliver RA, Robinson JW, Smith JD, Taylor RA, Briggs GAD, Kappers MJ, Humphreys CJ et al. ( 2004 ) . InGaN quantum dots grown by MOVPE via a droplet epitaxy route . Physica E Low-dimensional Systems and Nanostructures . vol. 21 , 546 - 550 .

Belyaev AE, Makarovsky O, Walker DJ, Eaves L, Foxon CT, Novikov SV, Zhao LX, Dykeman RI et al. ( 2004 ) . Resonance and current instabilities in AlN/GaN resonant tunnelling diodes . Physica E Low-dimensional Systems and Nanostructures . vol. 21 , 752 - 755 .

Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2004 ) . Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dots . physica status solidi (c) . vol. 1 , 568 - 572 .

Ofori AP, Humpherys CJ, Tin S, Jones CN ( 2004 ) . A TEM Study of the Effect of Platinum Group Metals in Advanced Single Crystal Nickel-Base Superalloys . Conference: Superalloys 2004 (Tenth International Symposium)787 - 794 .

Kazemian P, Rodenburg C, Humphreys CJ ( 2004 ) . Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM . Microelectronic Engineering . vol. 73-74 , 948 - 953 .

Chen GS, Chen G-S, Hsiao HH, Louh RF, Humphreys CJ ( 2004 ) . Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α ­ MnO2 Using High-Pressure and High-Temperature Sputtering . Electrochemical and Solid-State Letters vol. 7 , ( 8 ) a235 - a238 .

Hobbs RA, Tin S, Rae CMF, Broomfield RW, Humphreys CJ ( 2004 ) . Solidification Characteristics of Advanced Nickel-Base Single Crystal Superalloys . Conference: Superalloys 2004 (Tenth International Symposium)819 - 825 .

Humphreys CJ ( 2003 ) . Book Review: Transmission Electron Microscopy. By L. Reimer . Angewandte Chemie International Edition vol. 28 , ( 12 ) 1763 - 1764 .

Humphreys C ( 2003 ) . Materials Science and Engineering in Britain . Angewandte Chemie International Edition vol. 28 , ( 8 ) 1077 - 1078 .

Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S, Ries M ( 2003 ) . Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity . Angewandte Chemie International Edition vol. 27 , ( 7 ) 927 - 929 .

Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ ( 2003 ) . Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope . Applied Physics Letters vol. 83 , ( 26 ) 5419 - 5421 .

Arutyunov NY, Emtsev VV, Mikhailin AV, Humphreys CJ ( 2003 ) . Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data . Physica B Condensed Matter . vol. 340 , 412 - 415 .

Foxon CT, Novikov SV, Belyaev AE, Zhao LX, Makarovsky O, Walker DJ, Eaves L, Dykeman RI et al. ( 2003 ) . Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures . physica status solidi (c) . vol. 0 , 2389 - 2392 .

Oliver RA, Kappers MJ, Rice JH, Smith JD, Taylor RA, Humphreys CJ, Briggs GAD ( 2003 ) . Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal . physica status solidi (c) . vol. 0 , 2515 - 2519 .

Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ ( 2003 ) . Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy . physica status solidi (b) . vol. 240 , 297 - 300 .

Graham DM, Vala AS, Dawson P, Godfrey MJ, Kappers MJ, Smeeton TM, Barnard JS, Humphreys CJ et al. ( 2003 ) . Exciton localization in InGaN/GaN single quantum well structures . physica status solidi (b) . vol. 240 , 344 - 347 .

Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ, Humphreys CJ ( 2003 ) . Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] . Applied Physics Letters vol. 83 , ( 17 ) 3626 - 3627 .

Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al. ( 2003 ) . Time-resolved dynamics in single InGaN quantum dots . Applied Physics Letters vol. 83 , ( 13 ) 2674 - 2676 .

Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ, Foxon CT ( 2003 ) . Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates . Journal of Crystal Growth vol. 256 , ( 3-4 ) 237 - 242 .

Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS, Humphreys CJ ( 2003 ) . Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering . Journal of Applied Physics vol. 94 , ( 3 ) 1565 - 1574 .

Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD, Taylor RA ( 2003 ) . InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal . Applied Physics Letters vol. 83 , ( 4 ) 755 - 757 .

Schönjahn C, Broom RF, Humphreys CJ, Howie A, Mentink SAM ( 2003 ) . Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector . Applied Physics Letters vol. 83 , ( 2 ) 293 - 295 .

Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ, Bougrioua Z ( 2003 ) . Detailed interpretation of electron transport in n-GaN . Journal of Applied Physics vol. 93 , ( 11 ) 9095 - 9103 .

Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ, Humphreys CJ ( 2003 ) . Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm . Applied Physics Letters vol. 82 , ( 17 ) 2755 - 2757 .

Keast VJ, Kappers MJ, Humphreys CJ ( 2003 ) . Electron energy‐loss near edge structure (ELNES) of InGaN quantum wells . Journal of Microscopy . vol. 210 , 89 - 93 .

Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ, Humphreys CJ ( 2003 ) . Arsenic incorporation in GaN during growth by molecular beam epitaxy . Journal of Crystal Growth . vol. 251 , 510 - 514 .

Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG et al. ( 2003 ) . GaN/InGaN quantum wells grown in a close coupled showerhead reactor . Journal of Crystal Growth . vol. 248 , 518 - 522 .

Liu C, Dunin-Borkowski R, Boothroyd C, Brown P, Humphreys C ( 2003 ) . Characterization of Ultrathin Doping Layers in Semiconductors . Microscopy and Microanalysis vol. 3 , ( 4 ) 352 - 363 .

Schönjahn C, Humphreys CJ, Glick M ( 2002 ) . Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors . Journal of Applied Physics vol. 92 , ( 12 ) 7667 - 7671 .

Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW ( 2002 ) . Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)] . Applied Physics Letters vol. 81 , ( 16 ) 3102 - 3103 .

Keast VJ, Scott AJ, Kappers MJ, Foxon CT, Humphreys CJ ( 2002 ) . Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy . Physical Review B vol. 66 , ( 12 )

Schönjahn C, Humphreys C, Glick M ( 2002 ) . Energy filtered imaging in a FEG-SEM for enhanced dopant contrast . Microscopy and Microanalysis . vol. 8 , 718 - 719 .

Thrush EJ, Kappers MJ, Dawson P, Graham D, Barnard JS, Vickers ME, Considine L, Mullins JT et al. ( 2002 ) . GaN–InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor . physica status solidi (a) – applications and materials science . vol. 192 , 354 - 359 .

Elliott SL, Broom RF, Humphreys CJ ( 2002 ) . Dopant profiling with the scanning electron microscope—A study of Si . Journal of Applied Physics vol. 91 , ( 11 ) 9116 - 9122 .

Tanner BK, Humphreys CJ ( 2002 ) . High resolution divergent-beam X-ray topography . Journal of Physics D vol. 3 , ( 7 )

Chen GS, Lee PY, Boothroyd CB, Humphreys CJ ( 2002 ) . Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation . Journal of Vacuum Science & Technology A Vacuum Surfaces and Films vol. 20 , ( 3 ) 986 - 990 .

Humphreys CJ ( 2002 ) . Chapter 2.9.1 Theory of Electron Scattering and Electron Diffraction . Scattering , Elsevier

Thomas SM, Humphreys C ( 2002 ) . Colin Humphreys - A practical physicist having fun in the world of materials . MATERIALS WORLD vol. 10 , ( 1 ) 11 - 11 .

Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ ( 2002 ) . Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms . Journal of Applied Physics vol. 91 , ( 1 ) 367 - 374 .

LIU, BOOTHROYD, HUMPHREYS ( 2001 ) . Energy‐filtered transmission electron microscopy of multilayers in semiconductors . Journal of Microscopy vol. 194 , ( 1 ) 58 - 70 .

LIU, PRESTON, BOOTHROYD, HUMPHREYS ( 2001 ) . Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images . Journal of Microscopy vol. 194 , ( 1 ) 171 - 182 .

Bright AN, Sharma N, Humphreys CJ ( 2001 ) . Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy . Microscopy vol. 50 , ( 6 ) 489 - 495 .

Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW ( 2001 ) . Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells . Applied Physics Letters vol. 79 , ( 16 ) 2594 - 2596 .

Cho HK, Lee JY, Kim CS, Yang GM, Sharma N, Humphreys C ( 2001 ) . Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition . Journal of Crystal Growth vol. 231 , ( 4 ) 466 - 473 .

Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T et al. ( 2001 ) . Chemical mapping of InGaN MQWs . Journal of Crystal Growth vol. 230 , ( 3-4 ) 438 - 441 .

Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L et al. ( 2001 ) . Material optimisation for AlGaN/GaN HFET applications . Journal of Crystal Growth vol. 230 , ( 3-4 ) 573 - 578 .

Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ, Thrush EJ ( 2001 ) . Observation of thermally activated conduction at a GaN–sapphire interface . Applied Physics Letters vol. 79 , ( 8 ) 1121 - 1123 .

Ofori AP, Humphreys CJ ( 2001 ) . Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis) . Microscopy and Microanalysis vol. 7 , ( S2 ) 346 - 347 .

Keast VJ, Sharma N, Kappers M, Humphreys CJ ( 2001 ) . Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells . Microscopy and Microanalysis vol. 7 , ( S2 ) 1182 - 1183 .

Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N, Humphreys C ( 2001 ) . Effects of electron-beam exposure on a ruthenium nanocluster polymer . Journal of Applied Physics vol. 90 , ( 2 ) 947 - 952 .

Pankhurst DA, Botton GA, Humphreys CJ ( 2001 ) . Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary . Physical Review B vol. 63 , ( 20 )

Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ ( 2001 ) . Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals . Materials Science and Engineering B vol. 81 , ( 1-3 ) 19 - 22 .

Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ, Davies R ( 2001 ) . Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy . Journal of Applied Physics vol. 89 , ( 6 ) 3143 - 3150 .

Bright AN, Tricker DM, Humphreys CJ, Davies R ( 2001 ) . A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN . Journal of Electronic Materials vol. 30 , ( 3 ) l13 - l16 .

Humphreys CJ ( 2001 ) . The scattering of fast electrons by crystals . Reports on Progress in Physics vol. 42 , ( 11 )

Keast VJ, Scott AJ, Kappers MJ, Humphreys CJ ( 2001 ) . Electronic structure of GaN studied with electron energy loss spectroscopy and density functional theory . ELECTRON MICROSCOPY AND ANALYSIS 2001 . 441 - 444 .

Bright AN, Humphreys CJ ( 2001 ) . Identification of interfacial layers in Ohmic contacts to n-type GaN and Al<i>_x</i>Ga_1-<i>x</i>N/GaN heterostructures using high-resolution electron microscopy . PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES . vol. 81 , 1725 - 1744 .

Ramloll CS, Bougrioua Z, Barnard JS, Humphreys CJ, Moerman I ( 2001 ) . Microstructural aspects of the early stages of GaN growth by MOCVD . ELECTRON MICROSCOPY AND ANALYSIS 2001 . 469 - 472 .

Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD, Humphreys CJ ( 2001 ) . Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy . Thin Solid Films vol. 381 , ( 2 ) 231 - 235 .

Barnard JS, Sharma N, Cho HK, Humphreys CJ ( 2001 ) . The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study . ELECTRON MICROSCOPY AND ANALYSIS 2001 . 481 - 484 .

Saifullah MSM, Kurihara K, Humphreys CJ ( 2000 ) . Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists . Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 18 , ( 6 ) 2737 - 2744 .

Botton GA, Nishino Y, Humphreys CJ ( 2000 ) . Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure . Intermetallics vol. 8 , ( 9-11 ) 1209 - 1214 .

Fairbank GB, Humphreys CJ, Kelly A, Jones CN ( 2000 ) . Ultra-high temperature intermetallics for the third millennium . Intermetallics . vol. 8 , 1091 - 1100 .

Sharma N, Thomas P, Tricker D, Humphreys C ( 2000 ) . Chemical mapping and formation of V-defects in InGaN multiple quantum wells . Applied Physics Letters vol. 77 , ( 9 ) 1274 - 1276 .

Pankhurst DA, Botton GA, Humphreys CJ ( 2000 ) . The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl . Microscopy and Microanalysis vol. 6 , ( S2 ) 186 - 187 .

Pekarskaya E, Botton GA, Jones CN, Humphreys CJ ( 2000 ) . The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy . Intermetallics vol. 8 , ( 8 ) 903 - 913 .

Humphreys C ( 2000 ) . Facing up to the future of materials science and technology . Materials World vol. 8 , ( 4 ) 11 - 13 .

Humphreys C ( 2000 ) . Oxbridge and the public schools . MATERIALS WORLD vol. 8 , ( 1 ) 2 - 3 .

Humphreys C ( 2000 ) . THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL . Vetus Testamentum vol. 50 , ( 3 ) 323 - 328 .

Tricker DM, Jacobs K, Humphreys CJ ( 1999 ) . Characterisation of Epitaxial Laterally Overgrown Gallium Nitride Using Transmission Electron Microscopy . physica status solidi (b) . vol. 216 , 633 - 637 .

Saifullah MSM, Botton GA, Boothroyd CB, Humphreys CJ ( 1999 ) . Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3 . Journal of Applied Physics vol. 86 , ( 5 ) 2499 - 2504 .

Humphreys CJ ( 1999 ) . Electrons seen in orbit . Nature vol. 401 , ( 6748 ) 21 - 22 .

Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ et al. ( 1999 ) . Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) . Journal of Crystal Growth vol. 204 , ( 4 ) 419 - 428 .

Botton GA, Humphreys CJ ( 1999 ) . Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory2This paper was originally presented at the Kyoto Workshop on High Temperature Intermetallics in May 1998.2 . Intermetallics . vol. 7 , 829 - 833 .

Natusch MKH, Humphreys CJ, Menon N, Krivanek OL ( 1999 ) . Experimental and theoretical study of the detection limits in electron energy-loss spectroscopy . Micron . vol. 30 , 173 - 183 .

Humphreys CJ ( 1999 ) . A two-phase charge-density real-space-pairing model of high-T<inf>c</inf> superconductivity . Acta Crystallographica Section A: Foundations of Crystallography vol. 55 , ( 2 PART I ) 228 - 233 .

Humphreys CJ ( 1999 ) . A two‐phase charge‐density real‐space‐pairing model of high‐Tc superconductivity . Acta Crystallographica Section A: Foundations and advances vol. 55 , ( 2‐1 ) 228 - 233 .

Walther T, Humphreys CJ ( 1999 ) . A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy . Journal of Crystal Growth vol. 197 , ( 1-2 ) 113 - 128 .

Yonenaga I, Lim S, Shindo D, Brown PD, Humphreys CJ ( 1999 ) . Structure and Climb of Faulted Dipoles in GaAs . physica status solidi (a) – applications and materials science vol. 171 , ( 1 ) 53 - 57 .

Bright AN, Brown PD, Tricker DM, Jeffs N, Foxon CT, Humphreys CJ ( 1999 ) . A TEM assessment of GaN/SiC layers grown by MBE . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 415 - 418 .

Humphreys CJ, Bright AN, Elliott SL ( 1999 ) . Advances in high resolution imaging and microanalysis of Si, GaAs and GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 1 - 10 .

Bright AN, Tricker DM, Davies R, Beanland R, Thomas PJ, Lloyd SJ, Midgley PA, Humphreys CJ ( 1999 ) . Characterisation of ohmic contacts to <i>n</i>-GaN using transmission electron microscopy . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 597 - 600 .

Sharma N, Keast VJ, Iwayama TS, Boyd I, Humphreys CJ ( 1999 ) . Characterisation of silicon nanocrystals in silica and correlation with luminescence . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 589 - 592 .

Keast VJ, Midgley PA, Lloyd SJ, Thomas PJ, Weyland M, Boothroyd CB, Humphreys CJ ( 1999 ) . Composition of grain boundaries and interfaces: A comparison of modern analytical techniques using a 300 kV FEGTEM . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 35 - 38 .

Keast VJ, Misra A, Kung H, Mitchell TE, Humphreys CJ ( 1999 ) . Compositional mapping of nanoscale metallic multilayers: a comparison of techniques . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 211 - 214 .

Humphreys CJ ( 1999 ) . Convergent Beam Electron Diffraction . NATO Science Series E: . 325 - 337 .

Etheridge J, Moodie AF, Humphreys CJ ( 1999 ) . DIRECT MEASUREMENT OF PHASE-INVARIANTS AND STRUCTURE AMPLITUDES FROM 3 BEAM CBED PATTERNS . ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES . vol. 55 , 24 - 24 .

Pekarskaya E, Jones CN, Humphreys CJ ( 1999 ) . Dislocations in a multiphase Ni-Al-Fe alloy . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 463 - 466 .

Elliott SL, Broom RF, Humphreys CJ, Thrush EJ, Considine L, Thomson DB, de Boer WB ( 1999 ) . FEG-SEM imaging of semiconductor dopant contrast . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 727 - 730 .

Moodie AF, Etheridge J, Humphreys CJ ( 1999 ) . GEOMETRY OF THREE BEAM PHASE DETERMINATION . ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES . vol. 55 , 24 - 24 .

Brown PD, Weyher JL, Boothroyd CB, Foord DT, Zauner ARA, Hageman PR, Larsen PK, Bockowski M et al. ( 1999 ) . Inversion domain nucleation in homoepitaxial GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS . 381 - 384 .

Pankhurst DA, Botton GA, Humphreys CJ ( 1999 ) . Obtaining bonding information from EELS near-edge structures: grain-boundaries in NiAl . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 67 - 70 .

Zhang JG, McCartney DG, Humphreys CJ ( 1999 ) . On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors . Superconductor Science and Technology vol. 3 , ( 4 )

Humphreys CJ, Botton GA ( 1999 ) . Probing atomic bonding using fast electrons . TOPICS IN ELECTRON DIFFRACTION AND MICROSCOPY OF MATERIALS . 65 - 78 .

Bullock JF, Titchmarsh JM, Humphreys CJ ( 1999 ) . STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures . Semiconductor Science and Technology vol. 1 , ( 6 )

Chen GS, Humphreys CJ ( 1999 ) . Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials . Journal of Applied Physics vol. 85 , ( 1 ) 148 - 152 .

Whitfield HJ, Moodie AF, Etheridge J, Humphreys CJ ( 1999 ) . THE VALIDITY OF QUASI-KINEMATIC THEORY IN ELECTRON CRYSTALLOGRAPHY . ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES . vol. 55 , 24 - 24 .

Elliott SL, Broom RF, Humphreys CJ ( 1999 ) . Temperature and energy dependence of SEM dopant contrast . ELECTRON MICROSCOPY AND ANALYSIS 1999 . 87 - 90 .

Lim S-H, Shindo D, Yonenaga I, Brown PD, Humphreys CJ ( 1998 ) . Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs . Physical Review Letters vol. 81 , ( 24 ) 5350 - 5353 .

Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al. ( 1998 ) . High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux . Japanese Journal of Applied Physics vol. 37 , ( 12R )

Ogawa H, Watanabe M, Ohsato H, Humphreys C ( 1998 ) . Microwave dielectric properties of (Y<inf>2-x</inf>R<inf>x</inf>)BaCuO<inf>5</inf> (R = rare-earth) solid solutions . IEEE International Symposium on Applications of Ferroelectrics517 - 520 .

Humphreys C ( 1998 ) . Stuff of dreams . New Scientist vol. 157 , ( 2126 ) 44 - 45 .

Yonenaga I, Brown PD, Humphreys CJ ( 1998 ) . Climb of dislocations in GaAs by irradiation . Materials Science and Engineering A vol. 253 , ( 1-2 ) 148 - 150 .

Watanabe M, Ogawa H, Ohsato H, Humphreys C ( 1998 ) . Microwave Dielectric Properties of Y2Ba(Cu1-xZnx)O5 Solid Solutions . Japanese Journal of Applied Physics . vol. 37 ,

Chen GS, Boothroyd CB, Humphreys CJ ( 1998 ) . Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 78 , ( 2 ) 491 - 506 .

Humphreys C ( 1998 ) . Shaping the future of materials science . Materials World vol. 6 , ( 6 ) 352 - 355 .

Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y, Humphreys CJ ( 1998 ) . Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy . Journal of Applied Physics vol. 83 , ( 10 ) 5504 - 5508 .

Kaiser U, Brown PD, Chuvilin A, Khodos II, Fissel A, Richter W, Preston A, Humphreys CJ ( 1997 ) . Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE . vol. 264-268 , 259 - 264 .

Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ, Sutton AP ( 1998 ) . Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study . Physical Review B vol. 57 , ( 3 ) 1505 - 1509 .

Tricker DM, Bright AN, Brown PD, Korakakis D, Cheng TS, Foxon CT, Humphreys CJ ( 1998 ) . A TEM study of a GaN/InGaN superlattice structure grown by MBE . ELECTRON MICROSCOPY 1998, VOL 3 . 393 - 394 .

Tricker DM, Brown PD, Cheng TS, Foxon CT, Humphreys CJ ( 1998 ) . A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates . Applied Surface Science . vol. 123 , 22 - 27 .

Pankhurst DA, Botton GA, Humphreys CJ ( 1998 ) . A joint theoretical and experimental investigation of bonding character at a grain boundary in the B2 compound NiAl . ELECTRON MICROSCOPY 1998, VOL 2 . 643 - 644 .

Humphreys CJ ( 1998 ) . A microstructural model of high-<i>T_c</i> superconductivity . ELECTRON . 124 - 134 .

Natusch MKH, Botton GA, Humphreys CJ ( 1998 ) . A simple and efficient way to obtain more information about interband transitions from an electron energy-loss spectrum in the low-loss region . ELECTRON MICROSCOPY 1998, VOL 3 . 627 - 628 .

Natusch MKH, Botton GA, Krivanek OL, Humphreys CJ ( 1998 ) . Characterisation of a Gatan Imaging Filter mounted on a dedicated STEM . ELECTRON MICROSCOPY 1998, VOL 1 . 95 - 96 .

Natusch MKH, Botton GA, Krivanek OL, Humphreys CJ ( 1998 ) . Detection limits in electron energy-loss spectroscopy and energy-filtered imaging . ELECTRON MICROSCOPY 1998, VOL 3 . 651 - 652 .

Etheridge J, Moodie AF, Humphreys CJ ( 1998 ) . Direct measurement of structure amplitudes from three beam interactions . ELECTRON MICROSCOPY 1998, VOL 3 . 737 - 738 .

Natusch MKH, Botton GA, Humphreys CJ ( 1998 ) . Evidence for charged defects in wurtzite GaN from spatially resolved electron energy-loss spectroscopy . ELECTRON MICROSCOPY 1998, VOL 3 . 391 - 392 .

Campbell LCI, Humphreys CJ ( 1998 ) . Experimental investigation of the effect of defocus on beam diameter in focused ion beam milling . ELECTRON MICROSCOPY 1998, VOL 3 . 157 - 158 .

Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al. ( 1998 ) . High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux . JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS vol. 37 , ( 12A ) 6556 - 6561 .

Saifullah MSM, Boothroyd CB, Botton GA, Humphreys CJ ( 1998 ) . Irradiation damage of inorganic resists on a silicon substrate . ELECTRON . 531 - 537 .

Natusch MKH, Botton GA, Humphreys CJ ( 1998 ) . Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy . GROWTH AND PROCESSING OF ELECTRONIC MATERIALS . 30 - 36 .

Watanabe M, Ogawa H, Ohsato H, Humphreys C ( 1998 ) . Microwave dielectric properties of Y<inf>2</inf>Ba(Cu<inf>1-x</inf>Zn<inf>x</inf>)O<inf>5</inf> solid solutions . Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37 , ( 9 PART B ) 5360 - 5363 .

Bright A, Brown PD, Tricker D, Humphreys C ( 1998 ) . RHEED for the rapid structural assessment of epitaxial GaN and metallisation layers . ELECTRON MICROSCOPY 1998, VOL 3 . 439 - 440 .

Liu CP, Boothroyd CB, Humphreys CJ ( 1998 ) . The Compton scattering distribution from InP by electron spectroscopic diffraction . ELECTRON . 456 - 463 .

Moodie AF, Etheridge J, Humphreys CJ ( 1998 ) . The Coulomb interaction and the direct measurement of structural phase . ELECTRON . 235 - 246 .

Humphreys C ( 1998 ) . The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI . Vetus Testamentum vol. 48 , ( 2 ) 196 - 213 .

Natusch MKH, Botton GA, Humphreys CJ, Krivanek OL ( 1998 ) . The ultimate detection limits of electron energy-loss spectroscopy . ELECTRON . 476 - 483 .

Chen GS, Humphreys CJ ( 1997 ) . Investigation of the proximity effect in amorphous AlF3 electron-beam resists . Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 15 , ( 6 ) 1954 - 1960 .

Humphreys C ( 1997 ) . Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0 . European Review vol. 5 , ( 4 ) 443 - 445 .

Walther T, Humphreys CJ, Cullis AG ( 1997 ) . Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy . Applied Physics Letters vol. 71 , ( 6 ) 809 - 811 .

Botton GA, Humphreys CJ ( 1997 ) . Analysis of EELS near edge structures to study the bonding character in intermetallic alloys . Micron vol. 28 , ( 4 ) 313 - 319 .

Xin Y, Wallis D, Browning N, Sivananthan S, Pennycook S, Humphreys C ( 1997 ) . Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM . Microscopy and Microanalysis vol. 3 , ( S2 ) 461 - 462 .

Botton GA, Burnell G, Humphreys CJ, Yadav T, Withers JC ( 1997 ) . Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts . Journal of Physics and Chemistry of Solids vol. 58 , ( 7 ) 1091 - 1102 .

Wiezorek JMK, Humphreys CJ, Fraser HL ( 1997 ) . Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti Al . Philosophical Magazine Letters vol. 75 , ( 5 ) 281 - 290 .

Xin Y, Brown PD, Humphreys CJ, Cheng TS, Foxon CT ( 1997 ) . Domain boundaries in epitaxial wurtzite GaN . Applied Physics Letters vol. 70 , ( 10 ) 1308 - 1310 .

Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS, Foxon CT ( 1997 ) . Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy . Journal of Crystal Growth vol. 171 , ( 3-4 ) 321 - 332 .

Walther T, Humphreys CJ, Cullis AG, Robbins DJ ( 1997 ) . A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 47 - 54 .

Natusch MKH, Botton GA, Humphreys CJ ( 1997 ) . Developing a methodology for the electron energy-loss spectroscopy of defects in GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 213 - 216 .

Walther T, Humphreys CJ, Robbins DJ ( 1997 ) . Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron Microscopy . vol. 143-147 , 1135 - 1140 .

Xin Y, Brown PD, Cheng TS, Foxon CT, Humphreys CJ ( 1997 ) . Domain boundaries in epitaxial GaN grown on {(111)over-bar}B GaAs and GaP by molecular beam epitaxy . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 95 - 98 .

Botton GA, Guo G-Y, Temmerman WM, Humphreys CJ ( 1997 ) . Electron Energy Loss Spectroscopy as a Tool to Probe the Electronic Structure in Intermetallic Alloys . 175 - 180 .

Cheng TS, Foxon CT, Ren GB, Jeffs NJ, Orton JW, Novikov SV, Xin Y, Brown PD et al. ( 1997 ) . Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy . COMPOUND SEMICONDUCTORS 1996 . 259 - 262 .

Kaiser U, Brown PD, Jinschek J, Adamik M, Humphreys CJ, Karmann S, Fissel A, Pfennighaus K et al. ( 1997 ) . Microstructural investigations of silicon carbide and aluminium nitride MBE layers on silicon substrates . EUROPEAN JOURNAL OF CELL BIOLOGY . vol. 74 , 120 - 120 .

Tricker DM, Natusch MKH, Boothroyd CB, Xin Y, Brown PD, Cheng TS, Foxon CT, Humphreys CJ ( 1997 ) . Probing the effect of defects on band structure in GaN . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 217 - 220 .

Brown PD, Smith JP, Eccleston W, Humphreys CJ ( 1997 ) . Structural and electronic properties of partially crystallised silicon . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 427 - 430 .

Tatsuoka H, Brown PD, Xin Y, Isaji K, Kuwabara H, Nakanishi Y, Nakamura T, Fujiyasu H et al. ( 1997 ) . Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 59 - 62 .

Liu CP, Boothroyd CB, Brown PD, Humphreys CJ ( 1997 ) . The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 67 - 70 .

Liu CP, Brown PD, Boothroyd CB, Humphreys CJ ( 1997 ) . The effects of surface relaxation and ion thinning on δ-doped semiconductor cross-sections . MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 . 483 - 486 .

Brown PD, Humphreys CJ ( 1996 ) . Scanning transmission electron beam induced conductivity investigation of a Si/Si1− x Ge x /Si heterostructure . Journal of Applied Physics vol. 80 , ( 4 ) 2527 - 2529 .

Etheridge J, Moodie AF, Humphreys CJ ( 1996 ) . Direct determination of phase from three-beam convergent-beam diffraction patterns of centrosymmetric crystals . Acta Crystallographica Section A: Foundations and advances . vol. 52 , c54 - c54 .

Chen Q, Knowles KM, Humphreys CJ, Wu XF ( 1996 ) . Atom positions in the R-phase unit cell in TiNi shape memory alloy . Journal of Materials Science vol. 31 , ( 16 ) 4227 - 4231 .

Botton GA, Guo GY, Temmerman WM, Humphreys CJ ( 1996 ) . Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure . Physical Review B vol. 54 , ( 3 ) 1682 - 1691 .

Chen GS, Boothroyd CB, Humphreys CJ ( 1996 ) . Electron-beam induced crystallization transition in self-developing amorphous AlF3 resists . Applied Physics Letters vol. 69 , ( 2 ) 170 - 172 .

Inkson BJ, Humphreys CJ ( 1996 ) . High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 73 , ( 6 ) 1647 - 1661 .

Inkson BJ, Humphreys CJ ( 1996 ) . Dislocations at 120° order interfaces in TiAl . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 73 , ( 5 ) 1333 - 1345 .

Loginov YY, Brown PD, Humphreys CJ ( 1996 ) . Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions . Physics of the Solid State vol. 38 , ( 4 ) 692 - 697 .

Loginov YY, Brown PD, Humphreys CJ ( 1996 ) . Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs . Physics of the Solid State vol. 38 , ( 2 ) 272 - 277 .

Loginov YY, Brown PD, Humphreys CJ ( 1996 ) . Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs . Inorganic Materials vol. 32 , ( 1 ) 22 - 25 .

Peters MA, Humphreys CJ ( 1996 ) . Misfit control in NiTi/Ni₂TiAlβ/β′ alloys . STRUCTURAL INTERMETALLICS 1997 . 605 - 612 .

Wiezorek JMK, Court SA, Humphreys CJ ( 1995 ) . On the dissociation of prism plane superdislocations in Ti3Al . Philosophical Magazine Letters vol. 72 , ( 6 ) 393 - 403 .

Walther T, Humphreys CJ, Cullis AG, Robbins DJ ( 1995 ) . A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy . vol. 196-201 , 505 - 510 .

Loginov YY, Brown PD, Humphreys CJ ( 1995 ) . TEM Investigation of Point Defect Interactions in II-VI Compounds . vol. 196-201 , 1461 - 1466 .

Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T et al. ( 1995 ) . The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy . Journal of Crystal Growth vol. 156 , ( 3 ) 155 - 162 .

Walther T, Humphreys CJ, Grimshaw MP, Churchill AC ( 1995 ) . Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 72 , ( 4 ) 1015 - 1030 .

Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR, Humphreys CJ ( 1995 ) . Measurement of low-order structure factors for silicon from zone-axis CBED patterns . Ultramicroscopy vol. 60 , ( 2 ) 311 - 323 .

Wiezorek JMK, Humphreys CJ ( 1995 ) . On the hierarchy of planar fault energies in TiAl . Scripta Metallurgica et Materialia vol. 33 , ( 3 ) 451 - 458 .

Xin Y, Zhou W, Humphreys CJ ( 1995 ) . HREM studies of the (001) surface of YBa2Cu4O8 . Physica C: Superconductivity and its Applications vol. 249 , ( 3-4 ) 319 - 332 .

Brown PD, Loginov YY, Stobbs WM, Humphreys CJ ( 1995 ) . Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 72 , ( 1 ) 39 - 57 .

Inkson BJ, Humphreys CJ ( 1995 ) . High-resolution electron microscopy observation of a 1/2(112) superdislocation in TiAl . Philosophical Magazine Letters vol. 71 , ( 6 ) 307 - 312 .

Inkson BJ, Boothroyd CB, Humphreys CJ ( 1995 ) . Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase . Acta Metallurgica et Materialia vol. 43 , ( 4 ) 1429 - 1438 .

CAMPBELL J, HUMPHREYS C ( 1995 ) . A FRAMEWORK FOR THE FUTURE . MATERIALS WORLD vol. 3 , ( 6 ) 286 - 287 .

Wiezorek JMK, Botton G, Humphreys CJ, Fraser HL ( 1995 ) . A TEM study of dislocation decoration in gamma-TiAl . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 515 - 518 .

Morgan CJ, Boothroyd CB, Humphreys CJ ( 1995 ) . A comparative study of electron beam damage in crystalline and amorphous aluminium oxide . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 567 - 570 .

Walther T, Hetherington CJD, Humphreys CJ ( 1995 ) . A contribution to the quantitative comparison of experimental high-resolution electron micrographs and image simulations . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 53 - 56 .

Brown PD, Loginov YY, Boothroyd CB, Humphreys CJ ( 1995 ) . Artefacts within ion beam milled semiconductors . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 393 - 396 .

Wiezorek JMK, Preston AR, Humphreys CJ ( 1995 ) . Column approximation effects on partial dislocation weak beam images . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 455 - 458 .

Xin Y, Brown PD, Humphreys CJ ( 1995 ) . Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructures . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 87 - 90 .

Saifullah MSM, Boothroyd CB, Morgan CJ, Humphreys CJ ( 1995 ) . Electron beam nanolithography of FeF3 using a scanning transmission electron microscope . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 325 - 328 .

Yonenaga I, Brown PD, Burgess WG, Humphreys CJ ( 1995 ) . Faulted dipoles in Indium-doped GaAs . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 87 - 90 .

Inkson BJ, Humphreys CJ ( 1995 ) . HREM observation of omega-phase in an industrial TiAl alloy . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 547 - 550 .

Loginov YY, Brown PD, Humphreys CJ ( 1995 ) . Point defect interactions in doped II-VI compounds under ion and electron beam irradiation . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 431 - 434 .

Xin Y, Brown PD, Schaublin RE, Humphreys CJ ( 1995 ) . Relaxation of (001)Si/Si1-xGex/Si heterostructures . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 183 - 186 .

Brown PD, Humphreys CJ ( 1995 ) . STEBIC of Si/Si1-xGex/Si and high voltage REBIC of CdTe . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 701 - 704 .

Brown PD, Humphreys CJ ( 1995 ) . STEBIC of Si/Si1-xGex/Si heterostructures . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 285 - 288 .

Walther T, Boothroyd CB, Humphreys CJ ( 1995 ) . Strain relaxation induced local crystal tilts at Si/SiGe interfaces in cross-sectional transmission electron microscope specimens . MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 . vol. 146 , 11 - 16 .

Botton GA, Guo GY, Humphreys CJ ( 1995 ) . The bonding character of intermetallic alloys using EELS . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 535 - 538 .

Morgan CJ, Humphreys CJ ( 1995 ) . The dependence of the rate of electron beam damage in amorphous aluminium oxide on beam current density . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 579 - 582 .

Walther T, Humphreys CJ ( 1995 ) . The limitations of pattern recognition and displacement measurement techniques for evaluating HREM images of strained semiconductor interfaces . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 103 - 106 .

Peters MA, Botton GA, Humphreys CJ ( 1995 ) . The precipitation of beta' Ni2TiAl from Al-doped beta Ni-Ti alloys . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 451 - 454 .

Morgan CJ, Humphreys CJ ( 1995 ) . The proximity effect for electron beam lithography of aluminium oxide . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 575 - 578 .

Walther T, Schaublin RE, DuninBorkowski RE, Boothroyd CB, Humphreys CJ, Stobbs WM ( 1995 ) . The role of plasmon scattering in the quantitative contrast analysis of high-resolution lattice images of GaAs . ELECTRON MICROSCOPY AND ANALYSIS 1995 . vol. 147 , 195 - 198 .

Cherns D, Mylonas S, Chou CT, Wu J, Ashenford DE, Lunn B, Perovic DD, Humphreys CJ ( 1994 ) . Dislocation nucleation and propagation in semiconductor heterostructures . Scanning Microscopy . vol. 8 , 841 - 848 .

Cullen SL, Boothroyd CB, Humphreys CJ ( 1994 ) . Interpretation of the {100} fringes in lattice images from the centre of carbon nanotubes . Ultramicroscopy . vol. 56 , 127 - 134 .

Burgess WG, Preston AR, Botton GA, Zaluzec NJ, Humphreys CJ ( 1994 ) . Benefits of energy filtering for advanced convergent beam electron diffraction patterns . Ultramicroscopy vol. 55 , ( 3 ) 276 - 283 .

Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW, Humphreys CJ ( 1994 ) . Transmission electron microscopy investigations of II–VI/GaAs heterostructures . Journal of Crystal Growth vol. 138 , ( 1-4 ) 538 - 544 .

Wiezorek JMK, Preston AR, Court SA, Fraser HL, Humphreys CJ ( 1994 ) . Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 69 , ( 2 ) 285 - 299 .

CHEN GS, MORGAN CJ, HUMPHREYS CJ ( 1994 ) . A study of proximity effects in AlF3 electron beam resists . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 1305 - 1306 .

INKSON BJ, HUMPHREYS CJ ( 1994 ) . An HREM study of 1/6<112> intrinsic dipole formation in a Ti-Al alloy . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 83 - 84 .

BROWN PD, HUMPHREYS CJ ( 1994 ) . Defect anisotropy in (001) oriented sphalerite heteroepitaxial layers . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 149 - 150 .

BOTTON GA, HUMPHREYS CJ ( 1994 ) . EELS near edge structures in B2 intermetallics: A systematic series . ELECTRON MICROSCOPY 1994, VOL 1 . 631 - 632 .

ALLEN RM, CHEN GS, HUMPHREYS CJ ( 1994 ) . Electron beam damage in amorphous AlF3. A study of mass loss vs time . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 1307 - 1308 .

BOTTON GA, BURNELL G, HUMPHREYS CJ, YADAV T, WITHERS JC ( 1994 ) . From carbon socks to web-like wires: The microstructure of multi-metal filled carbon nanostructures by TEM and EELS . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 321 - 322 .

CULLEN SL, BOTTON G, HUMPHREYS CJ ( 1994 ) . Momentum transfer dependence of the low energy loss distribution of carbon nanotubes . ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B . 311 - 312 .

BURGESS W, SAUNDERS M, BIRD DM, PRESTON AR, ZALUZEC NJ, HUMPHREYS CJ ( 1994 ) . Structure factor determination in germanium by zone axis CBED . ELECTRON MICROSCOPY 1994, VOL 1 . 849 - 850 .

WALTHER T, BOOTHROYD CB, HUMPHREYS CJ, CULLIS AG ( 1994 ) . The effect of thin crystal strain relaxation on high-resolution images of Si/Si0.8Ge0.2 quantum wells . ELECTRON MICROSCOPY 1994, VOL 1 . 365 - 366 .

White RS, Humphreys C ( 1993 ) . Evolution and religion . Nature vol. 366 , ( 6453 ) 296 - 296 .

Boothroyd CB, Humphreys CJ ( 1993 ) . Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscope . Ultramicroscopy . vol. 52 , 318 - 324 .

INKSON BJ, BOOTHROYD CB, HUMPHREYS CJ ( 1993 ) . Boron segregation in a (Fe, V, B) TiAl based alloy . The European Physical Journal Special Topics . vol. 03 ,

Inkson BJ, Boothroyd CB, Humphreys CJ ( 1993 ) . Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium . Acta Metallurgica et Materialia vol. 41 , ( 10 ) 2867 - 2876 .

Chen GS, Boothroyd CB, Humphreys CJ ( 1993 ) . Novel fabrication method for nanometer-scale silicon dots and wires . Applied Physics Letters vol. 62 , ( 16 ) 1949 - 1951 .

ALLEN RM, LLOYD SJ, HUMPHREYS CJ ( 1993 ) . A STUDY OF SAMPLE THICKNESS DEPENDENCE IN ELECTRON-BEAM HOLE-DRILLING OF INORGANIC MATERIALS . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 87 - 90 .

SAUNDERS M, BIRD DM, ZALUZEC NJ, BURGESS WG, HUMPHREYS CJ ( 1993 ) . ACCURATE STRUCTURE FACTOR REFINEMENT FROM ZONE-AXIS CBED PATTERNS . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 125 - 128 .

MORGAN CJ, KIRKLAND AI, HUMPHREYS CJ ( 1993 ) . AN HREM INVESTIGATION OF THE DIAMOND HEXAGONAL PHASE IN A SILICON CONE FROM A VACUUM MICROELECTRONIC DEVICE . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 267 - 270 .

Inkson BJ, Boothroyd CB, Humphreys CJ ( 1993 ) . Boron segregation in a (Fe, V, B) TiAl based alloy . Journal De Physique . vol. 3 , 397 - 402 .

PRESTON AR, BURGESS WG, PICKUP CJ, HUMPHREYS CJ ( 1993 ) . DEBYE-WALLER FACTOR DETERMINATION FROM LACBED PATTERNS . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 145 - 148 .

WIEZOREK JMK, HUMPHREYS CJ ( 1993 ) . DETERMINATION OF STACKING-FAULT ENERGIES OF THE INTERMETALLIC TI-52AT-PERCENT AL . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 445 - 448 .

CHEN GS, BOOTHROYD CB, HUMPHREYS CJ ( 1993 ) . DIRECT ELECTRON-BEAM FABRICATION OF NANOMETER-SCALE SILICON COLUMNS . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 503 - 508 .

CHEN GS, BOOTHROYD CB, HUMPHREYS CJ ( 1993 ) . ELECTRON-INDUCED CRYSTALLIZATION IN ALUMINUM TRIFLUORIDE . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 369 - 372 .

HUMPHREYS CJ ( 1993 ) . ELECTRON-MICROSCOPE INVESTIGATIONS OF HETEROSTRUCTURES, NANOSTRUCTURES AND MISFIT DISLOCATIONS . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 441 - 448 .

BROWN PD, KIRKLAND A, HUMPHREYS CJ ( 1993 ) . HIGH-RESOLUTION PROFILE IMAGING OF (HG, MN)TE . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 209 - 212 .

CULLEN SL, BOTTON G, KIRKLAND AI, BROWN PD, HUMPHREYS CJ ( 1993 ) . INVESTIGATIONS OF STRUCTURE AND DEGRADATION OF CARBON NANOTUBES BY EELS AND HREM . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 79 - 82 .

BURGESS WG, SAUNDERS M, BIRD D, BOTTON G, PRESTON AR, HUMPHREYS CJ, ZALUZEC NJ ( 1993 ) . STRUCTURE FACTOR DETERMINATION BY ZONE-AXIS CBED . ELECTRON MICROSCOPY AND ANALYSIS 1993 . 137 - 140 .

BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, CANNARD PJ, DAVIES GJ ( 1993 ) . THE EFFECT OF GROWTH INTERRUPTS ON CBE GROWN INP . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 373 - 376 .

BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, PERRIN SD, DAVIES GJ ( 1993 ) . THE EFFECT OF THE IMAGING ELECTRON-BEAM ON INP/INGAAS MQW STRUCTURES . MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 . 493 - 496 .

Humphreys CJ, Waddington WG ( 1992 ) . The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion . Tyndale Bulletin vol. 43 , ( 2 )

MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S, HUMPHREYS C ( 1992 ) . ULTIMATE LIMITS OF LITHOGRAPHY . PHYSICS WORLD vol. 5 , ( 11 ) 28 - 32 .

Humphreys CJ, Bullough TJ, Devenish RW, Maher DM ( 1991 ) . 100 keV electron beam damage of metals, ceramics and semiconductors - implications for microanalysis and nanolithography . Institute of Physics Conference Series . vol. 119 , 319 - 324 .

Chen GS, Boothroyd CB, Humphreys CJ ( 1991 ) . Electron beam damage in AlF<inf>3</inf> . Institute of Physics Conference Series . vol. 119 , 325 - 328 .

Morgan CJ, Bailey SJ, Preston AR, Humphreys CJ ( 1991 ) . Electron beam nanolithography of sputtered amorphous Al<inf>2</inf>O<inf>3</inf> and the proximity effect . Institute of Physics Conference Series . vol. 119 , 503 - 506 .

Zhou X, Preston AR, Humphreys CJ ( 1991 ) . TEM study of nitrogen enhanced oxygen precipitation in nitrogen-doped Czochralski-grown silicon . Institute of Physics Conference Series . 211 - 216 .

HUMPHREYS C ( 1991 ) . State of British science . Nature vol. 351 , ( 6327 ) 513 - 513 .

Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP, Salisbury IG ( 1991 ) . The origin of dislocations in multilayers . Journal de Physique III vol. 1 , ( 6 ) 1119 - 1130 .

Humphreys C ( 1991 ) . 100 keV electron beam damage of metals and oxides . Micron vol. 22 , ( 1-2 ) 147 - 148 .

Humphreys CJ ( 1991 ) . Ceramic Superconductors . Concise Encyclopedia of Advanced Ceramic Materials , Elsevier

ZHOU X, PRESTON AR, HUMPHREYS CJ ( 1991 ) . TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON . MICROSCOPY OF SEMICONDUCTING MATERIALS 1991 . vol. 117 , 211 - 216 .

HUMPHREYS CJ ( 1991 ) . THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST . QUARTERLY JOURNAL OF THE ROYAL ASTRONOMICAL SOCIETY vol. 32 , ( 4 ) 389 - 407 .

HUMPHREYS C, WADDINGTON WG ( 1990 ) . Crucifixion date . Nature vol. 348 , ( 6303 ) 684 - 684 .

Turner PS, Bullough TJ, Devenish RW, Maher DM, Humphreys CJ ( 1990 ) . Nanometre hole formation in MgO using electron beams . Philosophical Magazine Letters vol. 61 , ( 4 ) 181 - 193 .

Humphreys C ( 1989 ) . Controlling crystal growth . Nature vol. 341 , ( 6244 ) 689 - 689 .

Devenish RW, Eaglesham DJ, Maher DM, Humphreys CJ ( 1989 ) . Nanolithography using field emission and conventional thermionic electron sources . Ultramicroscopy vol. 28 , ( 1-4 ) 324 - 329 .

Humphreys CJ ( 1989 ) . Radiation effects . Ultramicroscopy vol. 28 , ( 1-4 ) 357 - 358 .

Fraser HL, Maher DM, Knoell RV, Eaglesham DJ, Humphreys CJ, Bean JC ( 1989 ) . Compositional modulations in Ge x Si1− x heteroepitaxial layers . Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 7 , ( 2 ) 210 - 213 .

Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ, Bean JC ( 1989 ) . Tetragonal and monoclinic forms of Ge x Si1− x epitaxial layers . Applied Physics Letters vol. 54 , ( 3 ) 222 - 224 .

Eaglesham DJ, Maher DM, Kvam EP, Bean JC, Humphreys CJ ( 1989 ) . New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers . Physical Review Letters vol. 62 , ( 2 ) 187 - 190 .

Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL, Salisbury I ( 1989 ) . Strains and Misfit Dislocations at Interfaces . Evaluation of Advanced Semiconductor Materials by Electron Microscopy , vol. 203 , Springer Nature

Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA, Birchall JD ( 1988 ) . High temperature superconducting ceramics . Materials Science and Engineering B vol. 1 , ( 3-4 ) 229 - 235 .

Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK, Bean JC ( 1988 ) . X-ray topography of the coherency breakdown in Ge x Si1− x /Si(100) . Applied Physics Letters vol. 53 , ( 21 ) 2083 - 2085 .

Humphreys CJ, Maher DM, Fraser HL, Eaglesham DJ ( 1988 ) . Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals . The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics vol. 58 , ( 5 ) 787 - 798 .

Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ, Godfrey DJ ( 1988 ) . Plasma Anodisation of Silicon for Advanced VLSI . Journal de Physique Archives vol. 49 , ( C4 )

Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL ( 1988 ) . CBED and CBIM from semiconductors and superconductors . Ultramicroscopy vol. 26 , ( 1-2 ) 13 - 23 .

Huxford NP, Eaglesham DJ, Humphreys CJ ( 1988 ) . Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors . Nature vol. 331 , ( 6153 ) 286 - 286 .

Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ, Godfrey DJ ( 1988 ) . Plasma anodisation of silicon for advanced VLSI . European Solid-State Device Research Conference . C4393 - C4396 .

Huxford NP, Eaglesham DJ, Humphreys CJ ( 1987 ) . Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors . Nature vol. 329 , ( 6142 ) 812 - 813 .

Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA, Birchall JD ( 1987 ) . New phases in the superconducting Y:Ba:Cu:O system . Applied Physics Letters vol. 51 , ( 6 ) 457 - 459 .

Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NM, Birchall JD ( 1987 ) . THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y 1 Ba 2 Cu 3 O 9-y . Advanced Ceramic Materials vol. 2 , ( 3B ) 662 - 667 .

Waddington W, Rez P, Grant I, Humphreys C ( 1987 ) . Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals [Phys. Rev. B 34, 1467 (1986)] . Physical Review B vol. 35 , ( 10 ) 5297 - 5297 .

Maher DM, Fraser HL, Humphreys CJ, Knoell RV, Bean JC ( 1987 ) . Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction . Applied Physics Letters vol. 50 , ( 10 ) 574 - 576 .

Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G, Marchionna M ( 1987 ) . Analytical electron microscopy of [Ni 38 Pt 6 (CO) 48 H] 5– . Chemical Communications vol. 0 , ( 10 ) 765 - 766 .

Humphreys CJ ( 1987 ) . High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures . Thin Film Growth Techniques for Low-Dimensional Structures , vol. 163 , Springer Nature

Bullock JF, Titchmarsh JM, Humphreys CJ ( 1986 ) . STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES . Semiconductor Science and Technology vol. 1 , ( 6 ) 342 - 345 .

Waddington WG, Rez P, Grant IP, Humphreys CJ ( 1986 ) . White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals . Physical Review B vol. 34 , ( 3 ) 1467 - 1473 .

Bullock JF, Humphreys CJ, Mace AJW, Bishop HE, Titchmarsh JM ( 1985 ) . CRYSTALLINE EFFECTS IN THE ANALYSIS OF SEMICONDUCTOR MATERIALS USING AUGER ELECTRONS OR X-RAYS . Institute of Physics Conference Series . 405 - 410 .

Fraser HL, Maher DM, Humphreys CJ, Hetherington CJD, Knoell RV, Bean JC ( 1985 ) . DETECTION OF LOCAL STRAINS IN STRAINED LAYER SUPERLATTICES . Institute of Physics Conference Series . 307 - 312 .

Davies RA, Kelly MJ, Kerr TM, Hetherington CJD, Humphreys CJ ( 1985 ) . Geometric and electronic structure of a semiconductor superlattice . Nature vol. 317 , ( 6036 ) 418 - 419 .

Humphreys CJ ( 1985 ) . Surface physics: Hopping atoms in crystal growth . Nature vol. 317 , ( 6032 ) 16 - 16 .

Timsit RS, Waddington WG, Humphreys CJ, Hutchison JL ( 1985 ) . Structure of the Al/Al2O3 interface . Applied Physics Letters vol. 46 , ( 9 ) 830 - 832 .

Timsit RS, Waddington WG, Humphreys CJ, Hutchison JL ( 1985 ) . Examination of the Al/Al2O3 interface by high-resolution electron microscopy . Ultramicroscopy vol. 18 , ( 1-4 ) 387 - 394 .

Salisbury IG, Timsit RS, Berger SD, Humphreys CJ ( 1984 ) . Nanometer scale electron beam lithography in inorganic materials . Applied Physics Letters vol. 45 , ( 12 ) 1289 - 1291 .

Humphreys CJ ( 1984 ) . MICRO-84: Electron microscopy 50 years on . Nature vol. 311 , ( 5981 ) 12 - 12 .

Humphreys CJ ( 1984 ) . Crytallography: Defects in reduced oxides . Nature vol. 309 , ( 5966 ) 310 - 310 .

Spence JCH, Humphreys CJ ( 1984 ) . CHANNELLING RADIATION IN ELECTRON MICROSCOPY . Optik (Jena) vol. 66 , ( 3 ) 225 - 242 .

Hetherington CJD, Cherns D, Humphreys CJ ( 1983 ) . ATOMIC STRUCTURE OF THE NiSi//2/(001) Si INTERFACE . Institute of Physics Conference Series . 89 - 94 .

Humphreys CJ, Waddington WG ( 1983 ) . Dating the Crucifixion . Nature vol. 306 , ( 5945 ) 743 - 746 .

Humphreys CJ ( 1983 ) . HIGH VOLTAGE ELECTRON MICROSCOPY - PRESENT ACHIEVEMENTS AND FUTURE PROSPECTS . Lawrence Berkeley Laboratory (Report) LBL . 1 - 4 .

Hull R, Petford AK, Humphreys CJ, Smith DJ ( 1983 ) . High resolution electron microscopy of silver β- and β″ -aluminas . Solid State Ionics vol. 9 , 181 - 186 .

Mochel ME, Humphreys CJ, Eades JA, Mochel JM, Petford AM ( 1983 ) . Electron beam writing on a 20-Å scale in metal β-aluminas . Applied Physics Letters vol. 42 , ( 4 ) 392 - 394 .

Humphreys CJ ( 1981 ) . Fundamental concepts of stem imaging . Ultramicroscopy vol. 7 , ( 1 ) 7 - 12 .

Humphreys CJ, Spence JCH ( 1981 ) . RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY . Optik (Jena) vol. 58 , ( 2 ) 125 - 142 .

Sellar JR, Imeson D, Humphreys CJ ( 1980 ) . The combined convergent beam/critical voltage technique in high voltage electron microscopy . Micron (1969) vol. 11 , ( 3-4 ) 241 - 242 .

Humphreys CJ, Drummond RA, Hart-davis A, Butler EP ( 1977 ) . Additional image peaks in the high resolution imaging of dislocations . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 35 , ( 6 ) 1543 - 1555 .

Humphreys CJ, Drummond RA ( 1977 ) . HIGH RESOLUTION IMAGING OF DEFECTS . Inst Phys Conf Ser . 241 - 246 .

Rez P, Humphreys CJ, Whelan MJ ( 1977 ) . The distribution of intensity in electron diffraction patterns due to phonon scattering . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 35 , ( 1 ) 81 - 96 .

Rez P, Humphreys CJ, Whelan MJ ( 1976 ) . DISTRIBUTION OF PHONON SCATTERED ELECTRONS IN HIGH ENERGY ELECTRON DIFFRACTION PATTERNS . 373 - 376 .

Humphreys CJ, Hart-Davis A ( 1976 ) . SPURIOUS PEAKS IN WEAK-BEAM IMAGES . 409 - 412 .

Sandström R, Spencer JF, Humphreys CJ ( 1974 ) . A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy . Journal of Physics D vol. 7 , ( 7 )

Spencer JP, Booker GR, Humphreys CJ, Joy DC ( 1974 ) . ELECTRON CHANNELLING PATTERNS FROM DEFORMED CRYSTALS . 919 - 925 .

Humphreys CJ ( 1974 ) . Recent applications of high voltage electron microscopy in various branches of science . Microscope vol. 22 , ( 2 ) 129 - 140 .

Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R et al. ( 1973 ) . SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972 .

Humphreys CJ ( 1972 ) . The optimum voltage in very high voltage electron microscopy . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 25 , ( 6 ) 1459 - 1472 .

Lally JS, Humphreys CJ, Metherell AJF, Fisher RM ( 1972 ) . The critical voltage effect in high voltage electron microscopy . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 25 , ( 2 ) 321 - 343 .

Humphreys CJ, Thomas LE, Lally JS, Fisher RM ( 1971 ) . Maximizing the penetration in high voltage electron microscopy . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 23 , ( 181 ) 87 - 114 .

Humphreys CJ, Lally JS ( 1970 ) . Aspects of Bloch-Wave Channeling in High-Voltage Electron Microscopy . Journal of Applied Physics vol. 41 , ( 1 ) 232 - 235 .

Thomas LE, Humphreys CJ, Duff WR, Grubb DT ( 1970 ) . Radiation damage of polymers in the million volt electron microscope . Radiation Effects and Defects in Solids vol. 3 , ( 1 ) 89 - 91 .

Humphreys CJ, Whelan MJ ( 1969 ) . Inelastic scattering of fast electrons by crystals . The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 20 , ( 163 ) 165 - 172 .